Mask that provides improved focus control using orthogonal edges
A method includes selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography. First locations are identified in the desired pattern, the first locations being those which would produce on the wafer images impacted by phase distortions of actinic light through openings in the desired pattern. Second locations in the desired pattern are identified for the insertion of orthoedges. The orthoedges are provided to contribute an additional amplitude of actinic light to the images impacted by phase distortions when the actinic light is projected onto the wafer. The orthoedges are then inserted into the desired pattern at the second locations at orientations such that the orthoedges provide a quadrature component to the additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing the phase distortions. Finally, the mask blank is formed lithographically with the desired pattern modified through the insertion of the orthoedges.
1. A method comprising:
selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography;
identifying first locations in said desired pattern, said first locations being those which would produce on said wafer images impacted by phase distortions of actinic light through openings in said desired pattern;
identifying second locations in said desired pattern for the insertion of orthoedges, said orthoedges being provided to contribute an additional amplitude of actinic light to said images impacted by phase distortions when said actinic light is projected onto said wafer;
inserting said orthoedges into said desired pattern at said second locations at orientations such that said orthoedges provide a quadrature component to said additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing said phase distortions; and
forming said mask blank lithographically with said desired pattern modified through the insertion of said orthoedges.
2. The method as claimed in claim 1 , wherein the desired pattern includes an integrated circuit (IC) pattern.
3. The method as claimed in claim 1 , wherein the desired pattern includes Sub-Resolution Assist Features (SRAFs), said SRAFs not producing printed images when said desired pattern is projected onto a wafer by actinic light.
4. The method as claimed in claim 3 , wherein said orthoedges are included in said SRAFs.
5. The method as claimed in claim 4 , wherein said SRAFs are elongated openings running adjacent and parallel to said main features of said desired pattern, and wherein said orthoedges extend across said SRAFs.
6. The method as claimed in claim 1 , wherein said orthoedges are in said main features of said desired pattern.
7. The method as claimed in claim 1 , wherein said phase distortions are induced by transmission of actinic light through said openings in said desired pattern.
8. The method as claimed in claim 1 , wherein said openings are subwavelength in size.
9. The method as claimed in claim 1 , wherein said orthoedges are designed to act with a globally scoped lens aberration aimed at EMF-mitigation.
10. The method as claimed in claim 1 , wherein said orthoedges are designed to influence the depth within a photoresist film at which actinic light will focus.
11. An apparatus comprising:
one or more processors; and
one or more memories including computer program code, the one or more memories and the computer program code configured, with the one or more processors, to cause the apparatus to perform at least the following:
selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography;
identifying first locations in said desired pattern, said first locations being those which would produce on said wafer images impacted by phase distortions of actinic light through openings in said desired pattern;
identifying second locations in said desired pattern for the insertion of orthoedges, said orthoedges being provided to contribute an additional amplitude of actinic light to said images impacted by phase distortions when said actinic light is projected onto said wafer;
inserting said orthoedges into said desired pattern at said second locations at orientations such that said orthoedges provide a quadrature component to said additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing said phase distortions; and
forming said mask blank lithographically with said desired pattern modified through the insertion of said orthoedges.
12. The apparatus as claimed in claim 11 , wherein the desired pattern includes an integrated circuit (IC) pattern.
13. The apparatus as claimed in claim 11 , wherein the desired pattern includes Sub-Resolution Assist Features (SRAFs), said SRAFs not producing printed images when said desired pattern is projected onto a wafer by actinic light.
14. The apparatus as claimed in claim 13 , wherein said orthoedges are included in said SRAFs.
15. The apparatus as claimed in claim 14 , wherein said SRAFs are elongated openings running adjacent and parallel to said main features of said desired pattern, and wherein said orthoedges extend across said SRAFs.
16. The apparatus as claimed in claim 11 , wherein said orthoedges are in said main features of said desired pattern.
17. The apparatus as claimed in claim 11 , wherein said phase distortions are induced by transmission of actinic light through said openings in said desired pattern.
