Shielding MEMS structures during wafer dicing
A MEMS wafer ( 46 ) includes a front side ( 52 ) having a plurality of MEMS structure sites ( 60 ) at which MEMS structures ( 50 ) are located. A method ( 40 ) for protecting the MEMS structures ( 50 ) includes applying ( 44 ) a non-active feature ( 66 ) on the front side of the MEMS wafer in a region that is devoid of the MEMS structures and mounting ( 76 ) the front side of the MEMS wafer in a dicing frame ( 86 ) such that a back side ( 74 ) of the MEMS wafer is exposed. The MEMS wafer is then diced ( 102 ) from the back side into a plurality of MEMS dies ( 48 ).
1. A method for protecting microelectromechanical systems (MEMS) structures on a MEMS wafer, said MEMS wafer including a front side having a plurality of MEMS structure sites at which said MEMS structures are located, and said method comprising:
applying a non-active feature on said front side of said MEMS wafer at a region of said MEMS wafer that is devoid of said MEMS structures, wherein said non-active feature comprises a nitride film;
mounting said front side of said MEMS wafer in a dicing frame such that a back side of said MEMS wafer is exposed; and
dicing said MEMS wafer from said back side into a plurality of MEMS dies.
2. A method as claimed in claim 1 wherein said applying operation includes placing said non-active feature at a perimeter of each of said MEMS structure sites.
3. A method as claimed in claim 1 wherein said applying operation includes placing at least a portion of said non-active feature in a scribe street of said MEMS wafer.
4. A method as claimed in claim 1 wherein said applying operation comprises:
applying a first material layer of said non-active feature on said front side of said MEMS wafer; and
applying a second material layer of said non-active feature on said first material layer to form a stacked arrangement of said first and second material layers.
5. A method as claimed in claim 1 wherein said non-active feature has a first height above a surface of said front side of said MEMS wafer that is greater than a second height of said MEMS structures above said surface.
6. A method as claimed in claim 5 wherein said mounting operation comprises attaching said non-active feature to a dicing tape, said first height of said non-active feature preventing contact of said MEMS structures with said dicing tape during said attaching operation.
7. A method as claimed in claim 6 wherein said first height of said non-active feature prevents contact of said MEMS structures with said dicing tape during said dicing operation.
8. A method as claimed in claim 6 wherein said dicing tape includes an adhesive layer attachable to said non-active feature, said adhesive layer having an adhesive thickness that is no greater than a difference between said first height and said second height.
9. A method as claimed in claim 1 wherein following said dicing operation, at least a portion of said non-active feature remains attached to said front side of said MEMS wafer, and said method further comprises leaving said remaining portion of said non-active feature intact on said front side of said MEMS wafer.
10. A method as claimed in claim 1 wherein said MEMS structures include pressure sensors having sense diaphragms located in said MEMS structure sites, and said non-active feature prevents said sense diaphragms from contacting an underlying surface during said mounting and dicing operations.
11. A method for protecting microelectromechanical systems (MEMS) structures on a MEMS wafer, said MEMS wafer including a front side having a plurality of MEMS structure sites at which said MEMS structures are located, and said method comprising
applying a non-active feature on said front side of said MEMS wafer at a perimeter of said MEMS structure sites in a scribe street of said MEMS wafer, said non-active feature having a first height above a surface of said front side of said MEMS wafer that is greater than a second height of said MEMS structures above said surface;
mounting said front side of said MEMS wafer in a dicing frame such that a back side of said MEMS wafer is exposed, said mounting operation including attaching said non-active feature to a dicing tape, said dicing tape including an adhesive layer attachable to said non-active feature, said adhesive layer having an adhesive thickness that is no greater than a difference between said first height and said second height, wherein said first height of said non-active feature prevents contact of said MEMS structures with said dicing tape during said attaching operation; and
dicing said MEMS wafer from said back side into a plurality of MEMS dies.
12. A method as claimed in claim 11 wherein said first height of said non-active feature prevents contact of said MEMS structures with said dicing tape during said dicing operation.
13. A method as claimed in claim 11 wherein said applying operation comprises:
applying a first material layer of said non-active feature on said front side of said MEMS wafer; and
applying a second material layer of said non-active feature on said first material layer to form a stacked arrangement of said first and second material layers.
14. A method for protecting microelectromechanical systems (MEMS) structures on a MEMS wafer, said MEMS wafer including a front side having a plurality of MEMS structure sites at which said MEMS structures are located, wherein said MEMS structures include pressure sensors having sense diaphragms located in said MEMS structure sites, and said method comprises:
applying a non-active feature on said front side of said MEMS wafer at a region of said MEMS wafer that is devoid of said MEMS structures, wherein said non-active feature comprises one of a polyimide film and a nitride film, and wherein said applying operation includes placing said non-active feature at a perimeter of each of said MEMS structure sites;
mounting said front side of said MEMS wafer in a dicing frame such that a back side of said MEMS wafer is exposed; and
dicing said MEMS wafer from said back side into a plurality of MEMS dies, said non-active feature preventing said sense diaphragms from contacting an underlying surface during said mounting and dicing operations.
15. A method as claimed in claim 14 wherein said non-active feature has a first height above a surface of said front side of said MEMS wafer that is greater than a second height of said MEMS structures above said surface.
16. A method as claimed in claim 14 wherein said applying operation further includes:
applying a first material layer of said non-active feature on said front side of said MEMS wafer; and
applying a second material layer of said non-active feature on said first material layer to form a stacked arrangement of said first and second material layers.