Dynamic random access memory with fully independent partial array refresh function
View Patent ↗A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.
1. A dynamic random access memory (DRAM) device, comprising:
a plurality memory banks each having a plurality of wordlines, each of the plurality of wordlines being connected to a plurality of data store cells that are refreshable in a self-refresh mode;
a first storage for storing first bits, each of the first bits corresponding to a respective one of the plurality of memory banks, to indicate whether or not the respective memory bank is to be refreshed in the self-refresh mode, and one or more memory banks of the plurality of memory banks being indicated, by the first bits, to be refreshed in the self-refresh mode; and
a second storage for storing second bits, the second bits indicating which subblocks of the one or more memory banks are to be refreshed in the self-refresh mode, and
wherein, in the self-refresh mode, the DRAM device performs a self-refresh operation only for the subblocks of the one or more memory banks to be refreshed.
2. The DRAM device of claim 1 , wherein the first storage for storing the first bits comprises a register.
3. The DRAM device of claim 2 , wherein the register comprises a plurality of latches, each latch storing a bit corresponding to one of the plurality of memory banks.
4. The DRAM device of claim 1 , further comprising:
a first address producing circuit configured to produce a first address signal in the self-refresh mode; and
a second address producing circuit configured to produce an external address signal.
5. The DRAM device of claim 3 , further comprising a subblock address controlling circuit configured to control the self-refresh operation for the plurality of memory banks in response to the logical combination of the first address signal, the second address signal, and subblock refresh data.
6. The DRAM device of claim 5 , wherein the subblock address controlling circuit comprises a selecting circuit configured to produce selected addresses, the selected addresses produced based on the first address signal in the self-refresh mode operation and otherwise based on the second address signal.
7. The DRAM device of claim 6 , wherein the subblock address controlling circuit further comprises an address decoding circuit configured to decode the selected addresses to produce decoded addresses corresponding to each of the plurality of memory banks.
8. A method for refreshing a dynamic random access memory (DRAM) device comprising a plurality memory banks each having a plurality of wordlines, each of the plurality of wordlines being connected to a plurality of data store cells that are refreshable in a self-refresh mode, the method comprising:
controlling, in the self-refresh mode, the refreshing of each of the plurality of memory banks independently from each other by:
storing first bits in a first storage, each of the first bits corresponding to a respective one of the plurality of memory banks, to indicate whether or not the respective memory bank is to be refreshed in the self-refresh mode, and one or more memory banks of the plurality of memory banks being indicated, by the first bits, to be refreshed in the self-refresh mode; and
storing second bits in a second storage, the second bits indicating which subblocks of the one or more memory banks are to be refreshed in the self-refresh mode, and
performing, in the self-refresh mode, a self-refresh operation only for the subblocks of the one or more memory banks to be refreshed.
9. The method of claim 8 , further comprising receiving a data input signal comprising bank selection input data corresponding to each of the plurality of banks, wherein the first bits are stored in response to corresponding bank selection input data.
10. An apparatus, comprising:
a controller operable to communicate with a dynamic random access memory device (DRAM) comprising a plurality memory banks each having a plurality of wordlines, each of the plurality of wordlines being connected to a plurality of data store cells that are refreshable in a self-refresh mode, the controller operable to:
generate a data input signal to be communicated to the DRAM device, the data input signal configured to cause the DRAM device to:
i) store first bits in a first storage, each of the first bits corresponding to a respective one of the plurality of memory banks, to indicate whether or not the respective memory bank is to be refreshed in the self-refresh mode, and one or more memory banks of the plurality of memory banks being indicated, by the first bits, to be refreshed in the self-refresh mode; and
ii) store second bits in a second storage, the second bits indicating which subblocks of the one or more memory banks are to be refreshed in the self-refresh mode; and
generate a command signal comprising a plurality of commands, one or more of the plurality of commands operable to cause the DRAM device to initiate the self-refresh mode in which a self-refresh operation is performed only for the subblocks of the one or more memory banks to be refreshed.
11. The apparatus of claim 10 , wherein the data input signal comprises bank selection input data corresponding to each of the plurality of banks of the DRAM device.
12. A method for controlling refreshing a dynamic random access memory device (DRAM) comprising a plurality memory banks each having a plurality of wordlines, each of the plurality of wordlines being connected to a plurality of data store cells that are refreshable in a self-refresh mode, the method comprising:
generating a data input signal to be communicated to the DRAM device, the data input signal configured to cause the DRAM device to:
i) store first bits in a first storage, each of the first bits corresponding to a respective one of the plurality of memory banks, to indicate whether or not the respective memory bank is to be refreshed in the self-refresh mode, and one or more memory banks of the plurality of memory banks being indicated, by the first bits, to be refreshed in the self-refresh mode; and
ii) store second bits in a second storage, the second bits indicating which subblocks of the one or more memory banks are to be refreshed in the self-refresh mode; and
generating a command signal comprising a plurality of commands, one or more of the plurality of commands operable to cause the DRAM device to initiate the self-refresh mode in which a self-refresh operation is performed only for the subblocks of the one or more memory banks to be refreshed.
13. The method of claim 12 , wherein the data input signal comprises bank selection input data corresponding to each of the plurality of banks of the DRAM device.