IP Library Granted Patent US 9,587,884
Granted Patent B2
US 9,587,884 · App. 14/223,367 · Granted Mar 7, 2017

Insulation structure and method of manufacturing semiconductor device

Inventors: Tetsuya Kosugi (Toyama, JP); Motoya Takewaki (Toyama, JP); Hitoshi Murata (Toyama, JP); Masaaki Ueno (Toyama, JP)
Assignee: HITACHI KOKUSAI ELECTRIC INC.
F27D9/00F27B17/0025
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Quick Facts
Patent No.
US 9,587,884
App. No.
14/223,367
Granted
Mar 7, 2017
Kind
B2
Abstract

A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.

Claims (40)

1. A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, the heat insulation structure comprising:

a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part;

a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer;

a space provided in an inner side of the side wall inner layer;

a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space;

a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and

a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.

2. The heat insulation structure according to claim 1 , wherein the throttle part includes a plurality of throttle parts equally disposed in a circumferential direction.

3. The heat insulation structure according to claim 1 , wherein a plurality of partition walls is provided between the side wall outer layer and the side wall inner layer in a circumferential direction, and reduces a cross-sectional area of a plurality of cooling gas passages partitioned by the plurality of partition walls.

4. The heat insulation structure according to claim 3 , wherein a cross-sectional area of the throttle part is formed to be smaller than a cross-sectional area of each of the plurality of cooling gas passages.

5. The heat insulation structure according to claim 1 , wherein the throttle part includes at least two throttle parts provided in a vertical direction.

6. The heat insulation structure according to claim 5 , wherein the throttle part includes a first throttle part and a second throttle part, and a cross-sectional area of the first throttle part is smaller than a cross-sectional area of the second throttle part.

7. The heat insulation structure according to claim 6 , wherein the first throttle part is provided above a blowout hole disposed at the top, and the second throttle part is provided below a blowout hole disposed at the bottom.

8. The heat insulation structure according to claim 1 , wherein a cooling gas outlet port is provided in a lower portion of a side wall outer layer disposed in an outer side of a plurality of layers of the side wall part, and a second throttle part is provided in a boundary between the cooling gas outlet port and the cooling gas passage and reduces a cross-sectional area of the cooling gas outlet port.

9. The heat insulation structure according to claim 1 , wherein a valve is provided in the vicinity of at least each throttle part, and the valve is opened and closed according to a temperature control state or mode.

10. The heat insulation structure according to claim 1 , wherein a buffer area is provided to distribute cooling gas flowing through the cooling gas passage.

11. The heat insulation structure according to claim 1 , wherein an exhaust fan is provided to exhaust cooling gas flowing through the cooling gas passage.

12. A heating device comprising:

a heat insulation structure of claim 1 ; and

a heat generation part.

13. A substrate processing apparatus comprising:

a heating device of claim 12 .

14. A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, the heat insulation structure comprising:

a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part;

a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer;

a cooling gas outlet port provided in a lower portion of the side wall outer layer disposed in the outer side of the side wall part;

a buffer area provided on both ends of the cooling gas passage; and

a throttle part configured to reduce a cross-sectional area of a boundary surface disposed in a boundary between the buffer area and the cooling gas passage.

15. The heat insulation structure according to claim 14 , wherein a plurality of partition walls is provided between the side wall outer layer and the side wall inner layer in a circumferential direction, and reduces a cross-sectional area of a plurality of cooling gas passages partitioned by the plurality of partition walls.

16. The heat insulation structure according to claim 15 , wherein a cross-sectional area of the throttle part is smaller than a cross-sectional area of each of the plurality of cooling gas passages.

17. The heat insulation structure according to claim 16 , wherein the first throttle part is provided above a blowout hole disposed at the top, and the second throttle part is provided below a blowout hole disposed at the bottom.

18. A heating device comprising:

a heat insulation structure of claim 14 ; and

a heat generation part.

19. A substrate processing apparatus comprising:

a heating device of claim 18 .

20. A method for manufacturing a semiconductor device, comprising:

loading a substrate into a reaction tube;

processing the substrate inside the reaction tube; and,

after the processing, cooling the reaction tube disposed in a space provided in an inner side of the side wall inner layer, by distributing cooling gas, the cooling gas being supplied from a cooling gas supply port disposed in an upper portion of a side wall outer layer disposed in an outer side of a side wall part of a heat insulation structure having the cylindrical side wall part formed in a multilayer structure, from a plurality of blowout holes to the space provided in the inner side of the side wall inner layer, through a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer, a buffer area continuously provided in the cooling gas supply port and the cooling gas passage, and a throttle part configured to reduce a cross-sectional area of a boundary surface disposed in a boundary between the buffer area and the cooling gas passage.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 047995/0490 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2014
From: KOSUGI, TETSUYA; TAKEWAKI, MOTOYA; MURATA, HITOSHI; UENO, MASAAKI
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 032517/0054 →
Priority Claims (2)
JP 2013-061682 · Mar 25, 2013 · national
JP 2014-031545 · Feb 21, 2014 · national
Continuity (1)
Related Publication 20140287375A1 · Sep 25, 2014