Apparatus fabrication using localized annealing
View Patent ↗A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
1. A method for fabricating an electrical or electronic apparatus using radiation annealing, the method comprising:
forming an electrically activatable annealable layer on a substrate;
forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is permanently formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the electrical or electronic apparatus, wherein the annealable layer and the radiation layer are included in a first pair of layers;
forming at least one additional pair of layers on the substrate, wherein each additional pair of layers includes another annealable layer and another radiation absorbing layer;
directing radiation toward the electrical or electronic apparatus to, for each pair of layers, heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
2. The method of claim 1 , wherein for at least one pair of layers the radiation absorbing layer is formed in a different Cartesian coordinate plane than the annealable layer such the radiation absorbing layer is formed perpendicular to a major surface of the annealable layer.
3. The method of claim 1 , wherein for at least one pair of layers the radiation absorbing layer is formed in a same Cartesian coordinate plane as the annealable layer such that the radiation absorbing layer is formed parallel to a major surface of the annealable layer.
4. The method of claim 1 , wherein for at least one pair of layers the radiation absorbing layer is formed on the substrate before the annealable layer is formed on the substrate.
5. The method of claim 1 , wherein for at least one pair of layers the radiation absorbing layer is formed on the substrate after the annealable layer is formed on the substrate.
6. The method of claim 1 , wherein directing the radiation toward the apparatus comprises directing the radiation once after all of the pairs of layers are formed on the substrate.
7. The method of claim 1 , wherein directing the radiation toward the apparatus comprises directing the radiation after each pair of layers is formed on the substrate.
8. The method of claim 1 , wherein for at least one pair of layers the radiation absorbing layer is formed into a shape that includes at least one of:
a zero-dimensional shape;
a one-dimensional shape;
a two-dimensional shape; or
a three-dimensional shape.
9. A method for fabricating an electrical or electronic apparatus using radiation annealing, the method comprising:
forming an electrically activatable first annealable layer on a substrate;
forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is permanently formed adjacent to at least a portion of the first annealable layer and non-adjacent to a portion of the electrical or electronic apparatus, wherein forming the radiation absorbing layer on the substrate comprises positioning radiation absorbing material adjacent to a first portion of the first annealable layer and non-adjacent to a second portion of the first annealable layer, such that the first portion of the first annealable layer is annealed using the radiation without annealing the second portion of the first annealable layer;
forming a second annealable layer on the substrate after the first annealable layer and the radiation absorbing layer are formed on the substrate, wherein the radiation absorbing layer has a higher radiation absorption capability than the second annealable layer, and wherein a first portion of the second annealable layer is positioned adjacent to the radiation absorbing material and a second portion of the second annealable layer is positioned non-adjacent to the radiation absorbing material;
directing radiation toward the electrical or electronic apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the first annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer and such that the first portion of the second annealable layer is annealed using the radiation without annealing the second portion of the second annealable layer.
10. The method of claim 9 , wherein positioning the radiation absorbing material adjacent to the first portion of the annealable layer and non-adjacent to the second portion of the annealable layer, for at least one of the first or second annealable layers, comprises shaping the radiation absorbing material.
11. The method of claim 9 , wherein forming at least one of the first or second annealable layers on the substrate comprises shaping the annealable layer before positioning the radiation absorbing material adjacent to the first portion of the annealable layer and non-adjacent to the second portion of the annealable layer.
12. The method of claim 11 , wherein the radiation absorbing material is positioned laterally to the first portion of the annealable layer.
13. The method of claim 11 , wherein the radiation absorbing material is at least partially enclosed by the first portion of the annealable layer.
14. An apparatus comprising:
a structure having an annealed section and a non-annealed section;
susceptor material that is integral to the apparatus and permanently positioned adjacent to the annealed section such that the annealed and non-annealed sections are defined by a shape of the susceptor material, wherein the annealed section was formed from material that was annealed at a temperature at least partially due to heat from the susceptor material's exposure to radiation, wherein the annealed section and the susceptor material comprise multiple annealable layer and susceptor layer pairs.
15. The apparatus of claim 14 , wherein the annealed section comprises at least one of:
a semiconductor material having an electrically activated dopant;
an annealed silicide layer;
a first constituent layer bonded to a second constituent layer; or
an annealed organic material.
16. The apparatus of claim 14 , wherein the susceptor material is configured to absorb radiation to a greater degree than the material of the annealed section.
17. The apparatus of claim 16 , wherein the susceptor material comprises a first susceptor layer that is configured with a first dielectric loss factor that generates a first absorption capability, which corresponds to a frequency of a first radiation used to generate the annealed section.
18. The apparatus of claim 17 , wherein the susceptor material comprises a second susceptor layer that is configured with a second dielectric loss factor that generates a second absorption capability, which corresponds to a frequency of a second radiation used to generate the annealed section.