Granted Patent B2

US 9,257,403 · App. 14/090,086 · Granted Feb 9, 2016

Abstract

Claims (26)

1. An integrated circuit copper wire bond connection comprising:

a copper ball bonded to an aluminum bond pad formed on a low-k dielectric layer to form a bond interface structure for the copper ball characterized by a first plurality of geometric features comprising substantially symmetrical minima features located on opposed outer peripheral locations under the copper ball to provide a ball shear strength per area measure of at least 7.5 gf/mil 2 .

2. The integrated circuit copper wire bond connection of claim 1 , where the aluminum bond pad is formed with a metallic material having a modulus measure of stiffness that is less than or equal to a 60% of a modulus measure of a metallic material used to form the copper ball.

3. The integrated circuit copper wire bond connection of claim 1 , where each minima feature of the bond interface structure has a thickness that is less than 0.2 microns.

4. The integrated circuit copper wire bond connection of claim 1 , where each minima feature of the bond interface structure has a thickness that is less than 0.1 microns.

5. The integrated circuit copper wire bond connection of claim 1 , where each minima feature of the bond interface structure is located in or past an outer half of a chamfer-squeezed region in the copper ball at a high stress connection point between the copper ball and aluminum bond pad.

6. The integrated circuit copper wire bond connection of claim 1 , where each minima feature of the bond interface structure comprises an aluminum minima feature or an intermetallic compound layer minima feature.

7. The integrated circuit copper wire bond connection of claim 1 , where the substantially symmetrical minima features comprise a first minima feature having a first larger thickness on a first side of the copper ball and a second minima feature having a smaller thickness on a second, opposite side of the copper ball, where second smaller thickness is at least 70% of the first larger thickness.

8. The integrated circuit copper wire bond connection of claim 1 , where the first plurality of geometric features for the bond interface structure comprises an inter-metallic compound (IMC) layer having a total length that is at least 65% of a diameter measure for the copper ball.

9. The integrated circuit copper wire bond connection of claim 1 , where the first plurality of geometric features for the bond interface structure comprises an inter-metallic compound (IMC) layer having a total length that is at least 80% of a diameter measure for the copper ball.

10. The integrated circuit copper wire bond connection of claim 1 , where the copper ball has a height dimension that is less than 35% of a diameter measure for the copper ball.

11. The integrated circuit copper wire bond connection of claim 1 , where the copper ball has a diameter of substantially 55 microns or less, and is integrally attached to a wire conductor having a diameter of substantially 25 microns or less.

12. The integrated circuit copper wire bond connection of claim 1 , where the integrated circuit copper wire bond connection is characterized by a ball shear strength per area measure of at least 9 gf/mil 2 .

13. The integrated circuit copper wire bond connection of claim 1 , where the copper ball is attached to the aluminum bond pad by applying ultrasonic vibration energy to the copper ball in a first direction.

14. The integrated circuit copper wire bond connection of claim 1 , where one or more active circuits are located directly underneath the integrated circuit copper wire bond connection.

15. A method of forming a copper ball bond to an aluminum pad, comprising:

forming a bonding wire comprising a copper ball;

positioning the copper ball at a bonding site at an aluminum bond pad formed on a low-k dielectric layer;

bonding the copper ball to an aluminum bond pad with a predetermined combination of heat, pressure and ultrasonic vibration energy applied in a first direction to form a bond interface structure between the copper ball and aluminum bond pad characterized by a first plurality of geometric features comprising an substantially symmetrical minima features located on opposed an outer peripheral locations under the copper ball to provide a ball shear strength per area measure of at least 7.5 gf/mil 2 .

16. The method of claim 15 , where bonding the copper ball to the aluminum bond pad with the predetermined combination of heat, pressure and ultrasonic vibration energy is performed in wire bonder process comprising:

preheating the bonding wire an copper ball to a predetermined preheat temperature; and

heating the copper ball and aluminum bond pad to a bonding temperature above the predetermined preheat temperature when bonding the copper ball to the aluminum bond pad while supplying bonding power current of approximately 40-50 mA and applying a first bonding force of approximately 15-25 g during the first segment and supplying bonding power current of approximately 65-75 mA and applying a second bonding force that is larger than the first bonding force during the second segment for a bonding time of approximately 10-20 msec.

17. The method of claim 15 , where each minima feature of the bond interface structure has a thickness that is less than 0.2 microns.

18. The method of claim 15 , where each minima feature of the bond interface structure comprises an aluminum minima feature or an intermetallic compound layer minima feature.

19. The method of claim 15 , where the first plurality of geometric features for the bond interface structure comprises an inter-metallic compound (IMC) layer having a total length that is at least 65% of a diameter measure for the copper ball.

20. The method of claim 15 , where the copper ball bond to the aluminum pad is characterized by a ball shear strength per area measure of at least 9 gf/mil 2 .

Assignments (32)