Pattern forming process
A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.
1. A pattern forming process comprising the steps of:
coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, onto a processable substrate,
prebaking the coating to remove the unnecessary solvent and to form a resist film,
exposing patternwise the resist film to high-energy radiation,
post-exposure baking,
developing in an organic solvent developer to form a negative pattern,
coating a solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum onto the negative pattern-bearing substrate,
prebaking, and
dry etching to effect image reversal for converting the negative pattern into a positive pattern.
2. The process of claim 1 wherein the solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum contains a second solvent selected from the group consisting of ether solvents of 6 to 12 carbon atoms, alcohol solvents of 4 to 10 carbon atoms, hydrocarbon solvents of 6 to 12 carbon atoms, ester solvents of 7 to 12 carbon atoms, and ketone solvents of 7 to 12 carbon atoms, and the negative pattern film experiences a film thickness loss of up to 10 nm when it is kept in contact with the second solvent for 30 seconds.
3. The process of claim 2 wherein the second solvent is selected from the group consisting of di-n-butyl ether, diisobutyl ether, di-sec-butyl ether, di-n-pentyl ether, diisopentyl ether, di-sec-pentyl ether, di-tert-amyl ether, di-n-hexyl ether, methyl cyclopentyl ether, methyl cyclohexyl ether, methyl phenyl ether, methyl benzyl ether, ethyl cyclopentyl ether, ethyl cyclohexyl ether, ethyl phenyl ether, ethyl benzyl ether, 1-butyl alcohol, 2-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, tert-amyl alcohol, neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl-3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dimethyl-2-butanol, 2,2-diethyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-1-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclohexanol, 1-octanol, benzene, toluene, xylene, mesitylene, ethylbenzene, n-propylbenzene, cumene, n-butylbenzene, cymene, amylbenzene, diethylbenzene, octane, nonane, decane, turpentine oil, pinene, 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, ethyl n-butyl ketone, di-n-butyl ketone, diisobutyl ketone, amyl phoronate, amyl acetate, isoamyl acetate, 2-ethylhexyl acetate, cyclohexyl acetate, methylcyclohexyl acetate, hexyl formate, ethyl valerate, propyl valerate, isopropyl valerate, butyl valerate, isobutyl valerate, tert-butyl valerate, amyl valerate, isoamyl valerate, ethyl isovalerate, propyl isovalerate, isopropyl isovalerate, butyl isovalerate, isobutyl isovalerate, tert-butyl isovalerate, isoamyl isovalerate, ethyl pivalate, propyl pivalate, isopropyl pivalate, butyl pivalate, tert-butyl pivalate, ethyl pentenoate, propyl pentenoate, isopropyl pentenoate, butyl pentenoate, tert-butyl pentenoate, propyl crotonate, isopropyl crotonate, butyl crotonate, tert-butyl crotonate, butyl propionate, isobutyl propionate, tert-butyl propionate, benzyl propionate, propyl butyrate, butyl butyrate, isobutyl butyrate, tert-butyl butyrate, methyl benzoate, ethyl benzoate, propyl benzoate, butyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, ethyl phenylacetate, 2-phenylethyl acetate, and mixtures thereof.
4. The process of claim 1 wherein the resin having a dissolution rate in an organic solvent developer that lowers under the action of acid comprises recurring units having an acid labile group which is eliminatable with acid.
5. The process of claim 1 wherein the resin having a dissolution rate in an organic solvent developer that lowers under the action of acid comprises in copolymerized form recurring units having an acid labile group which is eliminatable with acid and recurring units having an adhesive group which is selected from the group consisting of lactone ring, lactam ring, cyano group, carbonate group, acid anhydride, ester group, disulfone group, sultone group, amide group, carbamate group, carbonyl group, hydroxyl group, and carboxyl group.
6. The process of claim 1 wherein the resist composition comprises a resin comprising recurring units having 7-oxanorbornane ring and recurring units having an acid labile group which is eliminatable with acid as base resin.
