Method of forming a HEMT semiconductor device and structure therefor
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
1. A method of forming a HEMT semiconductor device comprising:
providing a substrate;
forming a plurality of compound semiconductor layers overlying the substrate;
forming a plurality of first current carrying electrodes on a first current carrying region of the HEMT semiconductor device;
forming a plurality of second current carrying electrodes on a second current carrying region of the HEMT semiconductor device;
forming an insulator overlying the plurality of first and second current carrying electrodes;
forming plurality of first via structures having a first opening wherein each first opening extends through the insulator and is formed overlying a corresponding portion of a first current carrying electrode of the plurality of first current carrying electrodes;
forming plurality of second via structures having a second opening wherein each second opening extends through the insulator and is formed on a corresponding portion of a second current carrying electrode of the plurality of second current carrying electrodes;
plating a first conductor to overlie the insulator and to extend laterally overlying a surface of the substrate to extend into the first opening and electrically contact the plurality of first current carrying electrodes;
plating a second conductor to overlie the insulator and to extend laterally overlying the surface of the substrate to extend into the second opening and electrically contact the plurality of second current carrying electrodes;
attaching a first connector to the first conductor wherein the first connector overlies at least a portion of an active region of the HEMT semiconductor device; and
attaching a second connector to the second conductor wherein the second connector overlies at least another portion of the active region of the HEMT semiconductor device.
2. The method of claim 1 wherein plating the first and second conductors to overlie the insulator includes plating a solderable conductor to overlie the insulator.
3. The method of claim 1 wherein plating the first conductor to overlie the insulator includes plating the first conductor to be substantially planar in regions between the plurality of first via structures.
4. The method of claim 3 wherein plating the second conductor to overlie the insulator includes plating the second conductor to be substantially planar in regions between the plurality of second via structures.
5. The method of claim 1 wherein forming the insulator overlying the plurality of first and second current carrying electrodes includes forming the insulator devoid of a stiffening layer between the insulator and either of the first and second conductors including forming the insulator as one of polyimide, SOG, or BPO.
6. The method of claim 1 wherein forming the insulator overlying the plurality of first and second current carrying electrodes includes forming a polyimide layer that is devoid of a stiffening layer between the polyimide layer and either of the first and second conductors.
7. A method of singulating a HEMT semiconductor die from a semiconductor wafer comprising:
providing a semiconductor wafer having a silicon substrate;
forming a plurality of semiconductor die on portions of the silicon substrate including forming layers of compound semiconductor material overlying at least portions of the silicon substrate wherein the plurality of semiconductor die are separated from each other by singulation regions of the semiconductor wafer;
forming a first opening through the compound semiconductor material in the singulation regions of the semiconductor wafer and exposing underlying portions of the silicon substrate; and
extending the first opening through the silicon substrate exposed within the first opening thereby creating a space between the plurality of semiconductor die.
8. The method of claim 7 including forming the first opening by plasma etching layers of the compound semiconductor material with a plasma of a first chemical composition, and
wherein extending the first opening includes subsequently etching the exposed silicon substrate with a plasma of a second chemical composition.
9. The method of claim 8 including forming the first chemical composition to include a chlorine based plasma and forming the second chemical composition to include a fluorine based plasma.
10. The method of claim 7 further including forming an insulator overlying the layers of compound semiconductor material prior to forming the first opening and further including plating a first conductor overlying the insulator subsequently to forming the first opening and prior to extending the first opening through the silicon substrate.
11. The method of claim 7 further including forming an insulator overlying the layers of compound semiconductor material and plating a first conductor overlying the insulator prior to forming the first opening, and
forming the first opening through the first conductor and the insulator.
12. The method of claim 1 wherein attaching the first connector includes attaching the first connector having a portion that extends past an edge of the HEMT semiconductor device to form an electrical connection to elements external to the HEMT semiconductor device.