Electrostatic discharge protection structure and fabrication method thereof
An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.
1. An electrostatic discharge protection structure, comprising:
a substrate being of a first type of electrical conductivity;
a well region in the substrate and being of a second type of electrical conductivity;
a substrate contact region in the substrate and being of the first type of electrical conductivity;
a well contact region in the well region and being of the second type of electrical conductivity;
a substrate counter-doped region in the substrate, between the substrate contact region and the well contact region, and being of the second type of electrical conductivity;
a well counter-doped region in the well region, between the substrate contact region and the well contact region, and being of the first type of electrical conductivity;
a communication region at a lateral junction between the substrate and the well region and between the substrate counter-doped region and the well counter-doped region, the communication region in contact with the substrate and the well region;
a first isolation region in the substrate and between the substrate counter-doped region and the communication region;
a second isolation region in the well region and between the well counter-doped region and the communication region;
an oxide layer adjacent to but not in contact with the communication region, the oxide layer configured such that:
a first end of the oxide layer is disposed on the first isolation region and a second end of the oxide layer is disposed on the substrate, or
the first end of the oxide layer is disposed on the second isolation region and the second end of the oxide layer is disposed on the well region; and
a field plate structure disposed on a side of the oxide layer, the side of the oxide layer facing away from the substrate.
2. The electrostatic discharge protection structure of claim 1 , wherein the first type of electrical conductivity is p type and the second type of electrical conductivity is n type, wherein the communication region is of the n type of electrical conductivity, wherein the first end of the oxide layer is disposed on the first isolation region and the second end of the oxide layer is disposed on the substrate, wherein the electrostatic discharge protection structure further comprises an anode lead line or a cathode lead line, wherein the anode lead line is electrically coupled to the well counter-doped region and the well contact region, and wherein the cathode lead line is electrically coupled to the substrate contact region, the substrate counter-doped region, and the field plate structure.
3. The electrostatic discharge protection structure of claim 1 , wherein the first type of electrical conductivity is p type and the second type of electrical conductivity is n type, wherein the communication region is of the p type of electrical conductivity, wherein the first end of the oxide layer is disposed on the second isolation region and the second end of the oxide layer is disposed on the well region, wherein the electrostatic discharge protection structure further comprises an anode lead line or a cathode lead line, wherein the anode lead line is electrically coupled to the well counter-doped region, the well contact region, and the field plate structure, and wherein the cathode lead line is electrically coupled to the substrate contact region and the substrate counter-doped region.
4. The electrostatic discharge protection structure of claim 1 , wherein the first type of electrical conductivity is n type and the second type of electrical conductivity is p type, wherein the communication region is of the p type of electrical conductivity, wherein the first end of the oxide layer is disposed on the first isolation region and the second end of the oxide layer is disposed on the substrate, wherein the electrostatic discharge protection structure further comprises an anode lead line or a cathode lead line, wherein the anode lead line is electrically coupled to the substrate contact region, the substrate counter-doped region, and the field plate structure, and wherein the cathode lead line is electrically coupled to the well counter-doped region and the well contact region.
5. The electrostatic discharge protection structure of claim 1 , wherein the first type of electrical conductivity is n type and the second type of electrical conductivity is p type, wherein the communication region is of the n type of electrical conductivity, wherein the first end of the oxide layer is disposed on the second isolation region and the second end of the oxide layer is disposed on the well region, wherein the electrostatic discharge protection structure further comprises an anode lead line or a cathode lead line, wherein the anode lead line is electrically coupled to the substrate contact region and the substrate counter-doped region, and wherein the cathode lead line is electrically coupled to the well counter-doped region, the well contact region, and the field plate structure.
6. The electrostatic discharge protection structure of claim 1 , wherein a material of the field plate structure comprises polysilicon.
7. The electrostatic discharge protection structure of claim 1 , wherein the first isolation region and the second isolation region comprise shallow trench isolation structures.