Low K precursors providing superior integration attributes
View Patent ↗A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.
1. A composition comprising:
(a) at least one silicon containing precursor selected from the group consisting of:
(i) R 1 n (OR 2 ) p (O(O)CR 4 ) 3-n-p Si—R 7 —SiR 3 m (O(O)CR 5 ) q (OR 6 ) 3-m-q where R 1 and R 3 are independently selected from the group consisting of H or C 1 to C 4 linear hydrocarbon, C 3 to C 4 branched, saturated hydrocarbon, C 2 to C 4 singly unsaturated hydrocarbon, C 3 to C 4 multiply unsaturated hydrocarbon, C 4 cyclic hydrocarbon, C 1 to C 4 partially or fully fluorinated hydrocarbon; R 2 , R 6 and R 7 are independently selected from the group consisting of C 1 to C 6 linear hydrocarbon, C 3 to C 6 branched, saturated or multiply unsaturated hydrocarbon, C 2 to C 6 singularly unsaturated hydrocarbon, C 4 to C 6 cyclic or, aromatic hydrocarbon, C 1 to C 6 partially or fully fluorinated hydrocarbon; R 4 and R 5 are independently selected from the group consisting of: H, C 1 to C 6 linear hydrocarbon, C 3 to C 6 branched, saturated or multiply unsaturated hydrocarbon, C 2 to C 6 singularly unsaturated hydrocarbon, C 4 to C 6 cyclic or, aromatic hydrocarbon, C 1 to C 6 partially or fully fluorinated hydrocarbon; n is 0 to 3; m is 0 to 3; q is 0 to 3 and p is 0 to 3; provided that n+m≧1, n+p≦3, and m+q≦3;
(ii) R 1 n (OR 2 ) p (O(O)CR 3 ) 4-(n+p) Si where R 1 is independently selected from the group consisting of: H or C 1 to C 4 linear hydrocarbon, C 3 to C 4 branched, saturated, or multiply unsaturated hydrocarbon, C 2 to C 4 singularly unsaturated hydrocarbon, C 4 cyclic hydrocarbon, C 1 to C 4 partially or fully fluorinated hydrocarbon; R 2 is independently selected from the group consisting of C 1 to C 6 linear hydrocarbon, C 3 to C 6 branched, saturated, singly or multiply unsaturated hydrocarbon, C 2 to C 6 singularly unsaturated hydrocarbon, C 4 to C 6 cyclic or aromatic hydrocarbon, C 1 to C 6 partially or fully fluorinated hydrocarbon, R 3 is independently selected from the group consisting of H, C 1 to C 6 linear hydrocarbon, C 3 to C 6 branched, saturated, or multiply unsaturated hydrocarbon, C 2 to C 4 singularly unsaturated hydrocarbon, C 4 to C 6 cyclic or aromatic hydrocarbon, C 1 to C 6 partially or fully fluorinated hydrocarbon; n is 1 to 3; and, p is 0 to 3;
(iii) Methyltriethoxysilane; and,
(iv) Methyltrimethoxysilane; and
(b) a porogen precursor comprising a compound represented by the following formula:
where R1-R6 are groups that can be independently selected from the group consisting of: H; or OH; or C 1 to C 6 linear hydrocarbon, or C 3 to C 6 branched, saturated, or multiply unsaturated hydrocarbon, C 2 to C 6 singularly unsaturated hydrocarbon, C 4 to C 6 cyclic hydrocarbon; or C 1 to C 6 linear alcohol, C 3 to C 6 branched, saturated or multiple unsaturated, alcohol or cyclic ether, and C 2 to C 6 epoxide or ketone.
2. The composition of claim 1 , wherein one or more of the following additives is used: tetraethoxysilane, triethoxysilane, diethoxysilane, and trimethoxysilane.
3. The composition of claim 1 provided in a kit, wherein the porogen and the at least one silicon containing precursor are maintained in separate vessels.
4. The composition of claim 3 wherein at least one of the vessels is a pressurizable stainless steel vessel.
5. The composition of claim 1 wherein the porogen precursor and the at least one silicon containing precursor are maintained in a single vessel having a separation means for maintaining the porogen and the at least one silicon containing precursor separate.
6. The composition of claim 1 wherein the porogen precursor and the at least one silicon containing precursor are premixed in a single vessel.
7. A chemical vapor deposition method for producing a porous organosilica glass film said method comprising:
providing a substrate within a vacuum chamber;
introducing into the vacuum chamber, gaseous reagents comprising a silicon-containing precursor selected from the group consisting of diethoxymethylsilane, methyltriethoxysilane and methyltrimethoxysilane; and a porogen precursor containing organic groups of cymene;
applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and
removing from the preliminary film a portion of organic material originating from the porogen precursor to provide the porous organosilica glass film having a dielectric constant of from 2.1 to 2.6 and a carbon content (XPS) of from 33% to 45%.