Encapsulant for a semiconductor device
View Patent ↗A mold compound is provided for encapsulating a semiconductor device ( 101 ). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
1. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers;
epoxy resin system; and
beneficial ions that are beneficial with respect to copper ball bond corrosion,
wherein a total level of the beneficial ions in the mold compound is at least approximately 150 ppm, and
the beneficial ions are ions selected from the group consisting of phosphate (PO 4 ) 3− , nitrate (NO 3 ) − , and nitrite (NO 2 ) − .
2. The mold compound of claim 1 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 500 ppm.
3. The mold compound of claim 1 , wherein the total level of nitrite (NO 2 ) − ions in the mold compound is at least approximately 150 ppm.
4. The mold compound of claim 3 , wherein the total level of nitrite (NO 2 ) − ions in the mold compound is less than or equal to approximately 500 ppm.
5. The mold compound of claim 1 , wherein the total level of nitrate (NO 3 ) − ions in the mold compound is at least approximately 150 ppm.
6. The mold compound of claim 5 , wherein the total level of nitrate (NO 3 ) − ions in the mold compound is less than or equal to approximately 500 ppm.
7. The mold compound of claim 1 , wherein the total level of phosphate (PO 4 ) 3− ions in the mold compound is at least approximately 150 ppm.
8. The mold compound of claim 7 , wherein the total level of phosphate (PO 4 ) 3− ions in the mold compound is less than or equal to approximately 500 ppm.
9. The mold compound of claim 1 , wherein an extractable magnesium ion level of the mold compound is at least 180 ppm.
10. A semiconductor device package comprising:
an electronic device that includes an aluminum bond pad;
a copper wire bonded to the aluminum bond pad; and
an encapsulant, the electronic device and the copper wire being encapsulated by the encapsulant,
wherein the encapsulant comprises:
epoxy resin system, and
beneficial ions that are beneficial with respect to copper ball bond corrosion, a total level of the beneficial ions in the encapsulant being at least approximately 150 ppm, and the beneficial ions being ions selected from the group consisting of phosphate (PO 4 ) 3− , nitrate (NO 3 ) − , and nitrite (NO 2 ) − .
11. The semiconductor device package of claim 10 , wherein the total level of nitrite (NO 2 ) − ions in the encapsulant is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.
12. The semiconductor device package of claim 10 , wherein the total level of nitrate (NO 3 ) − ions in the encapsulant is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.
13. The semiconductor device package of claim 10 , wherein the total level of phosphate (PO 4 ) 3− ions in the encapsulant is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.
14. The semiconductor device package of claim 10 , wherein an extractable magnesium ion level of the encapsulant is at least 180 ppm.
15. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers;
epoxy resin system; and
magnesium ions that are beneficial with respect to copper ball bond corrosion,
wherein a total level of extractable magnesium ions in the mold compound is at least approximately 180 ppm.
16. The mold compound of claim 15 , wherein the total level of extractable magnesium ions in the mold compound is less than or equal to 500 ppm.
17. The mold compound of claim 15 , wherein a total level of other beneficial ions in the mold compound is at least approximately 150 ppm, and the other beneficial ions are ions selected from the group consisting of phosphate (PO 4 ) 3− , nitrate (NO 3 ) − , and nitrite (NO 2 ) − .
18. The mold compound of claim 17 , wherein a total level of nitrite (NO 2 ) − ions in the mold compound is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.
19. The mold compound of claim 17 , wherein a total level of nitrate (NO 3 ) − ions in the mold compound is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.
20. The mold compound of claim 17 , wherein a total level of phosphate (PO 4 ) 3− ions in the mold compound is at least approximately 150 ppm and is less than or equal to approximately 500 ppm.