Integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion
View Patent ↗An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.
1. An integrated circuit device comprising:
a device package having a cavity in an upper surface thereof;
a substantially planar first shield member overlying said device package within said cavity;
an integrated circuit die overlying said first shield;
a substantially planar second shield member overlying said integrated circuit die;
a lid overlying said second shield member and displaced therefrom, said lid being attached to said device package laterally of said cavity; and
a first bondline for directly coupling said device package to said first shield member.
2. The integrated circuit device of claim 1 wherein said device package comprises a ceramic.
3. The integrated circuit device of claim 1 wherein the first bondline comprises a relatively thin bondline of substantially 2.0 mils interposed between said device package and said first shield member.
4. The integrated circuit device of claim 3 wherein said first bondline comprises a low outaassing epoxy die attach material.
5. The integrated circuit device of claim 1 wherein said first shield member comprises a high permeability, high saturation ferromagnetic material having a low coefficient of thermal expansion.
6. The integrated circuit device of claim 5 wherein said ferroelectric material comprises Invar.
7. The integrated circuit device of claim 1 further comprising a second bondline comprising a relatively thin bondline of substantially 2.0 mils interposed between said first shield member and said integrated circuit die.
8. The integrated circuit device of claim 7 wherein said second bondline comprises a low outgassing epoxy die attach material.
9. The integrated circuit device of claim 1 wherein said integrated circuit die comprises an MRAM device.
10. The integrated circuit device of claim 1 further comprising a third bondline comprising a relatively thick bondline of substantially 10.0 mils interposed between said integrated circuit die and said second shield member.
11. The integrated circuit device of claim 10 wherein said second shield member is attached to said device package laterally of said cavity and medially of said lid.
12. The integrated circuit device of claim 10 further comprising wirebond extending from said integrated circuit device and through said third bondline.
13. The integrated circuit device of claim 10 wherein said third bondline comprises a low outgassing epoxy die attach material.
14. The integrated circuit device of claim 1 wherein said lid comprises a controlled expansion nickel-cobalt ferrous alloy.
15. The integrated circuit device of claim 14 wherein said alloy comprises Kovar®.
16. The integrated circuit device of claim 1 wherein said first and second shield members are substantially the same size.
17. The integrated circuit device of claim 16 wherein said first and second shield members are substantially the same size as said integrated circuit die.
18. The integrated circuit device of claim 16 wherein said first and second shield members are larger than said integrated circuit die.
19. The integrated circuit device of claim 1 wherein said second shield member is attached to said device package laterally of said cavity and medially of said lid.
20. The integrated circuit device of claim 1 further comprising wirebonds extending from said integrated circuit die.
21. The integrated circuit device of claim 1 wherein said second shield member is larger than said first shield member.