Integrated circuit structures having off-axis in-hole capacitor and methods of forming
Various embodiments include integrated circuit structures having an off-axis in-hole capacitor. In some embodiments, an integrated circuit (IC) structure includes: a substrate layer having an upper surface; an IC chip at least partially contained within the substrate layer and aligned with a minor axis perpendicular to the upper surface of the substrate layer; an aperture in the substrate layer, the aperture physically separated from the IC chip; and a capacitor in the aperture and at least partially contained within the substrate layer, the capacitor being physically isolated from the IC chip, wherein the capacitor is aligned with an axis perpendicular to the upper surface of the substrate layer and offset from the minor axis of the IC chip.
1. A method comprising:
forming an aperture in an integrated circuit (IC) structure, the IC structure including:
a substrate layer having an upper surface; and
an IC chip at least partially contained within the substrate layer and aligned with a minor axis perpendicular to the upper surface of the substrate layer,
wherein the aperture is physically separated from the IC chip and is aligned with an axis perpendicular to the upper surface of the substrate layer and offset from the minor axis of the IC chip; and
positioning a capacitor structure in the aperture such that at least a portion of the capacitor structure is located below the upper surface of the substrate layer and the capacitor structure is physically isolated from the IC chip.
2. The method of claim 1 , wherein the positioning includes inserting the capacitor structure into the aperture at a depth coplanar with a depth of the IC chip in the laminate layer, and wherein the substrate layer includes a laminate layer.
3. The method of claim 1 , wherein the positioning is performed after assembly of the IC chip in the substrate layer.
4. The method of claim 1 , further comprising mounting the capacitor structure to an inner surface of the aperture after the positioning, the inner surface including a power contact and a ground contact.
5. The method of claim 4 , wherein the capacitor structure includes:
a capacitor;
a set of power leads extending from the capacitor; and
a set of ground leads extending from the capacitor,
the method further comprising applying a flux to at least one of the set of power leads or the set of ground leads prior to the positioning,
wherein the positioning includes coupling the at least one of the set of power leads or the set of ground leads to at least one of the power contact or the ground contact within the aperture using the flux, and
wherein the mounting includes heating the at least one of the set of power leads or the set of ground leads to bond the at least one of the set of power leads or the set of ground leads to the at least one of the power contact or the ground contact.
6. The method of claim 4 , wherein the capacitor structure includes:
a capacitor;
a set of power leads extending from the capacitor; and
a set of ground leads extending from the capacitor,
wherein the aperture has a diameter, and wherein a combined width of the capacitor and the set of power leads, or a combined width of the capacitor and the set of ground leads, is greater than the diameter of the aperture, and
wherein the positioning includes inserting the capacitor structure into the aperture such that at least one of the set of power leads or the set of ground leads contacts the inner surface of the aperture and retains the capacitor structure within the aperture.
7. The method of claim 6 , wherein the at least one of the set of power leads or the set of ground leads at least partially deflects in response to the contacting of the inner surface.
8. The method of claim 6 , wherein the mounting includes heating the capacitor structure to bond the set of power leads and the set of ground leads to the inner surface of the aperture.
9. The method of claim 4 , further comprising positioning an additional capacitor structure in the aperture with the capacitor structure such that at least a portion of the additional capacitor structure is located below the upper surface of the substrate layer and the additional capacitor structure is physically isolated from the IC chip.