Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
Provided is a method including forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen, and supplying a reactive gas to the substrate wherein the reactive gas contains the at least one element selected from the group consisting of nitrogen, carbon and boron.
1. A method of manufacturing a semiconductor device, comprising forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including alternatively performing:
(a) supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen; and
(b) supplying a reactive gas to the substrate wherein the reactive gas contains the at least one element selected from the group consisting of nitrogen, carbon and boron,
wherein a temperature of the substrate ranges from 700° C. to 900° C. when forming the film.
2. The method according to claim 1 , wherein the cycle is performed a predetermined number of times under condition where at least a portion of the chemical bond of the predetermined element and oxygen in the source gas is maintained.
3. The method according to claim 1 , wherein the step (a) is performed under condition where at least a portion of the chemical bond of the predetermined element and oxygen in the source gas is maintained.
4. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate under condition where at least a portion of the chemical bond of the predetermined element and oxygen in the source gas is maintained, and
the step (b) comprises modifying the layer including the predetermined element and oxygen under condition where at least a portion of the chemical bond of the predetermined element and oxygen included in the layer including the predetermined element and oxygen is maintained.
5. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate under condition where at least a portion of the chemical bond of the predetermined element and oxygen in the source gas is maintained, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into the layer including the predetermined element, oxygen and the at least one element selected from a group consisting of nitrogen, carbon and boron under condition where at least a portion of the chemical bond of the predetermined element and oxygen included in the layer including the predetermined element and oxygen is maintained.
6. The method according to claim 1 , wherein the source gas comprises a siloxane.
7. The method according to claim 1 , wherein the source gas comprises at least one selected from a group consisting of hexachlorodisiloxane, tetrachloroclisiloxane, pentachloroclisiloxane, octachlorotrisiloxane, decachlorotetrasiloxane and dodecachloropentasiloxane.
8. The method according to claim 1 , wherein the reactive gas comprises at least one selected from the group consisting of a nitrogen-containing gas, a carbon-containing gas, a gas containing nitrogen and carbon, a boron-containing gas, and a gas containing boron, nitrogen and carbon.
9. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, oxygen and nitrogen by supplying a nitrogen-containing gas as the reactive gas.
10. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, oxygen and carbon by supplying a carbon-containing gas as the reactive gas.
11. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, oxygen, carbon and nitrogen by supplying a carbon-containing gas and a nitrogen-containing gas as the reactive gas.
12. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, oxygen, carbon and nitrogen by supplying a gas containing nitrogen and carbon as the reactive gas.
13. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, boron and oxygen by supplying a boron-containing gas as the reactive gas.
14. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, boron, oxygen and nitrogen by supplying a boron-containing gas and a nitrogen-containing gas as the reactive gas.
15. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, boron, oxygen, carbon and nitrogen by supplying a boron-containing gas, a carbon-containing gas and a nitrogen-containing gas as the reactive gas.
16. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, the boron, oxygen, carbon and nitrogen by supplying a gas containing boron, nitrogen and carbon as the reactive gas.
17. The method according to claim 1 , wherein the step (a) comprises forming a layer including the predetermined element and oxygen on the substrate, and
the step (b) comprises modifying the layer including the predetermined element and oxygen into a layer including the predetermined element, boron, oxygen, carbon and nitrogen by supplying a gas containing boron, nitrogen and carbon and a nitrogen-containing gas as the reactive gas.
18. The method according to claim 1 , wherein the reactive gas includes at least one selected from a group consisting of an ethylamine-based gas, a methylamine-based gas, a propylamine-based gas, an isopropylamine-based gas, a butylamine-based gas and an isobutylamine-based gas.
19. The method according to claim 1 , wherein the reactive gas includes an organic hydrazine-based gas.
20. A method of manufacturing a semiconductor device, comprising forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including alternately performing:
(a) supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen; and
(b) supplying a reactive gas to the substrate wherein the reactive gas includes at least one selected from a group consisting of an ethylamine-based gas, a methylamine-based gas, a propylamine-based gas, an isopropylamine-based gas, a butylamine-based gas, and an isobutylamine-based gas.
21. A method of manufacturing a semiconductor device, comprising forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including alternately performing:
(a) supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen; and
(b) supplying a reactive gas to the substrate wherein the reactive gas includes an organic hydrazine-based gas.