Method of manufacturing semiconductor device including thermal compression
A method of manufacturing a semiconductor device includes attaching a curable film to a first connection member including a first circuit terminal, attaching a conductive film to a second connection member including a second circuit terminal, and thermally compressing the first connection member to the second connection member, with the first connection member and the second connection member placed such that the curable film and the conductive film face each other.
1. A method of manufacturing a semiconductor device, the method comprising:
attaching a curable film to a first connection member including a first circuit terminal;
attaching a conductive film to a second connection member including a second circuit terminal; and
thermally compressing the first connection member to the second connection member, with the first connection member having the curable film attached thereto and the second connection member having the conductive film attached thereto placed such that the curable film and the conductive film face each other,
wherein the curable film includes a thermal initiator and a binder.
2. The method as claimed in claim 1 , wherein the first circuit terminal and the second circuit terminal are connected to each other when the first connection member having the curable film attached thereto and the second connection member having the conductive film attached thereto are subjected to thermal compression.
3. The method as claimed in claim 1 , wherein the first connection member is a chip on film (COF), a flexible printed circuit board (FPCB), or a semiconductor chip, and the second connection member is a glass panel or a printed circuit board (PCB).
4. A method of manufacturing a semiconductor device, the method comprising:
attaching a curable film to a first connection member including a first circuit terminal;
attaching a conductive film to a second connection member including a second circuit terminal; and
thermally compressing the first connection member to the second connection member, with the first connection member having the curable film attached thereto and the second connection member having the conductive film attached thereto placed such that the curable film and the conductive film face each other,
wherein the conductive film includes a binder, curing materials, and conductive particles, and is free from a thermal initiator.
5. The method as claimed in claim 4 , wherein the curable film includes a thermal initiator and a binder.
6. A method of manufacturing a semiconductor device, the method comprising:
attaching a curable film to a first connection member including a first circuit terminal;
attaching a conductive film to a second connection member including a second circuit terminal; and
thermally compressing the first connection member to the second connection member, with the first connection member having the curable film attached thereto and the second connection member having the conductive film attached thereto placed such that the curable film and the conductive film face each other,
wherein the curable film or the conductive film has corrugations formed therein.
7. The method as claimed in claim 6 , wherein the corrugations have prism shapes.
8. A method of manufacturing a semiconductor device, the method comprising:
attaching a curable film to a first connection member including a first circuit terminal;
attaching a conductive film to a second connection member including a second circuit terminal; and
thermally compressing the first connection member to the second connection member, with the first connection member having the curable film attached thereto and the second connection member having the conductive film attached thereto placed such that the curable film and the conductive film face each other,
wherein the curable film has a difference of 40 J/g or less between heating values after storage for 24 hours at 40° C. and after storage for 72 hours at 40° C., and the conductive film has a difference of 40 J/g or less between heating values after storage for 24 hours at 40° C. and after storage for 72 hours at 40° C.