Resistive switching memory device with diode select

1. A resistive switching memory device comprising a plurality of resistive memory cells, wherein each of the resistive memory cells comprises:

a) a first diode having an anode coupled to a first word line and a cathode coupled to a common node;

b) a second diode having an anode coupled to the common node and a cathode coupled to a second word line; and

c) a resistive storage element having an anode coupled to a bit line and a cathode coupled to the common node, wherein the resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction, and to be erased to a high resistance state by application of an erase voltage in a reverse bias direction.

2. The resistive switching memory device of claim 1 , wherein:

a) the plurality of resistive memory cells are arranged in X rows and Y columns of a memory array;

b) the first and second word lines are arranged in one of the X rows; and

c) the bit line is arranged in one of the Y columns.

3. The resistive switching memory device of claim 1 , wherein each of the first and second diodes comprises a thin film diode.

4. The resistive switching memory device of claim 1 , wherein each of the plurality of resistive memory cells excludes a transistor.

5. The resistive switching memory device of claim 1 , wherein a selected resistive memory cell is configured to be programmed by driving:

a) the first word line to about 0V;

b) the second word line to about 0V; and

c) the bit line to about the program voltage plus a threshold voltage.

6. The resistive switching memory device of claim 5 , wherein a deselected resistive memory cell that shares the first and second word lines is configured to be inhibited from programming by driving the bit line to about 0V.

7. The resistive switching memory device of claim 6 , wherein a deselected resistive memory cell in a different row is configured to be inhibited from programming by driving:

a) the first word line to about 0V; and

b) the second word line to about the program voltage plus the threshold voltage.

8. The resistive switching memory device of claim 1 , wherein a selected resistive memory cell is configured to be erased by driving:

a) the first word line to about the erase voltage plus a threshold voltage;

b) the second word line to about the erase voltage plus the threshold voltage; and

c) the bit line to about 0V.

9. The resistive switching memory device of claim 8 , wherein a deselected resistive memory cell that shares the first and second word lines is configured to be inhibited from erasing by driving the bit line to about the erase voltage plus the threshold voltage.

10. The resistive switching memory device of claim 9 , wherein a deselected resistive memory cell in a different row is configured to be inhibited from erasing by driving:

a) the first word line to about 0V; and

b) the second word line to about the erase voltage plus the threshold voltage.

11. The resistive switching memory device of claim 1 , wherein a selected resistive memory cell is configured to be read in a forward read by driving:

a) the first word line to about 0V;

b) the second word line to about 0V; and

c) the bit line to about a read voltage plus a threshold voltage.

12. The resistive switching memory device of claim 11 , wherein a deselected resistive memory cell that shares the first and second word lines is configured to be inhibited from reading by driving the bit line to about 0V.

13. The resistive switching memory device of claim 12 , wherein a deselected resistive memory cell in a different row is configured to be inhibited from reading by driving:

a) the first word line to about 0V; and

b) the second word line to about the read voltage plus the threshold voltage.

14. The resistive switching memory device of claim 1 , wherein a selected resistive memory cell is configured to be read in a reverse read by driving:

a) the first word line to about a read voltage plus a threshold voltage;

b) the second word line to about the read voltage plus the threshold voltage; and

c) the bit line to about 0V.

15. The resistive switching memory device of claim 14 , wherein a deselected resistive memory cell that shares the first and second word lines is configured to be inhibited from reading by driving the bit line to about the read voltage plus the threshold voltage.

16. The resistive switching memory device of claim 15 , wherein a deselected resistive memory cell in a different row is configured to be inhibited from reading by driving:

a) the first word line to about 0V; and

b) the second word line to about the read voltage plus the threshold voltage.

17. A resistive switching memory device comprising a plurality of resistive memory cells, wherein each of the resistive memory cells comprises:

a) a first diode having an anode coupled to a first word line and a cathode coupled to a common node;

b) a second diode having an anode coupled to the common node and a cathode coupled to a second word line; and

c) a resistive storage element having a cathode coupled to a bit line and an anode coupled to the common node, wherein the resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction, and to be erased to a high resistance state by application of an erase voltage in a reverse bias direction.

18. A method of controlling a resistive switching memory device having a plurality of resistive memory cells, the method comprising:

a) determining a command for execution on a selected resistive memory cell, wherein each resistive memory cell comprises: a first diode having an anode coupled to a first word line and a cathode coupled to a common node, a second diode having an anode coupled to the common node and a cathode coupled to a second word line, and a resistive storage element having an anode coupled to a bit line and a cathode coupled to the common node;

b) in response to the command being a programming operation: setting the first and second word lines for the selected resistive memory cell, and the first word line and the bit line for deselected resistive memory cells, to about 0V, and setting the bit line for the selected resistive memory cell and the second word line for the deselected resistive memory cells to a program voltage plus a threshold voltage; and

c) in response to the command being an erase operation: setting the first and second word lines for the selected resistive memory cell, and the second word line and the bit line for deselected resistive memory cells, to about an erase voltage plus the threshold voltage, and setting the bit line for the selected resistive memory cell and the first word line for the deselected resistive memory cells to about 0V.

19. The method of claim 18 , further comprising in response to the command being a read operation, executing a forward read by:

a) setting the first and second word lines for the selected resistive memory cell, and the second word line and the bit line for deselected resistive memory cells, to about 0V; and

b) setting the bit line for the selected resistive memory cell and the second word line for the deselected resistive memory cells to about a read voltage plus the threshold voltage.

20. The method of claim 18 , further comprising in response to the command being a read operation, executing a reverse read by:

a) setting the first and second word lines for the selected resistive memory cell, and the second word line and the bit line for deselected resistive memory cells, to about a read voltage plus the threshold voltage; and

b) setting the bit line for the selected resistive memory cell and the first word line for the deselected resistive memory cells to about 0V.