7. The process of claim 6 wherein the recurring units having 7-oxanorbornane ring are recurring units (a) having the general formula (1):
wherein R 1 is hydrogen or methyl, R 2 is a single bond, or a straight, branched or cyclic C 1 -C 6 alkylene group which may contain an ether or ester moiety and which has a primary or secondary carbon atom through which it is linked to the ester moiety in the formula, R 3 , R 4 , and R 5 are each independently hydrogen, a straight, branched or cyclic C 1 -C 6 alkyl group or cyano group, and a is a number in the range: 0<a<1.0.
8. The process of claim 6 wherein the recurring units having an acid labile group are recurring units (b) having a carboxyl group substituted with an acid labile group and/or recurring units (c) having a hydroxyl group substituted with an acid labile group, represented by the general formula (2):
wherein R 6 and R 8 each are hydrogen or methyl, R 7 and R 10 each are an acid labile group, Y is a single bond or —C(═O)—O—R 11 —, R 11 is a straight, branched or cyclic C 1 -C 10 alkylene group which may have an ether or ester moiety, or a naphthylene group, Z is a single bond or —C(═O)—O—, R 9 is a single bond, a straight, branched or cyclic C 1 -C 15 alkylene group or a trivalent group obtained by eliminating one hydrogen from the alkylene group, which may have an ether or ester moiety, or a naphthylene group or a trivalent group obtained by eliminating one hydrogen from the naphthylene group, n is 1 or 2, b and c are numbers in the range: 0≦b<1.0, 0≦c<1.0, and 0<b+c<1.0.
9. The process of claim 1 wherein the organic solvent developer used in the developing step to form the negative pattern is selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, amyl acetate, isoamyl acetate, butenyl acetate, propyl formate, butyl formate, isobutyl formate, amyl formate, isoamyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate, and mixtures thereof.
10. The process of claim 1 wherein the negative pattern is a hole pattern, and a dot pattern is formed by reversal of the hole pattern.
11. The process of claim 1 wherein the negative pattern is a trench pattern, and a line pattern is formed by reversal of the trench pattern.
12. The process of claim 1 wherein the exposure step uses an ArF excimer laser of wavelength 193 nm.
13. The process of claim 1 wherein the exposure step includes immersion lithography with water held between a projection lens and the substrate.
14. A pattern forming process comprising the steps of:
coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, onto a processable substrate,
prebaking the coating to remove the unnecessary solvent and to form a resist film,
exposing patternwise the resist film to high-energy radiation,
post-exposure baking,
developing in an organic solvent developer,
coating a solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum at the end of development,
prebaking, and
dry etching to effect image reversal for converting a negative pattern into a positive pattern.
15. The process of claim 14 wherein the solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum contains a second solvent selected from the group consisting of ether solvents of 6 to 12 carbon atoms, alcohol solvents of 4 to 10 carbon atoms, hydrocarbon solvents of 6 to 12 carbon atoms, ester solvents of 7 to 12 carbon atoms, and ketone solvents of 7 to 12 carbon atoms, and the negative pattern film experiences a film thickness loss of up to 10 nm when it is kept in contact with the second solvent for 30 seconds.
16. The process of claim 14 wherein the resist composition comprises a resin comprising recurring units having 7-oxanorbornane ring and recurring units having an acid labile group which is eliminatable with acid as base resin.
17. The process of claim 16 wherein the recurring units having 7-oxanorbornane ring are recurring units (a) having the general formula (1):
wherein R 1 is hydrogen or methyl, R 2 is a single bond, or a straight, branched or cyclic C 1 -C 6 alkylene group which may contain an ether or ester moiety and which has a primary or secondary carbon atom through which it is linked to the ester moiety in the formula, R 3 , R 4 , and R 5 are each independently hydrogen, a straight, branched or cyclic C 1 -C 6 alkyl group or cyano group, and a is a number in the range: 0<a<1.0.
18. The process of claim 14 wherein the negative pattern is a hole pattern, and a dot pattern is formed by reversal of the hole pattern.
19. The process of claim 14 wherein the negative pattern is a trench pattern, and a line pattern is formed by reversal of the trench pattern.