Imaging systems with image pixels having adjustable responsivity
View Patent ↗An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with responsivity adjustment structures. For example, broadband pixels in a pixel array may include responsivity adjustment circuitry. The responsivity adjustment circuitry may be configured to narrow the spectral response or to reduce the conversion gain of the broadband pixels in high light conditions. For example, a deep photodiode may divert charge away from a signal photodiode during an integration period. The deep photodiode may divert charge to a power supply or the charge may be transferred to a storage node and used in image processing, if desired. The responsivity adjustment circuitry may include channel-dependent conversion circuitry that is formed in pixels corresponding to a first color channel, while the conversion gains of pixels corresponding to a second color channel may remain fixed.
1. An image sensor, comprising:
a substrate;
an image pixel array formed in the substrate, wherein the image pixel array includes first and second groups of image pixels and wherein each image pixel in the first and second groups of image pixels comprises a signal photodiode; and
spectral response adjustment circuitry in each image pixel in the first group of image pixels, wherein the spectral response adjustment circuitry comprises a responsivity adjustment photodiode that is configured to divert charge from the signal photodiode,
wherein the first group of image pixels comprises broadband image pixels having broadband color filter elements, wherein the second group of image pixels comprises red and blue image pixels having red and blue color filter elements, and
wherein the responsivity adjustment photodiode is surrounded on three sides by the signal photodiode in the substrate.
2. The image sensor defined in claim 1 wherein the substrate has a surface through which light enters, wherein the signal photodiode is located a first distance from the surface, wherein the responsivity adjustment photodiode is located a second distance from the surface, and wherein the first distance is less than the second distance.
3. The image sensor defined in claim 2 , further comprising:
a transistor that is electrically coupled between the signal photodiode and the responsivity adjustment photodiode.
4. The image sensor defined in claim 3 , wherein the signal photodiode and the responsivity adjustment photodiode comprise a first doping type, and wherein the signal photodiode is separated from the responsivity adjustment photodiode by a semiconductor region having a second doping type that is different than the first doping type.
5. The image sensor defined in claim 4 , wherein the first doping type is n-type and the second doping type is p-type.
6. The image sensor defined in claim 1 wherein the broadband color filter elements are each configured to pass at least two colors of light selected from the group consisting of: red light, green light, and blue light.
7. The image sensor defined in claim 1 , wherein the broadband color filter elements are each configured to pass red light, green light, and blue light.
8. The image sensor defined in claim 1 , wherein the broadband color filter elements are each configured to pass red light and green light.
9. The image sensor defined in claim 1 , further comprising:
a transistor that is electrically coupled between the signal photodiode and the responsivity adjustment photodiode.
10. An image sensor, comprising:
a substrate;
an image pixel array formed in the substrate, wherein the image pixel array includes first and second groups of image pixels and wherein each image pixel in the first and second groups of image pixels comprises a signal photodiode;
spectral response adjustment circuitry in each image pixel in the first group of image pixels, wherein the spectral response adjustment circuitry comprises a responsivity adjustment photodiode that is stacked with the signal photodiode and that is configured to divert charge from the signal photodiode; and
a transistor electrically coupled between the signal photodiode and the responsivity adjustment photodiode that is configured to electrically connect and disconnect the signal photodiode and the responsivity adjustment photodiode.
11. The image sensor defined in claim 10 wherein the substrate has a surface through which light enters, wherein the signal photodiode is located a first distance from the surface, wherein the responsivity adjustment photodiode is located a second distance from the surface, and wherein the first distance is less than the second distance.
12. The image sensor defined in claim 11 wherein the signal photodiode and the responsivity adjustment photodiode are configured to collect charge separately when the transistor disconnects the responsivity adjustment photodiode from the signal photodiode.
13. The image sensor defined in claim 12 wherein each image pixel in the first group of image pixels further comprises a transfer gate and a floating diffusion node, wherein the charge collected by the responsivity adjustment photodiode is transferred to the floating diffusion node by pulsing the transfer gate while the transistor is enabled.
14. The image sensor defined in claim 10 wherein the first group of image pixels comprises broadband image pixels having broadband color filter elements and wherein the second group of image pixels comprises red and blue image pixels having red and blue color filter elements.