Ion implantation methods

1. A method of forming an ion implanted region in a semiconductor device, comprising:

(a) providing a semiconductor substrate having a plurality of regions to be ion implanted;

(b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent;

(c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises a mixture of: a matrix polymer; a free acid; and a solvent;

(d) heating the coated semiconductor substrate;

(e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and

(f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask.

2. The method of claim 1 , wherein the free acid is an aromatic acid.

3. The method of claim 1 , wherein the free acid is a non-aromatic acid.

4. The method of claim 1 , wherein the solvent of the descumming composition comprises an organic solvent.

5. The method of claim 1 , wherein the descumming composition is an aqueous solution.

6. The method of claim 1 , wherein the rinsing agent comprises water or an aqueous alkaline solution.

7. The method of claim 1 , wherein the rinsing agent comprises an organic solvent or solvent mixture.

8. The method of claim 7 , wherein the rinsing agent further comprises water.

9. The method of claim 1 , wherein the matrix polymer of the descumming composition comprises functional groups chosen from —OH, —COOH, —SO 3 H, —SiOH, hydroxyl styrene, hydroxyl naphthalene, sulfonamide, hexafluoroisopropyl alcohol, anhydrate, lactone, ester, ether, allylamine, pyrolidone and combinations thereof.

10. The method of claim 1 , wherein forming the photoresist pattern comprises coating a layer of the photoresist composition over a developable bottom antireflective layer that is exposed and developed simultaneously with the photoresist pattern.

11. The method of claim 2 , wherein the aromatic acid contains fluorine.

12. The method of claim 11 , wherein the aromatic acid is chosen from one or more of the following acids:

13. The method of claim 3 , wherein the non-aromatic acid has at least one fluorine substituent at the alpha position of the acid group.

14. The method of claim 1 , wherein the free acid is a sulfonic acid.

15. The method of claim 1 , wherein the matrix polymer is free of functional groups chosen from —COOH, —SO 3 H and combinations thereof.

16. The method of claim 1 , wherein the free acid is chosen from those of the following formula (I):

R 0 ASO 3 H  (I)

wherein: R 0 is a linear, branched or cyclic alkyl group having from 1 to 30 carbon atoms, optionally substituted with a fluorine atom or hydroxy group; and A is a single bond, an ether group, a thioether group, a carbonyl group, an ester group, an amido group, a sulfonamido group, a urethane group, a urea group, an alkylene group optionally substituted with a fluorine atom or hydroxy group, or a combination thereof.

17. The method of claim 1 , wherein the free acid is chosen from those of the following formula (II):

wherein: R 1 independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C20 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 1 independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; a and b are independently an integer from 0 to 5; and a+b is 5 or less.

18. The method of claim 1 , wherein the free acid is chosen from those of the following formula (III), (IV), (V), (VI) and (VI):

wherein: R 2 and R 3 each independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C16 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 2 and Z 3 each independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; c and d are independently an integer from 0 to 4; c+d is 4 or less; e and f are independently an integer from 0 to 3; and e+f is 3 or less;

wherein: R 4 , R 5 and R 6 each independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C12 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 4 , Z 5 and Z 6 each independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; g and h are independently an integer from 0 to 4; g+h is 4 or less; i and j are independently an integer from 0 to 2; i+j is 2 or less; k and l are independently an integer from 0 to 3; and k+lis 3 or less;

wherein: R 4 , R 5 and R 6 each independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C12 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 4 , Z 5 and Z 6 each independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; g and h are independently an integer from 0 to 4; g+h is 4 or less; i and j are independently an integer from 0 to 1; i+j is 1or less; k and l are independently an integer from 0 to 4; and k+l is 4 or less;

wherein: R 7 and R 8 each independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C14 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 7 and Z 8 each independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; m and n are independently an integer from 0 to 5; m+n is 5 or less; 0 and p are independently an integer from 0 to 4; and o+p is 4 or less; and

wherein: X is O or S; R 9 independently represents a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C5-C20 aryl group or a combination thereof, optionally containing one or more group chosen from carbonyl, carbonyloxy, sulfonamido, ether, thioether, a substituted or unsubstituted alkylene group, or a combination thereof; Z 9 independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1 to C5 alkoxy, formyl and sulfonic acid; q and r are independently an integer from 0 to 3; and q+r is 3 or less; and

wherein R 1 —R 9 optionally form a fused structure together with their respective associated rings.