Method and apparatus for manufacturing three-dimensional-structure memory device
Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , and Si 4 H 10 , to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , and dichloro silane (SiCl 2 H 2 ), and ammonia-based gas, to deposit a silicon nitride layer.
1. An apparatus for manufacturing a memory device having a 3-dimensional structure, the apparatus comprising:
a chamber in which a substrate is processed;
a substrate support disposed in the chamber, supporting the substrate, and vertically moving between a release position where the substrate is allowed to be introduced to and discharged from the chamber, and a process position where the substrate is processed; and
an edge ring disposed over the substrate when the substrate support is disposed in the release position, and including a pressing surface pressing an edge of the substrate placed on the substrate support when the substrate support is disposed in the process position,
wherein the substrate support has a ring-shaped edge surrounding the substrate,
wherein the edge ring comprises:
a support disposed over the edge of the substrate support;
a pressing part extending from the support toward the edge of the substrate, and including the pressing surface; and
a vertical support extending downward from the support and surrounding the substrate support, the vertical support contacting a side surface of a fixing protrusion disposed on a side wall of the chamber when the substrate support is in the release position, the vertical support having an inner surface that tapers radially from top to bottom, the inner surface of the vertical support facing an outer circumferential surface of the substrate support when the substrate support is moved to the process position,
wherein the edge ring is supported by the substrate only through the pressing part and the edge ring other than the pressing part is apart from the substrate and the substrate support, and
wherein an upper surface of the ring-shaped edge of the substrate support is disposed at a level higher than a level at which a lower surface of the substrate is disposed.
2. The apparatus of claim 1 , wherein the edge of the substrate has a width ranging from about 0.5 mm to about 3 mm inward from a boundary of the substrate.
3. The apparatus of claim 1 , wherein the edge ring is formed of ceramic.
4. The apparatus of claim 1 , wherein the edge ring further comprises:
a horizontal support extending from the support toward the side wall of the chamber, and placed on a top surface of the fixing protrusion disposed on the side wall of the chamber when the substrate support is disposed in the release position.
5. The apparatus of claim 1 , further comprising:
a shower head that supplies the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , and Si 4 H 10 when the dielectric layers are stacked on the substrate, and that supplies the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , and dichloro silane (SiCl 2 H 2 ), and ammonia-based gas when the sacrificial layers are stacked on the substrate.
6. The apparatus of claim 1 , further comprising:
a shower head that supplies the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , and Si 4 H 10 when the dielectric layers are stacked on the substrate, and that supplies the substrate with one or more gases selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , and dichloro silane (SiCl 2 H 2 ), ammonia-based gas, and one or more gases selected from the group consisting of B2H6 and PH3 when the sacrificial layers are stacked on the substrate.
7. The apparatus of claim 1 , wherein an entire lower surface of the support of the edge ring is disposed at a level higher than a level at which an upper surface of the substrate support is disposed.
8. The apparatus of claim 1 , wherein only the pressing surface of the edge ring comes in contact with the substrate.
9. The apparatus of claim 8 , wherein the pressing surface comes in contact with only a top surface of the substrate.