Fin-last replacement metal gate FinFET
View Patent ↗FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.
1. A field effect transistor device, comprising:
a source region;
a drain region;
a plurality of fins connecting the source region and the drain region, wherein the fins serve as a channel region of the device, and wherein the fins have a pitch of from about 20 nm to about 200 nm and each of the fins has a width of from about 2 nm to about 40 nm;
a metal gate which at least partially surrounds each of the fins, wherein the source and the drain regions are self-aligned with the metal gate;
a dielectric filler layer around the metal gate;
a first set of spacers between the dielectric filler layer and the metal gate, wherein the fins are present only between the first set of spacers; and
a second set of spacers between the first set of spacers and the metal gate, wherein the second set of spacers is present over the fins.
2. The device of claim 1 , wherein the fins are present over an insulator, and wherein the insulator is undercut beneath the fins such that the metal gate completely surrounds each of the fins in a gate-all-around configuration.
3. The device of claim 1 , further comprising a gate dielectric on the fins that separates the fins from the metal gate.
4. The device of claim 3 , wherein the gate dielectric comprises hafnium oxide.
5. The device of claim 1 , wherein the metal gate comprises at least one workfunction setting metal and at least one fill metal.
6. The device of claim 5 , wherein the workfunction setting metal comprises one or more of titanium nitride and tantalum nitride and wherein the fill metal comprises one or more of tungsten and aluminum.