IP Library › Granted Patent US 9,563,209
Granted Patent B2
US 9,563,209 · App. 14/168,549 · Granted Feb 7, 2017

Raw material gas supply method

Inventors: Mitsuya Inoue (Nirasaki, JP); Makoto Takado (Oshu, JP)
Assignee: TOKYO ELECTRON LIMITED
G05D16/00C23C16/4481C23C16/45561G05D7/0676Y10T137/0379Y10T137/7758
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Quick Facts
Patent No.
US 9,563,209
App. No.
14/168,549
Granted
Feb 7, 2017
Kind
B2
Abstract

A raw material gas supply method for use in a film forming apparatus which forms a film on a substrate, includes supplying a carrier gas to a gas phase zone defined inside a raw material container accommodating a liquid or solid raw material, vaporizing the raw material, supplying a raw material gas containing the vaporized raw material from the raw material container to the film forming apparatus via a raw material gas supply path, measuring a flow rate of the vaporized raw material flowing through the raw material gas supply path, comparing the flow rate of the vaporized raw material obtained by the flow rate measurement unit with a predetermined target value, and controlling an internal pressure of the raw material container to be increased when the flow rate is higher than the predetermined target value, and to be decreased when the is lower than the predetermined target value.

Claims (13)

1. A raw material gas supply method for use in a film forming apparatus which forms a film on a substrate, the method comprising:

supplying a carrier gas to a gas phase zone defined inside a raw material container, the raw material container accommodating a liquid or solid raw material;

vaporizing the raw material;

supplying a raw material gas containing the vaporized raw material from the raw material container to the film forming apparatus via a raw material gas supply path;

measuring a flow rate of the vaporized raw material flowing through the raw material gas supply path;

comparing the measured flow rate of the vaporized raw material with a predetermined target value;

controlling an internal pressure of the raw material container to be increased when the measured flow rate of the vaporized raw material is higher than the predetermined target value, and to be decreased when the measured flow rate of the vaporized raw material is lower than the predetermined target value;

supplying a buffer gas to a downstream side of a position at which the pressure control gas is supplied in the raw material gas supply path; and

controlling a supply amount of the pressure control gas and a supply amount of the buffer gas such that a sum of the supply amount of the pressure control gas and the supply amount of the buffer gas becomes constant,

wherein controlling an internal pressure of the raw material container is preformed by supplying a pressure control gas to the raw material gas supply path.

2. The method of claim 1 , wherein controlling an internal pressure of the raw material container is performed by adjusting an opening degree of a pressure control valve provided in the raw material gas supply path.

3. A non-transitory storage medium storing a program for controlling a raw material gas supply device for use in a film forming apparatus configured to form a film on a substrate,

wherein the program causes the raw material gas supply device to perform the method of claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2014
From: INOUE, MITSUYA; TAKADO, MAKOTO
To: TOKYO ELECTRON LIMITED
Reel/Frame 032247/0715 →
Priority Claims (1)
JP 2013-017491 · Jan 31, 2013 · national
Continuity (1)
Related Publication 20140209022A1 · Jul 31, 2014