NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHING MATERIAL
A nonvolatile memory cell is provided that includes a diode and a reversible resistance-switching element that includes a resistance-switching metal oxide or nitride, the metal oxide or nitride including only one metal. Numerous other aspects are provided.
1 . A nonvolatile memory cell comprising:
a diode; and
a reversible resistance-switching element comprising a resistance-switching metal oxide or nitride, the metal oxide or nitride comprising only one metal.
2 . The nonvolatile memory cell of claim 1 , wherein the metal oxide or nitride comprises one or more of Ni x O y , Nb x O y , Ti x O y , Hf x O y , Al x O y , Mg x O y , Co x O y , Cr x O y , V x O y , Zn x O y , Zr x O y , B x N y , and Al x N y .
3 . The nonvolatile memory cell of claim 1 , wherein the metal oxide or nitride comprises one or more of NiO, Nb 2 O 5 , TiO 2 , HfO 2 , Al 2 O 3 , MgO x , CrO 2 , VO, BN, and AlN.
4 . The nonvolatile memory cell of claim 1 , wherein the diode and the reversible resistance-switching element are coupled in series.
5 . The nonvolatile memory cell of claim 1 , wherein the diode is above or below the reversible resistance-switching element.
6 . The nonvolatile memory cell of claim 1 , wherein the diode comprises a vertically oriented pillar.
7 . The nonvolatile memory cell of claim 1 , wherein the diode comprises a semiconductor junction diode.
8 . The nonvolatile memory cell of claim 7 , wherein the semiconductor junction diode is vertically oriented, comprising a bottom heavily doped region having a first conductivity type, a middle intrinsic or lightly doped region, and a top heavily doped region having a second conductivity type.
9 . The nonvolatile memory cell of claim 1 , wherein the reversible resistance-switching element comprises a pillar.
10 . The nonvolatile memory cell of claim 1 , wherein the memory cell comprises a first memory level.
11 . The nonvolatile memory cell of claim 10 , wherein the first memory level is formed above a monocrystalline silicon substrate.
12 . The nonvolatile memory cell of claim 10 , wherein at least a second memory level is monolithically formed above the first memory level.
13 . The nonvolatile memory cell of claim 1 , wherein the memory cell is rewriteable.
14 . The nonvolatile memory cell of claim 1 , wherein the diode and the reversible resistance-switching element are disposed between a first conductor and a second conductor.
15 . The nonvolatile memory cell of claim 14 , wherein the second conductor is above the first conductor, and the diode and the resistance-switching element are vertically disposed between them.
16 . The nonvolatile memory cell of claim 14 , wherein the first conductor and the second conductor are rail-shaped.
17 . The nonvolatile memory cell of claim 9 , wherein the first conductor extends in a first direction and the second conductor extends in a second direction different from the first direction.
18 . A monolithic three-dimensional memory array comprising the nonvolatile memory cell of claim 1 .
19 . A monolithic three-dimensional memory array comprising a first memory level comprising a plurality of the nonvolatile memory cells of claim 1 .
20 . A monolithic three-dimensional memory array comprising:
a first memory level comprising a plurality of the nonvolatile memory cells of claim 1 ; and
a second memory level comprising a plurality of the nonvolatile memory cells of claim 1 , the second memory level disposed above the first memory level.