Stacked digital/RF system-on-chip with integral isolation layer
An apparatus includes a device package, a first Integrated Circuit (IC) that is packaged in the device package, and a second IC, which is packaged in the device package and is fabricated on a multi-layer interconnection circuit including a plurality of interconnection layers for interconnecting components of the second IC, wherein a selected layer in the plurality is configured to serve as a conductive shield for reducing interference between the first and second ICs.
1. A method for reception, comprising:
receiving a Radio Frequency (RF) signal using a RF Integrated Circuit (RFIC) that is packaged in a device package; and
processing the received signal using a digital IC that is packaged together with the RFIC in the device package,
wherein one of the RFIC and the digital IC is fabricated on a multi-layer circuit substrate comprising a plurality of interconnection layers for interconnecting components of the one of the RFIC and the digital IC, and wherein a selected interconnection layer inside the multi-layer substrate is configured to serve as a conductive shield for reducing interference between the RFIC and the digital IC.
2. The method according to claim 1 , wherein receiving and processing the signal comprise receiving and processing a Mobile Digital Television (MDTV) signal.
3. The method according to claim 1 , wherein the interference comprises leakage of a clock signal, which is generated in the digital IC, into the RFIC.
4. The method according to claim 1 , wherein the selected interconnection layer is not used for interconnecting any of the components.
5. The method according to claim 1 , wherein the RFIC and the digital IC are stacked one on top of the other in the device package.
6. The method according to claim 1 , wherein the interconnection layers, including the selected interconnection layer, are formed jointly in a single fabrication process of the multi-layer substrate.
7. The method according to claim 6 , wherein the single fabrication process comprises a copper interconnect process.