Capacitive cell load estimation using electromigration analysis
View Patent ↗A method of estimating capacitive cell load of cells in an integrated circuit (IC) design uses first maximum capacitive load values C MAX — LIB in calculating risk of electromigration failure in cells of the IC design. C MAX — LIB is saved for a cell whose risk of electromigration failure is acceptable. For a failed cell, a revised maximum capacitive load value C MAX — 2 is reduced as the ratio of an actual current I ACTUAL — 1 relative to the electromigration current limit I LIMIT in the weakest element of the cell. A revised actual current I ACTUAL — 2 is obtained as a function of transition times with C MAX — 2 . C MAX — 2 is saved for the cell if I ACTUAL — 2 is less than I LIMIT . Otherwise the steps of calculating C MAX — 2 and I ACTUAL — 2 are re-iterated. C MAX — 2 is reduced relative to C MAX — LIB for the first iteration and is further reduced relative to its previous value C MAX — 2 for subsequent iterations.
1. A method of estimating capacitive cell load in an integrated circuit design using an electronic design automation (EDA) tool, wherein the EDA tool includes a processor and a memory coupled to the processor, wherein the integrated circuit design is stored in the memory, comprising:
a) using first maximum capacitive load values stored in the memory to calculate, using the processor, a risk of electromigration failure in cells of the integrated circuit design, and saving the first maximum capacitive load values for cells whose risk of electromigration failure is acceptable;
b) for a failed cell from step a), calculating, using the processor, a revised maximum capacitive load value that is equal to the first maximum capacitive load value reduced as a function of an actual current relative to an electromigration current limit in a weakest element that has the smallest electromigration current limit in the electromigration calculation of step a) for the failed cell;
c) calculating, using the processor, a revised actual current in the weakest element as a function of transition times with the revised maximum capacitive load value for the failed cell; and
d) saving the revised maximum capacitive load value for the failed cell if the revised actual current is less than the electromigration current limit of the weakest element, or otherwise re-iterating steps b) to d);
wherein the revised maximum capacitive load value of step b) is reduced relative to the first value of step a) for the first performance of step b) for a cell, and is further reduced relative to the previous revised maximum capacitive load value of step d) for a subsequent iteration of steps b) to d) for the failed cell.
2. The method of claim 1 , wherein the risk of electromigration failure is verified with the saved values of maximum capacitive loads of the cells after steps a) to d) are completed.
3. The method of claim 2 , wherein if the verified risk of electromigration failure is unacceptable for at least one cell, the integrated circuit design is modified, the modified design is stored in the memory, and steps a) to d) are re-iterated.
4. The method of claim 1 , wherein the revised maximum capacitive load for the failed cell in step b) is reduced in proportion to the ratio of actual current and electromigration current limit of its weakest element.
5. The method of claim 1 , wherein the transition times used in step c) in obtaining the revised actual current are maximum transition times obtained from a library file, stored in the memory, with the revised maximum capacitive load.
6. The method of claim 1 , wherein the values of actual currents and electromigration current limits include peak current values.
7. The method of claim 1 , wherein the values of actual currents and electromigration current limits include root mean square (rms) current values.
8. The method of claim 1 , wherein the values of actual currents and electromigration current limits include average current values.
9. A non-transitory computer-readable storage medium storing instructions for execution by an electronic design automation (EDA) tool including a processor and a memory coupled to the processor, wherein the integrated circuit design is stored in the memory, and, when executed by the EDA tool, cause the computer to perform a method of estimating capacitive cell load in an integrated circuit design stored in the memory, the method comprising:
a) using first maximum capacitive load values stored in the memory in calculating, using the processor, risk of electromigration failure in cells of the integrated circuit design, and saving the first maximum capacitive load values for cells whose risk of electromigration failure is acceptable;
b) for a failed cell from step a), calculating, using the processor, a revised maximum capacitive load value that is equal to the first maximum capacitive load value reduced as a function of an actual current relative to an electromigration current limit in a weakest element that has the smallest electromigration current limit in the electromigration calculation of step a) for the failed cell;
c) calculating, using the processor, a revised actual current in the weakest element as a function of transition times with the revised maximum capacitive load value for the failed cell; and
d) saving the revised maximum capacitive load value for the failed cell if the revised actual current is less than the electromigration current limit of the weakest element, or otherwise re-iterating steps b) to d);
wherein the revised maximum capacitive load value of step b) is reduced relative to the first value of step a) for the first performance of step b) for a cell, and is further reduced relative to the previous revised maximum capacitive load value of step d) for a subsequent iteration of steps b) to d) for the failed cell.
10. The non-transitory computer-readable storage medium of claim 9 , wherein the risk of electromigration failure is verified with the saved values of maximum capacitive loads of the cells after steps a) to d) are completed.
11. The non-transitory computer-readable storage medium of claim 9 , wherein the revised maximum capacitive load for the failed cell in step b) is reduced in proportion to the ratio of actual current and electromigration current limit of its weakest element.
12. The non-transitory computer-readable storage medium of claim 9 , wherein the transition times used in step c) in obtaining the revised actual current are maximum transition times obtained from a library file with the revised maximum capacitive load for the failed cell.
13. The non-transitory computer-readable storage medium of claim 9 , wherein the values of actual currents and electromigration current limits include peak current values.
14. The non-transitory computer-readable storage medium of claim 9 , wherein the values of actual currents and electromigration current limits include root mean square (rms) current values.
15. The non-transitory computer-readable storage medium of claim 9 , wherein the values of actual currents and electromigration current limits include average current values.