Tungsten deposition process using germanium-containing reducing agent
Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers.
1. A method of filling a feature on a substrate with tungsten, the method comprising:
prior to depositing a bulk tungsten layer, forming a tungsten nucleation layer by exposing the feature to alternating pulses of a germanium-containing reducing agent and a tungsten-containing precursor.
2. The method of claim 1 , wherein the tungsten nucleation layer is formed to a thickness between 1 nm and 20 nm.
3. The method of claim 1 , wherein the tungsten nucleation layer is formed to a thickness less than 1 nm.
4. The method of claim 1 , wherein the amount of tungsten deposited per cycle is less than about 8 Å.
5. The method of claim 1 , wherein the tungsten nucleation layer is formed in a hydrogen atmosphere.
6. The method of claim 1 , wherein substantially all of the tungsten formed in the feature comprises alpha-tungsten.
7. The method of claim 1 , wherein the germanium-containing reducing agent is germane (GeH 4 ) or digermane (Ge 2 H 6 ).
8. The method of claim 1 , further comprising depositing a bulk tungsten layer on the tungsten nucleation layer by chemical vapor deposition.
9. The method of claim 8 , wherein grain growth during the bulk tungsten layer deposition extends from a first site where tungsten nucleated to a second site where tungsten nucleated in the feature.
10. The method of claim 8 , wherein substantially all of the tungsten formed in the feature comprises alpha-tungsten.
11. A method of filling a feature on a substrate with tungsten, the method comprising:
forming a tungsten nucleation layer, and
after forming the tungsten nucleation layer and prior to depositing a tungsten bulk layer, treating the tungsten nucleation layer to pulses of a germanium-containing reducing agent.
12. The method of claim 11 , wherein no intervening pulses of other precursors are pulsed during the treatment.
13. The method of claim 11 , wherein the treatment further comprises intervening pulses of a tungsten-containing precursor, and wherein the amount of the tungsten-containing precursor pulsed during the treatment is less than the amount of the tungsten-containing precursor pulsed during the nucleation layer formation.
14. The method of claim 11 , wherein the treatment further comprises intervening pulses of a tungsten-containing precursor, wherein substantially no tungsten is deposited during the treatment.
15. The method of claim 11 , wherein the germanium-containing reducing agent is germane (GeH 4 ) or digermane (Ge 2 H 6 ).