IP Library Granted Patent US 9,733,139
Granted Patent B2
US 9,733,139 · App. 14/269,052 · Granted Aug 15, 2017

Vertical membranes for pressure sensing applications

Inventor: Holger Doering (Sunnyvale, CA)
Assignee: Silicon Microstructures, Inc.
G01L9/0047G01L9/0051G01L19/0618
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Quick Facts
Patent No.
US 9,733,139
App. No.
14/269,052
Granted
Aug 15, 2017
Kind
B2
Abstract

Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

Claims (12)

1. A pressure sensor comprising:

a first wafer having a first recess and a second recess etched in a top side such that a vertical membrane is formed between the first recess and the second recess, wherein the vertical membrane has a first lateral portion between the first recess and the second recess and a second lateral portion between the first recess and the second recess, the first lateral portion thicker than the second lateral portion; and

a second wafer having a bottom side attached to the top side of first wafer such that a first cavity is formed by the first recess and the bottom of the second wafer and a second cavity is formed by the second recess and the bottom of the second wafer.

2. The pressure sensor of claim 1 further comprising a first passage through the second wafer from a top of the second wafer to the first cavity.

3. The pressure sensor of claim 2 wherein the first lateral portion is separate from the second lateral portion.

4. The pressure sensor of claim 2 further comprising a second passage through the first wafer from a bottom of the first wafer to the second cavity such that the pressure sensor forms a differential pressure sensor.

5. The pressure sensor of claim 2 further comprising a second passage through the first wafer from a bottom of the first wafer to the second cavity.

6. The pressure sensor of claim 1 further comprising a first device over the first lateral portion and a second device over the second lateral portion.

7. The pressure sensor of claim 6 wherein the first device and the second device comprise resistors.

8. The pressure sensor of claim 7 wherein the resistors each include a p-type region extending through the second wafer into the vertical membrane in the first wafer.

9. The pressure sensor of claim 1 further comprising a stop in the first cavity extending from a wall of the first cavity opposing the vertical membrane towards the vertical membrane.

10. The pressure sensor of claim 9 wherein the stop is positioned such that a deflection of the vertical membrane may be limited.

Assignments (2)
MERGER Recorded Jun 21, 2022
From: SILICON MICROSTRUCTURES, INC.
To: MEASUREMENT SPECIALTIES, INC.
Reel/Frame 060257/0267 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2014
From: DOERING, HOLGER
To: SILICON MICROSTRUCTURES, INC.
Reel/Frame 032918/0418 →
Continuity (1)
Related Publication 20150316436A1 · Nov 5, 2015