THIN SANDWICH EMBEDDED PACKAGE
Methods and systems for a thin sandwich embedded package are disclosed and may include bonding a semiconductor die to a first surface of a substrate, dispensing a bond line on the first surface of the substrate and the die, and bonding an interposer to the substrate and die using the dispensed bond line. The bond line may fill the volume between the interposer and the substrate or may fill the volume between the interposer and the die but not between the interposer and the substrate. A cavity structure may be formed on the interposer and/or substrate, wherein the die may be situated within a cavity formed by the cavity structure when the interposer is bonded to the substrate and die. The cavity structure may comprise solder resist. Contacts may be formed on the cavity structure using low volume pad finish metals to electrically couple the interposer to the substrate.
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11 . A semiconductor device comprising:
a semiconductor die bonded to a first surface of a substrate;
a bond line on the first surface of the substrate and the semiconductor die; and
an interposer bonded to the substrate and semiconductor die using the bond line.
12 . The semiconductor device according to claim 11 , wherein the bond line fills the volume between the interposer and the substrate.
13 . The semiconductor device according to claim 11 , wherein the bond line fills the volume between the interposer and the semiconductor die but not between the interposer and the substrate.
14 . The semiconductor device according to claim 11 , wherein a cavity structure is formed on one or both of the interposer and substrate, and wherein the semiconductor die is situated within a cavity formed by the cavity structure when the interposer is bonded to the substrate and semiconductor die.
15 . The semiconductor device according to claim 11 , wherein the cavity structure comprises solder resist.
16 . The semiconductor device according to claim 11 , wherein contacts formed on the cavity structure comprise low volume pad finish metals that electrically couple the interposer to the substrate.
17 . The semiconductor device according to claim 11 , wherein metal contacts on the interposer are bonded to metal contacts on the substrate.
18 . The semiconductor device according to claim 17 , wherein the metal contacts comprise solder balls and/or copper pillars.
19 . The semiconductor device according to claim 11 , wherein metal contacts formed on a second surface of the substrate are electrically coupled to metal contacts on the first surface of the substrate utilizing vias.
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21 . A semiconductor device comprising:
a semiconductor die bonded to a first surface of a first laminate structure;
a bond line on the first surface of the first laminate structure and the semiconductor die;
a second laminate structure bonded to the first laminate structure and semiconductor die using the bond line; and
a cavity structure between the first and second laminate structures, wherein the bond line and the semiconductor die are within the cavity structure.
22 . The semiconductor device according to claim 21 , wherein the bond line fills the volume between the first and second laminate structures.
23 . The semiconductor device according to claim 21 , wherein the bond line fills the volume between the second laminate structure and the semiconductor die but not between the first and second laminate structures.
24 . The semiconductor device according to claim 21 , wherein the cavity structure comprises solder resist.
25 . The semiconductor device according to claim 21 , wherein contacts formed on the cavity structure comprise low volume pad finish metals that electrically couple the second laminate structure to the first laminate structure.
26 . The semiconductor device according to claim 21 , wherein metal contacts on the second laminate structure are bonded to metal contacts on the first laminate structure.
27 . The semiconductor device according to claim 26 , wherein the metal contacts comprise solder balls.
28 . The semiconductor device according to claim 26 , wherein the metal contacts comprise copper pillars.
29 . The semiconductor device according to claim 21 , wherein metal contacts formed on a second surface of the first laminate structure are electrically coupled to metal contacts on the first surface of the first laminate structures utilizing vias.
30 . The semiconductor device according to claim 29 , wherein solder balls are formed on the metal contacts formed on the second surface of the first laminate structure.
31 . The semiconductor device according to claim 21 , wherein the cavity structure comprises solder resist material formed on both the first laminate structure and the second laminate structure