Wire bonder and method of calibrating a wire bonder
Disclosed is a wire bonder comprising: a processor; a bond head coupled to the processor, the processor being configured to control motion of the bond head; a bonding tool mounted to the bond head, the bonding tool being drivable by the bond head to form an electrical interconnection between a semiconductor die and a substrate to which the semiconductor die is mounted using a bonding wire; and a measuring device coupled to the bond head, the measuring device being operable to measure a deformation of a bonding portion of the bonding wire as the bonding tool is driven by the bond head to connect the bonding wire to the semiconductor die via the bonding portion. Specifically, the processor is configured to derive at least one correlation between the measured deformation of the bonding portion and an operating parameter of the wire bonder; compare the at least one derived correlation against a predetermined correlation between the operating parameter of the wire bonder and a desired deformation of the bonding portion; and calibrate the operating parameter of the wire bonder based on the comparison between the at least one derived correlation and the predetermined correlation of the deformation of the bonding portion against the operating parameter of the wire bonder. A method of calibrating a wire bonder is also disclosed.
1. A wire bonder comprising:
a processor;
a bond head coupled to the processor, the processor being operative to control motion of the bond head;
a bonding tool mounted to the bond head, the bonding tool being operative to be driven by the bond head to form an electrical interconnection between a semiconductor die and a substrate to which the semiconductor die is mounted using a bonding wire;
a scale;
a measuring device coupled to the bond head, the measuring device being operative to measure a deformation of a bonding portion of the bonding wire as the bonding tool is driven by the bond head to connect the bonding wire to the semiconductor die via the bonding portion, wherein the measuring device is movable relative to the scale for the measuring device to measure the position of the bond head and the extent of the deformation of the bonding portion and the measured deformation of the bonding portion is measured by comparing the position of the bonding tool when the bonding portion just contacts the semiconductor die to the position of the bonding tool at which the deformation of the bonding portion is measured; and
the wire bonder further comprises a contact sensor which is electrically connected between the bonding portion and the semiconductor die, the contact sensor sensing when the bonding portion just contacts the semiconductor die by the formation of a closed electrical circuit including the bonding portion, the semiconductor die, and the contact sensor;
wherein the processor is further operative to
derive at least one correlation between the measured deformation of the bonding portion and an operating parameter of the wire bonder;
compare the at least one derived correlation to a predetermined correlation between the operating parameter of the wire bonder and a desired deformation of the bonding portion; and
calibrate the operating parameter of the wire bonder based on the comparison between the at least one derived correlation and the predetermined correlation of the deformation of the bonding portion against the operating parameter of the wire bonder.
2. The wire bonder of claim 1 , wherein the processor is configured to calculate a conversion factor in order to calibrate the operating parameter of the wire bonder.
3. The wire bonder of claim 1 , wherein the operating parameter of the wire bonder is an ultrasonic current delivered from the bond head to form the electrical interconnection between the semiconductor die and the substrate.
4. The wire bonder of claim 1 , wherein the operating parameter of the wire bonder is a bond force delivered from the bond head to form the electrical interconnection between the semiconductor die and the substrate.
5. The wire bonder of claim 1 , wherein the operating parameter of the wire bonder is a deformation setting of the bonding portion.
6. The wire bonder of claim 5 , wherein the deformation setting comprises a combination of an ultrasonic current and a bond force, both of which are operatively delivered from the bond head to form the electrical interconnection between the semiconductor die and the substrate.
7. A wire bonder comprising:
a processor;
a bond head coupled to the processor, the processor being configured to control motion of the bond head;
a bonding tool mounted to the bond head, the bonding tool being drivable by the bond head to form an electrical interconnection between a semiconductor die and a substrate to which the semiconductor die is mounted using a bonding wire; and
a measuring device coupled to the bond head, the measuring device being operable to measure a deformation of a bonding portion of the bonding wire as the bonding tool is driven by the bond head to connect the bonding wire to the semiconductor die via the bonding portion,
wherein the processor is configured to
derive at least one correlation between the measured deformation of the bonding portion and an operating parameter of the wire bonder;
compare the at least one derived correlation to a predetermined correlation between the operating parameter of the wire bonder and a desired deformation of the bonding portion; and
calibrate the operating parameter of the wire bonder based on the comparison between the at least one derived correlation and the predetermined correlation of the deformation of the bonding portion against the operating parameter of the wire bonder,
wherein the operating parameter of the wire bonder is a vibratory setting of an XY table of the wire bonder.
8. The wire bonder of claim 1 , wherein the measuring device is a position encoder.
9. The wire bonder of claim 8 , wherein the position encoder is configured to measure the deformation of the bonding portion along a vertical axis.