Lithographic patterning process and resists to use therein
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
1. A method of irradiating a resist film of a resist material with a patterned beam of EUV light having a wavelength of less than 11 nm, the resist material comprising a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu and Zn, wherein said silicon-containing polymer comprises a monomer having the following formula:
wherein R is a C 1 to C 20 alkylsilyl group or a group having the formula:
wherein R 1 , R 2 and R 3 group are each a C 1 to C 20 alkylsilyl group.
2. The method of claim 1 , wherein the wavelength is in the range of 5-8 nm.
3. The method of claim 1 , wherein the resist material is deposited as a film onto a substrate, and wherein said film has a thickness ranging from 10 nm to 100 nm.
4. The method of claim 1 , wherein said alkylsilyl group is selected from the group consisting of: trimethylsilyl, pentamethyldisilyl, heptamethyltrisilyl and nonamethyltetrasilyl.
5. The method of claim 1 , wherein said compound is an oxide.
6. The method of claim 1 , wherein said element is tantalum.
7. A photolithographic patterning process, comprising:
forming a film of a resist material on a substrate;
irradiating the resist film with a patterned radiation beam of EUV light of a wavelength of less than 11 nm; and
developing said resist film;
wherein said resist material comprises a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu and Zn, and
wherein said silicon-containing polymer comprises a monomer having the following formula:
wherein R is a C 1 to C 20 alkylsilyl group or a group having the formula:
wherein R 1 , R 2 and R 3 are each a C 1 to C 20 alkylsilyl group.
8. The process of claim 7 , wherein said wavelength is the range of 5-8 nm.
9. The process of claim 7 , wherein said film has a thickness ranging from 10 nm to 100 nm.
10. The process of claim 7 , wherein said alkylsilyl group is selected from the group consisting of: trimethylsilyl, pentamethyldisilyl, heptamethyltrisilyl and nonamethyltetrasilyl.
11. The process of claim 7 , wherein said compound is an oxide.
12. The process of claim 7 , wherein said element is tantalum.
13. A resist material comprising a silicon-containing polymer comprising a monomer having the following formula:
wherein R is a group having the formula:
wherein R 1 , R 2 and R 3 are each a C 1 to C 20 alkylsilyl group.
14. The resist material according to claim 13 , wherein the resist material has a sensitivity for EUV light having a wavelength of less than 11 nm.
15. The resist material according to claim 13 , wherein the resist material has a sensitivity for EUV light having a wavelength in the range of 5-8 nm.
16. A method of manufacturing a device, wherein patterned device features are applied to a substrate by a sequence of lithographic and other processing steps, and wherein at least one of said lithographic steps is a photolithographic patterning process, comprising:
forming a film of a resist material on a substrate;
irradiating the resist film with a patterned radiation beam of EUV light of a wavelength of less than 11 nm; and
developing said resist film;
wherein said resist material comprises a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu and Zn, and
wherein said silicon-containing polymer comprises a monomer having the following formula:
wherein R is a C 1 to C 20 alkylsilyl group or a group having the formula:
wherein R 1 , R 2 and R 3 are each a C 1 to C 20 alkylsilyl group.
17. A method of using a silicon-containing polymer or a compound comprising at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu and Zn in a resist material for an EUV lithographic process, wherein the wavelength of the EUV radiation used in said process is less than 11 nm, wherein said silicon-containing polymer comprises a monomer having the following formula:
wherein R is a C 1 to C 20 alkylsilyl group or a group having the formula:
wherein R 1 , R 2 and R 3 group are each a C 1 to C 20 alkylsilyl group.
18. The method of claim 17 , wherein said wavelength is in the range of 5-8 nm.
19. The method of claim 18 , wherein the resist material is deposited as a film onto a substrate and wherein said film has a thickness ranging from 10 to 100 nm.
20. The method of claim 17 , wherein said alkylsilyl group is chosen in the group comprising trimethylsilyl, pentamethyldisilyl, heptamethyltrisilyl and nonamethyltetrasilyl.
21. The method of claim 17 , wherein said compound is an oxide.
22. The method of claim 17 , wherein said element is tantalum.
23. A resist material comprising a compound comprising at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu and Zn, wherein the resist material has a sensitivity for EUV light having a wavelength of less than 11 nm.
24. The resist material according to claim 23 , wherein said compound is an oxide.
25. The resist material according to claim 24 , wherein said oxide is dissolved in an anhydrous alcohol.
26. The resist material according to claim 23 , wherein said element is tantalum.
27. The resist material according to claim 26 , wherein said compound is a tantalum penta ethoxide.
28. The resist material according to claim 23 , wherein said compound has a reduced mean free path of photogenerated electrons.
29. The resist material according to claim 28 , wherein said mean free path is about 2 nm.
30. The resist material according to claim 23 , wherein said material is provided as a sol gel.
31. The resist material according to claim 23 , wherein the resist material has a sensitivity for EUV light having a wavelength in the range of 5-8 nm.