Segmented driver for a transistor device
View Patent ↗A segmented driver including at least one drive pin and a sense pin, a driver circuit, a comparator, and a controller. The driver circuit activates a selected drive level between the drive pins and a reference node. The comparator compares a voltage of the sense pin with a threshold voltage and provides a threshold indication when the voltage of the sense pin reaches the threshold voltage. The controller commands the driver circuit to activate a first drive level in response to an off indication, and commands the driver circuit to switch to a second, lower drive level in response to the threshold indication. The driver circuit may be implemented using low resistive current devices. Multiple drive pins may be included, each for selectively activating a corresponding drive path to adjust drive level. The threshold voltage may be set using a current source and resistor, and may be adjusted for temperature.
1. A segmented driver, comprising:
at least one drive pin and a sense pin;
a driver circuit that is configured to activate a selected drive level between said at least one drive pin and a reference node;
a comparator that is configured to compare a voltage of said sense pin with a threshold voltage and to provide a threshold indication when said voltage of said sense pin reaches said threshold voltage; and
a controller that is configured to command said driver circuit to activate a first drive level in response to an off indication, and to command said driver circuit to switch from said first drive level to a second drive level that is lower than said first drive level in response to said threshold indication.
2. The segmented driver of claim 1 , wherein said at least one drive pin comprises a first drive pin and a second drive pin, wherein said driver circuit is configured to apply said first drive level by coupling a first resistive path between said first drive pin and said reference node and by coupling a second resistive path between said second drive pin and said reference node, and wherein said driver circuit is configured to apply said second drive level by de-coupling said second resistive path from said second drive pin.
3. The segmented driver of claim 1 , further comprising:
a first current device and a second current device each coupled between said at least one drive pin and said reference node; and
wherein said driver circuit activates both said first current device and said second current device to apply said first drive level, and wherein said driver circuit activates only one of said first current device and said second current device to apply said second drive level.
4. The segmented driver of claim 3 , wherein said first and second current devices each comprise an N-type field-effect transistor having a drain terminal coupled to said at least one drive pin and a source coupled to said reference node.
5. The segmented driver of claim 1 , wherein said at least one drive terminal comprises a first drive pin and a second drive pin, and wherein said segmented driver further comprises:
a first current device coupled between said first drive pin and said reference node;
a second current device coupled between said second drive pin and said reference node; and
wherein said driver circuit activates said first and second current devices to apply said first drive level, and actives only one of said first and second current devices to apply said second drive level.
6. The segmented driver of claim 1 , further comprising:
a threshold pin; and
a current source configured to provide a threshold current to said threshold pin to develop said threshold voltage.
7. The segmented driver of claim 1 , wherein said controller is further configured to command said driver circuit to re-apply said first drive level after a predetermined period of time.
8. The segmented driver of claim 1 , further comprising a sense circuit that is configured to enable said comparator to detect a fault condition in response to an on indication, and wherein said sense circuit is reconfigured to enable said comparator to more quickly detect when said voltage of said sense terminal reaches said threshold voltage in response to said off indication.
9. The segmented driver of claim 1 , further comprising:
a thermal sensor for sensing temperature and for providing a temperature indication indicative thereof; and
a voltage threshold component that is configured to adjust said threshold voltage based on said temperature indication.
10. A bridge system, comprising:
a transistor device having first and second current terminals coupled between a power link and a phase node, and having a control terminal;
a turn off driver coupled to said control terminal of said transistor device;
a comparator that is configured to compare a voltage of said first current terminal of said transistor device with a threshold voltage and to provide a threshold indication when said voltage of said first current terminal reaches said threshold voltage; and
a drive controller that is configured to activate said turn off driver at a first drive level to begin turning off said transistor device in response to an off indication, and to activate said turn off driver at a second drive level which is less than said first drive level in response to said threshold indication.
11. The bridge system of claim 10 , wherein said drive controller is further configured to re-activate said turn off driver at said first drive level after a predetermined time period.
12. The bridge system of claim 10 , further comprising:
a resistor having a first end coupled to said control terminal of said transistor device and having a second end; and
wherein said turn off driver comprises:
a first current device coupled between said second end of said resistor and a reference node; and
a second current device coupled between said control terminal of said transistor device and said reference node.
13. The bridge system of claim 12 , wherein said drive controller is configured to activate said first and second current devices to begin turning off said transistor device at said first drive level, and to de-activate said second current device while said first current device remains activated in response to said threshold indication to complete turning off said transistor device at said second drive level.
14. The bridge system of claim 10 , wherein said transistor device comprises an insulated-gate bipolar transistor.
15. The bridge system of claim 10 , further comprising:
a thermal sensor for sensing and for providing a temperature indication indicative thereof; and
a voltage threshold device that is configured to adjust said threshold voltage based on said temperature indication.
16. A method of segmenting drive operation, comprising:
applying a first drive level between at least one driver node and a reference node to begin a turn off operation;
comparing a voltage of a sense node with a threshold voltage and providing a threshold indication when the voltage of the sense terminal reaches the threshold voltage; and
applying a second drive level that is less than the first drive level in response to the threshold indication to complete the turn off operation.
17. The method of claim 16 , further comprising increasing the drive level back to the first drive level after the turn off operation is completed.
18. The method of claim 16 , wherein said applying a first drive level comprises activating a number of current devices, and wherein said applying a second drive level comprises reducing the number of current devices that are activated.
19. The method of claim 16 , wherein said applying a first drive level comprises activating a first current device coupled to a first driver node and activating a second current device coupled to a second driver node, and wherein said applying a second drive level comprises de-activating the second current device.
20. The method of claim 16 , further comprising:
monitoring temperature and providing a temperature indication; and
adjusting the threshold voltage based on the temperature indication.