Heated carrier substrate semiconductor die singulation method

1. A method of singulating a wafer comprising:

providing a wafer having a plurality of die formed on the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein the first and the second major surfaces are parallel to one another, and wherein a layer of material is formed along the second major surface;

placing the wafer onto a first carrier substrate, wherein the layer of material is adjacent the first carrier substrate such that the second major surface faces the first carrier substrate;

singulating the wafer through the spaces to form singulation lines, wherein singulating includes stopping in proximity to the layer of material;

heating the first carrier substrate; and

applying a localized and perpendicular pressure to at least one of the first major surface or the second major surface to separate the layer of material in the singulation lines.

2. The method of claim 1 , wherein heating the first carrier substrate includes heating the first carrier substrate at a temperature between about 35 degrees Celsius and about 45 degrees Celsius.

3. The method of claim 1 , wherein providing the wafer includes providing the wafer where the layer of material is separated from at least some die edges.

4. The method of claim 1 , wherein applying the localized and perpendicular pressure comprises moving a mechanical device transversely along the first carrier substrate.

5. The method of claim 1 further comprising placing a second carrier substrate on the first major surface, and wherein applying the localized and perpendicular pressure includes moving a mechanical device along the second carrier substrate.

6. The method of claim 1 , wherein placing the wafer onto the first carrier substrate comprises placing the wafer onto a first carrier tape.

7. The method of claim 1 , wherein applying the localized and perpendicular pressure includes applying the localized and perpendicular pressure with the carrier substrate stationary.

8. The method of claim 1 , wherein applying the localized and perpendicular pressure includes applying the localized and perpendicular pressure with the carrier substrate rotating.

9. The method of claim 1 , wherein applying the localized and perpendicular pressure comprises applying the localized and perpendicular pressure with at least one stylus.

10. The method of claim 9 , wherein applying the localized and perpendicular pressure with the at least one stylus comprises applying the localized and perpendicular pressure with at least one stylus having a radius that is approximately double the cross-sectional area of a die within the wafer.

11. The method of claim 1 , wherein providing the wafer comprises providing a semiconductor wafer having a back metal layer overlying the second major surface.

12. The method of claim 1 , wherein singulating the wafer comprises plasma etching the wafer.

13. A method of singulating die from a wafer comprising:

providing a wafer having a plurality of die formed on the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface;

placing the wafer onto a first carrier substrate, wherein the layer of material is adjacent the first carrier substrate;

singulating the wafer through the spaces to form singulation lines, wherein the singulation lines terminate before penetrating completely through the layer of material;

placing the wafer onto to a second carrier substrate, wherein the layer of material is opposite to the second carrier substrate;

applying heat to the first carrier substrate; and

moving a mechanical device along the second carrier substrate to separate the layer of material in the singulation lines.

14. The method of claim 13 , wherein placing the wafer onto the first carrier substrate comprises placing the wafer onto a first carrier tape, and wherein placing the wafer onto the second carrier substrate comprising placing the wafer onto a second carrier tape.

15. The method of claim 13 , wherein moving the mechanical device comprises moving at least one stylus.

16. The method of claim 13 , wherein applying heat includes heating the first carrier substrate to a temperature from about 35 degrees Celsius to about 45 degrees Celsius.

17. The method of claim 13 , wherein singulating the wafer comprises plasma etching the wafer.

18. A method of singulating a substrate comprising:

providing a substrate having a plurality of die formed on the substrate and separated from each other by spaces, wherein the substrate has first and second opposing major surfaces, and wherein a layer of material is formed overlying the second major surface;

placing a carrier tape onto the layer of material;

plasma etching the substrate through the spaces to form singulation lines, wherein the singulation lines terminate in proximity to the layer of material;

placing a carrier film onto the substrate opposite to the layer of material;

heating the carrier tape to a temperature from about 35 degrees Celsius to about 45 degrees Celsius; and

applying a localized pressure to the first major surface using a mechanical device to separate the layer of material.

19. The method of claim 18 , wherein applying a localized pressure comprises applying a localized pressure with at least one stylus.

20. The method of claim 18 , wherein providing the substrate includes providing a semiconductor wafer having a wafer backside coating layer formed overlying the second major surface.