Imaging systems with phase detection pixels
An image sensor may include phase detection pixels that receive and convert incident light into pixel signals. Processing circuitry may use pixel signals from the phase detection pixels to determine an amount by which image sensor optics should be adjusted during automatic focusing operations. Phase detection pixels may include photodiodes with asymmetric angular responses. For example, the center of a photodiode in a phase detection pixel may be offset from the optical center of the microlens that covers that photodiode. A group of two, three, four, or more than four phase detection pixels may be clustered together and covered by a single microlens. Groups of these clusters may be arranged consecutively in a line. Phase data may be gathered using all of the phase detection pixels in the array, and image processing circuitry may determine which phase data to use after the data has been gathered.
1. An imaging device having an image pixel array with a plurality of phase detection pixels arranged consecutively in a line, wherein the plurality of phase detection pixels comprises:
first and second photosensitive regions formed in a substrate and covered by a first microlens; and
third and fourth photosensitive regions formed in the substrate and covered by a second microlens, wherein the first microlens is directly adjacent to the second microlens and wherein the second and third photosensitive regions are interposed between the first and fourth photosensitive regions, wherein the first microlens has a first optical axis, wherein the second microlens has a second optical axis, wherein the first and second photosensitive regions are offset from the first optical axis, and wherein the third and fourth photosensitive regions are offset from the second optical axis.
2. The imaging device array defined in claim 1 further comprising a plurality of color filter elements interposed between the substrate and the first and second microlenses.
3. The imaging device defined in claim 2 further comprising an opaque shielding layer formed over the second and third photosensitive regions.
4. The imaging device defined in claim 3 wherein the opaque shielding layer comprises metal.
5. The imaging device defined in claim 3 wherein the second and third photosensitive regions are configured to collect overflow charge respectively from the first and fourth photosensitive regions during charge integration.
6. The imaging device defined in claim 1 further comprising processing circuitry configured to determine a first phase difference signal based on pixel signals from the first and second photosensitive regions and a second phase difference signal based on pixel signals from the first and fourth photosensitive regions.
7. The imaging device defined in claim 6 wherein the plurality of phase detection pixels further comprises:
fifth and sixth photosensitive regions formed in the substrate and covered by a third microlens, wherein the second microlens is directly interposed between the first and the third microlens, and wherein the processing circuitry is configured to determine a third phase difference signal based on pixel signals from the first and sixth photosensitive regions.
8. The imaging device defined in claim 1 further comprising:
at least one lens configured to focus incoming light onto the image pixel array; and
processing circuitry configured to determine an amount by which the lens needs to be adjusted during automatic focusing operations based on pixel signals from the plurality of phase detection pixels.
9. The imaging device defined in claim 1 , wherein the first microlens has first and second opposing halves, wherein the first photosensitive region is formed under only the first half of the first microlens, wherein the second photosensitive region is formed under only the second half of the first microlens, wherein the second microlens has first and second opposing halves, wherein the third photosensitive region is formed under only the first half of the second microlens, wherein the second photosensitive region is formed under only the second half of the second microlens, the imaging device further comprising an opaque shielding layer formed over only the second and third photosensitive regions.
10. An imaging device having an image pixel array with a group of phase detection pixels located adjacent to one another, wherein the group of phase detection pixels comprises:
first, second, third, and fourth photosensitive regions formed in a substrate and covered by a microlens; and
processing circuitry configured to determine a phase difference signal based on pixel signals from the first, second, third, and fourth photosensitive regions, the imaging device further comprising a second group of phase detection pixel located adjacent to the group of phase detection pixels, wherein the second group of phase detection pixels comprises fifth, sixth, seventh, and eighth photosensitive regions formed in the substrate and covered by a second microlens, and wherein the group of phase detection pixels and the second group of phase detection pixels form a 2×4 sub-array in the image pixel array.
11. The imaging device defined in claim 10 wherein the microlens has an optical axis and wherein the first, second, third, and fourth photosensitive regions are offset from the optical axis.
12. The imaging device defined in claim 10 further comprising a metal shielding layer formed over at least some of the photosensitive regions.
13. The imaging device defined in claim 10 wherein the processing circuitry is configured to determine vertical and horizontal phase information.
14. The imaging device defined in claim 10 further comprising:
at least one lens configured to focus incoming light onto the image pixel array; and
processing circuitry configured to determine an amount by which the lens needs to be adjusted during automatic focusing operations based on pixel signals from the group of phase detection pixels.
15. An imaging device having an image pixel array with at least one phase detection pixel, wherein the at least one phase detection pixel comprises:
a first photosensitive region formed in a substrate and covered by a first microlens, wherein the first microlens has first and second opposing halves, and wherein the first photosensitive region is formed under only the first half of the first microlens;
a second photosensitive region formed in the substrate and covered by a second microlens, wherein the second microlens has first and second opposing halves, and wherein the second photosensitive region is formed under only the second half of the second microlens, wherein the first and second microlenses are directly adjacent to one another such that the second half of the first microlens is directly adjacent to the first half of the second microlens, and wherein the substrate has a portion that extends from the first photosensitive region to the second photosensitive region that is free of photosensitive regions.
16. The imaging device defined in claim 15 further comprising processing circuitry that is configured to determine a phase difference signal based on pixel signals from the first photosensitive region and the second photosensitive region.
17. The imaging device defined in claim 15 further comprising:
a third photosensitive region formed in the substrate and covered by the first microlens;
a fourth photosensitive region formed in the substrate and covered by the second microlens, wherein the portion of the substrate that is free of photosensitive regions extends from the third photosensitive region to the fourth photosensitive region.
18. The imaging device defined in claim 15 wherein the first microlens has a first optical axis, wherein the second microlens has a second optical axis, wherein a center of the first photosensitive region is offset from the first optical axis, and wherein a center of the second photosensitive region is offset from the second optical axis.
19. The imaging device defined in claim 16 , wherein no photosensitive regions are formed under the second half of the first microlens, and wherein no photosensitive regions are formed under the first half of the second microlens.
20. The imaging device defined in claim 17 , wherein the third photosensitive region is formed under only the first half of the first microlens, and wherein the fourth photosensitive region is formed under only the second half of the second microlens.