Application of relaxation voltage pulses to programmble impedance elements during read operations

1. An integrated circuit (IC) device, comprising:

a plurality of memory cells each including an access device and a two terminal, programmable impedance element, each element programmable to a first of a plurality of impedance states by application of a first voltage across its terminals; and

a circuit configured to read a data value stored by an element of a memory cell by application of at least one read voltage pulse and at least one relaxation voltage pulse across the terminals of the element; wherein

the read voltage pulse has a same polarity but a smaller magnitude than the first voltage, the relaxation voltage pulse has a different polarity than the read voltage pulse and the first voltage, and neither the read or relaxation voltage pulses program the element to a particular impedance state.

2. The IC device of claim 1 , wherein:

the circuit is configured to apply the relaxation voltage pulse to the element after the read voltage pulse has been applied to the element when reading the data value stored by the element.

3. The IC device of claim 1 , wherein:

the circuit is configured to apply the relaxation voltage pulse to the element before the read voltage pulse has been applied to the element when reading the data value stored by the element.

4. The IC device of claim 1 , wherein:

each memory cell includes the access device having a controllable impedance path coupled between a bit line and a first terminal of its programmable impedance element, and a control terminal that receives a control signal; and

the circuit includes an element switch circuit that selectively applies a read voltage or relaxation voltage to the second terminal of the programmable impedance element; wherein

the read voltage pulse is generated by application of at least the read voltage and the relaxation voltage pulse is generated by application of at least the relaxation voltage.

5. The IC device of claim 1 , wherein:

each memory cell includes the access device having a controllable impedance path coupled between a bit line and a first terminal of its programmable impedance element, and a control terminal that receives a control signal; and

the circuit includes a bit line switch circuit that selectively applies a relaxation voltage to the bit line of the cell from which data is being read; wherein

the relaxation voltage pulse is generated by application of at least the relaxation voltage to the bit line.

6. The IC device of claim 1 , wherein:

each memory cell includes the access device having a controllable impedance path coupled between a bit line and a first terminal of its programmable impedance element, and a control terminal that receives a control signal; and

the read voltage pulse and relaxation voltage pulse are generated by activation of at least the control signal.

7. The IC device of claim 1 , wherein:

the circuit includes

a read circuit configured to detect a data value stored by the element, and

a conditional switch circuit configured to enable application of the relaxation voltage pulse when the detected data value is one value, and to prevent the application of the relaxation voltage pulse when the detected data value is another value.

8. The IC device of claim 1 , wherein:

the elements comprise programmable resistance elements that include a solid ion conductor.

9. A method of reading a data value from a memory cell that includes a two terminal programmable impedance element, comprising:

accessing one of a plurality of memory cells by enabling an access device of the memory cell to couple its programmable impedance element to a bit line, the programmable impedance element programmable to a first of a plurality of impedance states by application of a program voltage across its terminals;

applying at least one read voltage pulse to the element;

applying at least one relaxation pulse to the element; wherein

the read voltage pulse has a same polarity but a smaller magnitude than the program voltage, the relaxation voltage pulse has a different polarity than the read voltage pulse and the program voltage, and neither the read or relaxation voltage pulses program the element to a particular impedance state.

10. The method of claim 9 , wherein:

each element is coupled to the access device of its memory cell at a first terminal;

applying the at least one read voltage pulse includes applying a read voltage to a second terminal of the element; and

applying the at least one relaxation voltage pulse includes applying a relaxation voltage to the second terminal of the element.

11. The method of claim 9 , wherein:

the element is coupled to its access device at a first terminal; and

applying the at least one relaxation voltage pulse includes applying the relaxation voltage pulse between the bit line of and a second terminal of the element.

12. The method of claim 9 , wherein:

the at least one read voltage pulse is applied prior to the at least one relaxation voltage pulse.

13. The method of claim 9 , wherein:

the at least one read voltage pulse is applied after the at least one relaxation voltage pulse.

14. The method of claim 9 , wherein:

the element comprises a programmable resistance element that includes a solid ion conductor.

15. A method, comprising:

applying at least one read voltage pulse to a programmable impedance element in a read operation to determine an impedance state of the element; and

applying at least one relaxation voltage pulse to the same programmable impedance element in the same read operation having a polarity opposite to that of the read voltage pulse; wherein

the programmable impedance element is programmable to a first of a plurality of impedance states by application of a program voltage across its terminals; wherein

the read voltage pulse has the same polarity but a smaller magnitude than the program voltage.

16. The method of claim 15 , further including:

enabling an active device coupled to the element throughout both the at least one read voltage pulse and the at least one relaxation voltage pulse.

17. The method of claim 15 , further including:

enabling an active device coupled to the element part way through one selected from: the read voltage pulse and the relaxation voltage pulse.

18. The method of claim 15 , wherein:

the at least one read voltage pulse is applied prior to the at least one relaxation voltage pulse in the read operation.

19. The method of claim 15 , wherein:

the at least one read voltage pulse is applied after the at least one relaxation voltage pulse in the read operation.

20. The method of claim 15 , wherein:

the element comprises a programmable resistance element that includes a solid ion conductor.