Compositions of neutral layer for directed self assembly block copolymers and processes thereof
View Patent ↗The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R 1 is selected from the group consisting of a C 1 -C 8 alkyl, C 1 -C 8 fluoroalkyl moiety, C 1 -C 8 partially fluorinated alkyl, C 4 -C 8 cycloalkyl, C 4 -C 8 cyclofluoroalkyl, C 4 -C 8 partially fluorinated cycloalkyl, and a C 2 -C 8 hydroxyalkyl; R 2 , R 3 and R 5 are independently selected from a group consisting of H, C 1 -C 4 alkyl, CF 3 and F; R 4 is selected from the group consisting of H, C 1 -C 8 alkyl, C 1 -C 8 partially fluorinated alkyl and C 1 -C 8 fluoroalkyl, n ranges from 1 to 5, R 6 is selected from the group consisting of H, F, C 1 -C 8 alkyl and a C 1 -C 8 fluoroalkyl and m ranges from 1 to 3.
1. A process for forming an image by graphoepitaxy comprising:
a) forming a coating of a neutral layer on a substrate;
b) heating the neutral layer to form a crosslinked neutral layer;
c) providing a coating of a photoresist layer over the crosslinked neutral layer;
d) forming a pattern in the photoresist;
e) applying a block copolymer comprising an etch resistant block and highly etchable block over the photoresist pattern and annealing until directed self assembly occurs; and,
f) etching the block copolymer, thereby removing the highly etchable block of the copolymer and forming a pattern, wherein the neutral layer comprises:
(i) at least one random copolymer of structure (I) having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)
where R 1 is selected from the group consisting of a C 1 -C 8 alkyl, C 1 -C 8 fluoroalkyl, C 1 -C 8 partially fluorinated alkyl moiety, C 4 -C 8 cycloalkyl, C 4 -C 8 cyclofluoroalkyl, C 4 -C 8 partially fluorinated cycloalkyl, and a C 2 -C 8 hydroxyalkyl; R 2 , R 3 and R 5 are independently selected from a group consisting of H, C 1 -C 4 alkyl, CF 3 and F; R 4 is selected from the group consisting of H, C 1 -C 8 alkyl, C 1 -C 8 partially fluorinated alkyl moiety and C 1 -C 8 fluoroalkyl, n ranges from 1 to 5, R 6 is selected from the group consisting of H, F, C 1 -C 8 alkyl and a C 1 -C 8 fluoroalkyl and m ranges from 1 to 3, and
wherein the neutral layer has unit 1 ranging from about 20 mole % to about 80 mole %; unit 2 ranging from about 20 mole % to about 80 mole % and unit 3 ranging from about 15 mole % to about 45 mole %.
2. The process of claim 1 where the photoresist pattern is formed by imaging lithography selected from a group consisting of e-beam, broadband, 193 nm immersion lithography, and radiation where the wavelength is selected from the group consisting of 13.5 nm, 193 nm, 248 nm, 365 nm and 436 nm.
3. The process of claim 1 , where the photoresist is a positive or negative tone developable photoresist.
4. A process for forming an image by chemoepitaxy comprising:
a) forming a coating of a neutral layer on a substrate;
b) heating the neutral layer to form a crosslinked neutral layer;
c) providing a coating of a photoresist layer over the crosslinked neutral layer;
d) forming a pattern in the photoresist layer to remove the unexposed photoresist, thereby forming an uncovered crosslinked neutral layer region;
e) treating the uncovered crosslinked neutral layer region,
f) removing the photoresist,
g) applying a block copolymer comprising an etch resistant block and highly etchable block over the neutral layer and annealing until directed self assembly occurs; and,
h) etching the block copolymer, thereby removing the highly etchable block of the copolymer and forming a pattern, wherein the neutral layer comprises:
(i) at least one random copolymer of structure (I) having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)
where R 1 is selected from the group consisting of a C 1 -C 8 alkyl, C 1 -C 8 fluoroalkyl, C 1 -C 8 partially fluorinated alkyl moiety, C 4 -C 8 cycloalkyl, C 4 -C 8 cyclofluoroalkyl, C 4 -C 8 partially fluorinated cycloalkyl, and a C 2 -C 8 hydroxyalkyl; R 2 , R 3 and R 5 are independently selected from a group consisting of H, C 1 -C 4 alkyl, CF 3 and F; R 4 is selected from the group consisting of H, C 1 -C 8 alkyl, C 1 -C 8 partially fluorinated alkyl moiety and C 1 -C 8 fluoroalkyl, n ranges from 1 to 5, R 6 is selected from the group consisting of H, F, C 1 -C 8 alkyl and a C 1 -C 8 fluoroalkyl and m ranges from 1 to 3, and
wherein the neutral layer has unit 1 ranging from about 20 mole % to about 80 mole %; unit 2 ranging from about 20 mole % to about 80 mole % and unit 3 ranging from about 15 mole % to about 45 mole %.
5. The process of claim 4 where the photoresist pattern is formed by imaging lithography selected from a group consisting of e-beam, 193 nm immersion lithography, broadband, and radiation wherein the wavelength is selected from the group consisting of 13.5 nm, 193 nm, 248 nm, 365 nm and 436 nm.
6. The process of claim 4 , where the photoresist is a negative or positive tone developable photoresist.
7. A process for forming an image by chemoepitaxy comprising:
a) forming a coating of a neutral layer on a substrate;
b) heating the neutral layer to form a crosslinked neutral layer;
c) providing a coating of a photoresist layer over the crosslinked neutral layer;
d) forming a pattern in the photoresist layer;
e) applying a block copolymer comprising an etch resistant block and highly etchable block over the photoresist pattern and annealing until directed self assembly occurs; and,
f) etching the block copolymer with a plasma, thereby removing the highly etchable block of the copolymer and forming a pattern, wherein the neutral layer comprises:
(i) at least one random copolymer of structure (I) having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)
where R 1 is selected from the group consisting of a C 1 -C 8 alkyl, C 1 -C 8 fluoroalkyl, C 1 -C 8 partially fluorinated alkyl moiety, C 4 -C 8 cycloalkyl, C 4 -C 8 cyclofluoroalkyl, C 4 -C 8 partially fluorinated cycloalkyl, and a C 2 -C 8 hydroxyalkyl; R 2 , R 3 and R 5 are independently selected from a group consisting of H, C 1 -C 4 alkyl, CF 3 and F; R 4 is selected from the group consisting of H, C 1 -C 8 alkyl, C 1 -C 8 partially fluorinated alkyl moiety and C 1 -C 8 fluoroalkyl, n ranges from 1 to 5, R 6 is selected from the group consisting of H, F, C 1 -C 8 alkyl and a C 1 -C 8 fluoroalkyl and m ranges from 1 to 3, and
wherein the neutral layer has unit 1 ranging from about 20 mole % to about 80 mole %; unit 2 ranging from about 20 mole % to about 80 mole % and unit 3 ranging from about 15 mole % to about 45 mole %.
8. The process of claim 7 where the photoresist pattern is formed by imaging lithography selected from a group consisting of e-beam, broadband, 193 nm immersion lithography, and radiation wherein the wavelength is selected from the group consisting of 13.5 nm, 193 nm, 248 nm, 365 nm and 436 nm.
9. The process of claim 7 , where the photoresist is a negative or positive photoresist.