Microelectronic packages having hermetic cavities and methods for the production thereof
Microelectronic packages having hermetic cavities are provided, as are methods for producing such packages. In one embodiment, the microelectronic package includes a sensor die having first and second Microelectromechanical Systems (MEMS) transducer structures formed thereon. First and second cap pieces are coupled to the sensor die by, for example, direct or indirect bonding. A first hermetic cavity encloses the first MEMS transducer structure and is at least partially defined by the first cap piece and the sensor die. Similarly, a second hermetic cavity encloses the second MEMS transducer structure and at least partially defined by the second cap piece and the sensor die. A vent hole is fluidly coupled to the first hermetic cavity and is sealed by the second cap piece.
1. A microelectronic package, comprising:
first and second Microelectromechanical Systems (MEMS) transducer structures formed on a sensor die and enclosed within first and second cavities, respectively;
a first cap piece bonded to the sensor die to seal the first cavity at a first predetermined pressure;
a vent hole fluidly coupled to the second cavity;
a second cap piece bonded to the first cap piece opposite the sensor die, covering the vent hole, and sealing the second cavity at a second predetermined pressure different than the first predetermined pressure; and
an Application Specific Integrated Circuit (ASIC) formed on the second cap piece and fluidly coupled to the second cavity through the vent hole.
2. The microelectronic package of claim 1 wherein the second cap piece is bonded to the first cap piece opposite the sensor die.
3. The microelectronic package of claim 1 further comprising:
Through Silicon Vias (TSVs) formed through the sensor die; and
a contact array formed over the sensor die opposite the first cap piece.
4. The microelectronic package of claim 1 further comprising bonding material attaching the first cap piece to the sensor die and providing a vertical standoff therebetween, a portion of the bonding material disposed between and partitioning the first and second cavities.
5. The microelectronic package of claim 1 further comprising:
electrically-conductive bonding material attaching the first cap piece to the sensor die; and
a contact array formed over the sensor die opposite the first cap piece.
6. The microelectronic package of claim 1 further comprising a magnetometer die bonded to the second cap piece opposite the first cap piece.
7. The microelectronic package of claim 6 further comprising a contact array formed over the sensor die opposite the first cap piece, wherein the first MEMS transducer structure, the second MEMS transducer structure, the Application Specific Integrated Circuit, and the magnetometer die are electrically coupled to the contact array.
8. The microelectronic package of claim 1 further comprising interconnect lines providing electrically-conductive paths between the first and second MEMS transducer structures formed on the sensor die and the ASIC formed on the first cap piece.