18. The apparatus as claimed in claim 11 , wherein said openings are subwavelength in size.
19. The apparatus as claimed in claim 11 , wherein said orthoedges are designed to act with a globally scoped lens aberration aimed at EMF-mitigation.
20. The apparatus as claimed in claim 11 , wherein said orthoedges are designed to influence the depth within a photoresist film at which actinic light will focus.
21. A computer program product comprising a computer-readable storage medium bearing computer program code embodied therein for use with a computer, the computer program code comprising code for performing at least the following:
selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography;
identifying first locations in said desired pattern, said first locations being those which would produce on said wafer images impacted by phase distortions of actinic light through openings in said desired pattern;
identifying second locations in said desired pattern for the insertion of orthoedges, said orthoedges being provided to contribute an additional amplitude of actinic light to said images impacted by phase distortions when said actinic light is projected onto said wafer;
inserting said orthoedges into said desired pattern at said second locations at orientations such that said orthoedges provide a quadrature component to said additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing said phase distortions; and
forming said mask blank lithographically with said desired pattern modified through the insertion of said orthoedges.
22. The computer program product as claimed in claim 21 , wherein the desired pattern includes an integrated circuit (IC) pattern.
23. The computer program product as claimed in claim 21 , wherein the desired pattern includes Sub-Resolution Assist Features (SRAFs), said SRAFs not producing printed images when said desired pattern is projected onto a wafer by actinic light.
24. The computer program product as claimed in claim 23 , wherein said orthoedges are included in said SRAFs.
25. The computer program product as claimed in claim 24 , wherein said SRAFs are elongated openings running adjacent and parallel to said main features of said desired pattern, and wherein said orthoedges extend across said SRAFs.
26. The computer program product as claimed in claim 21 , wherein said orthoedges are in said main features of said desired pattern.
27. The computer program product as claimed in claim 21 , wherein said phase distortions are induced by transmission of actinic light through said openings in said desired pattern.
28. The computer program product as claimed in claim 21 , wherein said openings are subwavelength in size.
29. The computer program product as claimed in claim 21 , wherein said orthoedges are designed to act with a globally scoped lens aberration aimed at EMF-mitigation.
30. The computer program product as claimed in claim 21 , wherein said orthoedges are designed to influence the depth within a photoresist film at which actinic light will focus.
31. A mask for use in lithographically forming a desired pattern of main features on a wafer by projection lithography, said mask comprising:
a plurality of main features in the form of openings through which actinic light is directed during projection lithography, said openings having a plurality of first locations producing on said wafer images impacted by phase distortions of said actinic light,
said openings further having a plurality of second locations with orthoedges, said orthoedges being provided to contribute an additional amplitude of actinic light to said images impacted by phase distortions, said orthoedges being at orientations providing a quadrature component to said additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing said phase distortions.
32. The mask as claimed in claim 31 , wherein the desired pattern includes an integrated circuit (IC) pattern.
33. The mask as claimed in claim 31 , wherein the desired pattern includes Sub-Resolution Assist Features (SRAFs), said SRAFs not producing printed images when said desired pattern is projected onto a wafer by actinic light.
34. The mask as claimed in claim 33 , wherein said orthoedges are included in said SRAFs.
35. The mask as claimed in claim 34 , wherein said SRAFs are elongated openings running adjacent and parallel to said main features of said desired pattern, and wherein said orthoedges extend across said SRAFs.
36. The mask as claimed in claim 31 , wherein said orthoedges are in said main features of said desired pattern.
37. The mask as claimed in claim 31 , wherein said phase distortions are induced by transmission of actinic light through said openings in said desired pattern.
38. The mask as claimed in claim 31 , wherein said openings are subwavelength in size.
39. The mask as claimed in claim 31 , wherein said orthoedges are designed to act with a globally scoped lens aberration aimed at EMF-mitigation.
40. The mask as claimed in claim 31 , wherein said orthoedges are designed to influence the depth within a photoresist film at which actinic light will focus.