Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
View Patent ↗A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.
1. A method of manufacturing a semiconductor device, comprising:
forming an oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
supplying a precursor gas to the substrate; and
supplying an ozone gas to the substrate,
wherein in the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and
in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.
2. The method of claim 1 , wherein each of the act of supplying the precursor gas and the act of supplying the ozone gas is performed under a non-plasma atmosphere.
3. The method of claim 1 , wherein the precursor gas contains a predetermined element and carbon bonded to the predetermined element, and
in the act of forming the oxide film, an oxide film containing the predetermined element and carbon is formed.
4. The method of claim 1 , wherein the precursor gas comprises at least one selected from the group consisting of a gas containing silicon and a halogen element, a gas containing silicon, carbon and nitrogen and having an Si—N bonding, and a gas containing silicon, carbon and a halogen element and having an Si—C bonding.
5. The method of claim 4 , wherein the gas containing silicon, carbon and the halogen element and having the Si—C bonding comprises at least one selected from the group consisting of an alkyl group and an alkylene group.
6. The method of claim 5 , wherein the gas containing the alkylene group has at least one selected from the group consisting of an Si—C—Si bonding and an Si—C—C—Si bonding.
7. The method of claim 1 , wherein the precursor gas has at least one selected from the group consisting of an Si—C—Si bonding and an Si—C—C—Si bonding.
8. The method of claim 1 , wherein the precursor gas comprises a gas containing silicon, carbon and a halogen element and having an Si—C bonding.
9. The method of claim 1 , wherein the amine-based catalytic gas comprises at least one selected from the group consisting of triethylamine gas, diethylamine gas, monoethylamine gas, trimethylamine gas, monomethylamine gas, pyridine gas and piperidine gas.
10. The method of claim 1 , wherein the amine-based catalytic gas comprises at least one selected from the group consisting of triethylamine gas, pyridine gas and piperidine gas.
11. The method of claim 1 , wherein the amine-based catalytic gas comprises triethylamine gas.
12. The method of claim 1 , wherein a composition of the oxide film is controlled by adjusting a supply amount of the amine-based catalytic gas supplied in the act of supplying the ozone gas.
13. The method of claim 1 , wherein a composition of the oxide film is controlled by adjusting a ratio of a flow rate of the amine-based catalytic gas to a total flow rate of the ozone gas and the amine-based catalytic gas supplied in the act of supplying the ozone gas.
14. The method of claim 1 , wherein the act of forming the oxide film is performed in a state where the substrate is accommodated in a process chamber, and
a composition of the oxide film is controlled by adjusting a partial pressure of the amine-based catalytic gas, in the process chamber, supplied in the act of supplying the ozone gas.
15. The method of claim 1 , wherein in the act of supplying the ozone gas, a composition of the oxide film is controlled by selecting and supplying a specific amine-based catalytic gas as the amine-based catalytic gas among a plurality of types of amine-based catalytic gases having different molecular structures.
16. The method of claim 1 , wherein in the act of supplying the ozone gas, a composition of the oxide film is controlled by selecting a specific supply line among a plurality of supply lines configured to respectively supply a plurality of types of amine-based catalytic gases having different molecular structures and supplying a specific amine-based catalytic gas through the specific supply line.
17. The method of claim 1 , wherein in the act of forming the oxide film, the cycle is performed a plurality number of times, and
a composition in the oxide film is changed in a film thickness direction by changing a supply amount of the amine-based catalytic gas supplied in the act of supplying the ozone gas while the cycle is performed the plurality number of times.
18. The method of claim 1 , wherein in each of the act of supplying the precursor gas and the act of supplying the ozone gas, a temperature of the substrate is set to fall within a range of room temperature or greater and 200 degrees C. or less.
19. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming an oxide film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:
supplying a precursor gas to the substrate in the process chamber; and
supplying an ozone gas to the substrate in the process chamber,
wherein in the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and
in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.