Semiconductor device including merged-unmerged work function metal and variable fin pitch
View Patent ↗A semiconductor device includes a plurality of first semiconductor fins formed on a semiconductor substrate to define first fin trenches. At least one second semiconductor fin is formed on the semiconductor substrate to define second fin trenches. A first work function metal layer is formed in the first and second fin trenches. The first work function metal layer formed in the second trenches has a first cavity formed therein such that the at least one second semiconductor fin realizes a different concentration of the first work function metal layer with respect to the plurality of first semiconductor fins.
1. A semiconductor device, comprising:
a plurality of first semiconductor fins formed on a semiconductor substrate and separated from one another according to a first fin pitch to define corresponding first fin trenches having a first width;
at least one second semiconductor fin formed on the semiconductor substrate and separated from the plurality of first semiconductor fins by a second fin pitch to define corresponding second fin trenches having a second width that is different than the first width; and
a first work function metal layer formed in the first and second fin trenches, the first work function metal layer formed in the second trenches having a first cavity formed therein such that the at least one second semiconductor fin realizes a different concentration of the first work function metal layer with respect to the plurality of first semiconductor fins.
2. The semiconductor device of claim 1 , wherein the first work function metal layer has a second cavity formed in at least one of the first fin trenches.
3. The semiconductor device of claim 2 , wherein second fin trenches have a second width that is greater than the first width such that the first cavity extends a first depth and the second cavity extends a second depth that is less than the first depth.
4. The semiconductor device of claim 3 , further comprising a second work function metal layer that is formed on the first work function metal layer and that fills the first and second cavities.
5. The semiconductor device of claim 4 , wherein an amount of the second work function metal layer surrounding the at least one second semiconductor fin is greater than an amount of the second work function metal layer surrounding at least one semiconductor fin among the plurality of first semiconductor fins.
6. The semiconductor device of claim 5 , wherein a combination of the first and second work function metal layers surrounding the plurality of first semiconductor fins defines a first threshold voltage and a combination of the first and second work function metal layers surrounding the at least one second semiconductor fin defines a second threshold voltage different from the first threshold voltage.
7. The semiconductor device of claim 6 , wherein the first work function metal layer is formed from titanium nitride (TiN) and the second work function metal layer is formed from titanium carbide (TiC).
8. The semiconductor device of claim 7 , wherein an oxide layer is interposed between each semiconductor fin and the first work function metal layer.
9. A semiconductor device, comprising:
a plurality of first semiconductor fins formed on a semiconductor substrate and separated from one another by first fin trenches having a first width;
at least one second semiconductor fin formed on the semiconductor substrate and separated from the plurality of first semiconductor fins by a second fin trench having a second width that is greater than the first width;
a first work function metal layer formed in the first and second fin trenches; and
a second work function metal layer formed on the first work function metal layer such that a first combination of first and second work function metal layers surrounding the plurality of first semiconductor fins defines a first threshold voltage and a second combination between the first and second work function metal layers surrounding the at least one second semiconductor fin defines a second threshold voltage different than the first threshold voltage.
10. The semiconductor device of claim 9 , wherein the first combination defines a first thickness differential between first and second work function metal layers and the second combination defines a second thickness differential between first and second work function metal layers that is different than the first thickness differential.
11. The semiconductor device of claim 10 , wherein the thickness of the second work function metal surrounding the at least one second semiconductor fin is greater than the thickness of the first work function metal surrounding the at least one second semiconductor fin.
12. The semiconductor device of claim 11 , wherein the thickness of the first work function metal surrounding at least one fin among the plurality of first semiconductor fins is greater than the thickness of the second work function metal surrounding the at least one fin.
13. The semiconductor device of claim 12 , wherein each fin among plurality of first semiconductor fins is separated from one another according to a first fin pitch, and wherein the at least one second semiconductor fin is separated from plurality of first semiconductor fins according to a second fin pitch that is different from the first fin pitch.
14. The semiconductor device of claim 13 , wherein the first work function metal layer is formed from titanium nitride (TiN) and the second work function metal layer is formed from titanium carbide (TiC).
15. The semiconductor device of 14 , wherein an oxide layer is interposed between each semiconductor fin and the first work function metal layer.
16. A method of fabricating a semiconductor device, the method comprising:
forming a plurality of first semiconductor fins on a semiconductor substrate, the first semiconductor fins separated from one another according to a first fin pitch that defines corresponding first fin trenches having a first width;
forming at least one second semiconductor fin formed on the semiconductor substrate, the at least one second semiconductor fin separated from the plurality of first semiconductor fins according to a second fin pitch that defines corresponding second fin trenches having a second width that is different from the first width; and
forming a first work function metal layer in the first and second fin trenches, the first work function metal layer formed in the second trenches having a first cavity formed therein such that the at least one second semiconductor fin realizes a different concentration of the first work function metal layer with respect to the plurality of first semiconductor fins.
17. The semiconductor device of claim 16 , wherein the forming a first work function metal layer includes forming a second cavity in at least one of the first fin trenches.
18. The semiconductor device of claim 17 , wherein the forming a first work function metal layer includes extending the first cavity at a first depth and extending the second cavity a second depth that is less than the first depth.
19. The semiconductor device of claim 18 , further comprising forming a second work function metal layer on the first work function metal layer such that the first and second cavities are filled.
20. The semiconductor device of claim 19 , wherein the forming a second work function metal layer forms a first combination of the first and second work function metal layers surrounding the plurality of first semiconductor fins to define a first threshold voltage and forms a second combination of the first and second work function metal layers surrounding the at least one second semiconductor fin to define a second threshold voltage different from the first threshold voltage.