IP Library Granted Patent US 8,969,138
Granted Patent B2
US 8,969,138 · App. 14/108,507 · Granted Mar 3, 2015

Semiconductor device and a method of manufacturing the same and a mounting structure of a semiconductor device

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Quick Facts
Patent No.
US 8,969,138
App. No.
14/108,507
Granted
Mar 3, 2015
Kind
B2
Abstract

The semiconductor device includes a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface; a plurality of suspension leads supporting the tab; a plurality of leads arranged between the suspension leads; a semiconductor chip mounted on the chip supporting surface of the tab, the semiconductor chip including a main surface, a plurality of pads formed on the main surface, and a rear surface opposite to the main surface; a seal portion sealing the semiconductor chip such that a part of each of the leads is exposed from the seal portion; and a Pb-free solder formed on the part of each of the leads. A part of the rear surface of the semiconductor chip is contacted with the seal portion.

Claims (31)

1. A method of manufacturing semiconductor device, comprising the steps of:

(a) providing a lead frame including a frame portion, a tab arranged inside of the frame portion, and a lead connected with the frame portion;

(b) after step (a), mounting a semiconductor chip over the tab, the semiconductor chip including a main surface and a pad formed on the main surface;

(c) after step (b), electrically connecting the pad with the lead via a wire;

(d) after step (c), sealing the semiconductor chip and the wire with resin such that a part of the lead is exposed from the resin; and

(e) after step (d), dividing the lead from the frame portion, the lead having a surface with which a part of the wire is connected,

wherein in step (a), a first groove and a second groove are both formed on the surface of the lead,

wherein in the surface of the lead, the first groove is located closer to the tab than the second groove,

wherein a size of the first groove is smaller than that of the second groove, and

wherein in the step (c), the part of the wire is connected to an area located between the first groove and the second groove.

2. The method according to claim 1 , wherein in step (e), the lead is divided from the frame portion by pressing a part of the frame portion with a punch.

3. The method according to claim 1 , wherein the lead is extended in a first direction in a plan view, and

wherein a width in a second direction perpendicular to the first direction of the first groove is smaller than a width in the second direction of the second groove.

4. The method according to claim 1 , wherein in step (a), a plating layer is formed on the area of the surface of the lead, and

wherein in step (c), the part of the wire is connected with the area via the plating layer.

5. The method according to claim 1 ,

wherein a depth of the second groove is deeper than a depth of the first groove.

6. The method according to claim 1 ,

wherein the first and second grooves are shaped as first and second recesses, respectively.

7. The method according to claim 6 ,

wherein the first recess has a circular shape on the surface of the lead.

8. The method according to claim 6 ,

wherein the second recess has an oblong shape on the surface of the lead.

9. The method according to claim 6 ,

wherein the first and second recesses do not reach any edge of the surface of the lead.

10. The method according to claim 9 ,

wherein the first recess has a circular shape on the surface of the lead.

11. The method according to claim 10 ,

wherein the second recess has an oblong shape on the surface of the lead.

12. The method according to claim 9 ,

wherein the second recess has an oblong shape on the surface of the lead.

Assignments (6)
ABSORPTION-TYPE MERGER Recorded Dec 5, 2019
From: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 051201/0001 →
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
MERGER Recorded Feb 26, 2015
From: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
Reel/Frame 035036/0484 →
MERGER Recorded Feb 26, 2015
From: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
To: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
Reel/Frame 035036/0529 →
MERGER Recorded Feb 26, 2015
From: HITACHI YONEZAWA ELECTRONICS CO., LTD.
To: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
Reel/Frame 035100/0259 →
CHANGE OF NAME Recorded Feb 26, 2015
From: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 035100/0297 →