Method for forming copper wiring
There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.
1. A Cu wiring forming method for forming a Cu wiring by filling Cu in a recess formed in a predetermined pattern in a Si-containing interlayer insulating film, of a substrate, the Cu wiring forming method comprising:
forming an NH group only on a surface of the Si-containing interlayer insulating film such that the surface of the Si-containing interlayer insulating film becomes hydrophilic;
forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition;
forming a Cu film by physical vapor deposition to fill the recess with the Cu film; and
forming a Cu wiring in the recess by polishing the entire surface of the substrate by chemical mechanical polishing,
wherein the Cu wiring forming method further comprises, between said forming the NH group and said forming the Mn film, forming an OH group or a H group on the surface of the Si-containing interlayer insulating film.
2. The Cu wiring forming method of claim 1 , further comprising, forming a Ru film between said forming the Mn film and said forming the Cu film.
3. The Cu wiring forming method of claim 2 , wherein the Ru film is formed by chemical vapor deposition.
4. The Cu wiring forming method of claim 1 , wherein said forming the Cu film is carried out by an apparatus configured to produce a plasma from a plasma generating gas in a processing chamber where the substrate is accommodated, scatter particles from a Cu target, ionize particles in the plasma, and attract ions onto the substrate by applying a bias power to the substrate.
5. The Cu wiring forming method of claim 1 , wherein said forming the NH group is carried out by performing N 2 plasma treatment.