Method of manufacturing mounting substrate and method of manufacturing electronic apparatus

1. A method of manufacturing a mounting substrate, the method comprising:

performing, at a first time, a first viscosity modification process of raising a degree of viscosity of a fixing layer on a wiring substrate, the wiring substrate including a first support substrate, an insulating layer, and metallic parts on a first surface of the insulating layer of the wiring substrate;

after the first viscosity modification process, at a second time, transferring part or all of a plurality of devices on a device substrate onto the wiring substrate by a transfer process, and temporarily fixing the transferred devices to the wiring substrate with use of the fixing layer on the wiring substrate, the device substrate including a second support substrate and the plurality of devices fixed on the second support substrate, each of the transferred devices having one or more conductive protrusions on a surface thereof that are partially embedded in the fixing layer but without contacting the metallic parts of the wiring substrate, each conductive protrusion including a metallic layer and a solder bump;

after the transfer process, performing, at a third time, a second viscosity modification process of further raising the degree of viscosity of the fixing layer by one or more methods selected from the group consisting of decompression, light irradiation, and addition of a curing agent, wherein a thickness of the metallic layer, in a direction of a normal to a second surface of the wiring substrate, is less than a thickness of the fixing layer in a same direction, a thickness of the solder bump, in the same direction, is less than the thickness of the fixing layer in the same direction, and a thickness of the one or more conductive protrusions, in the same direction, is greater than the thickness of the fixing layer in the same direction, the second surface being an interface between the first support substrate and a second surface of the insulating layer, and the thickness of the one or more conductive protrusions is a distance in the same direction from a first tip and a second tip opposite the first tip;

after the second viscosity modification process, performing the reflow process on the wiring substrate to reflow and electrically connect the embedded metallic layer of transferred devices with the metallic parts of the wiring substrate, and thereby forming the mounting substrate; and

removing the fixing layer.

2. The method according to claim 1 , further comprising performing the first process of raising the degree of the viscosity of the fixing layer by one or more methods selected from the group consisting of heating, decompression, light irradiation, and addition of a curing agent.

3. The method according to claim 1 , wherein the second viscosity modification process prevents the transferred plurality of devices from shifting during a period of time before the reflow process.

4. A method of manufacturing an electronic apparatus, the method comprising:

performing, at a first time, a first viscosity modification process of raising a degree of viscosity of a fixing layer on a wiring substrate, the wiring substrate including a first support substrate, an insulating layer, and metallic parts on a first surface of the insulating layer of the wiring substrate;

after the first viscosity modification process, at a second time, transferring part or all of a plurality of devices on a device substrate onto the wiring substrate by a transfer process, and temporarily fixing the transferred devices to the wiring substrate with use of the fixing layer on the wiring substrate, the device substrate including a second support substrate and the plurality of devices fixed on the second support substrate, each of the transferred devices having one or more conductive protrusions on a surface thereof that are partially embedded in the fixing layer but without contacting the metallic parts of the wiring substrate, each conductive protrusion including a metallic layer and a solder bump;

after the transfer process, performing, at a third time, a second viscosity modification process of further raising the degree of viscosity of the fixing layer by one or more methods selected from the group consisting of decompression, light irradiation, and addition of a curing agent, wherein a thickness of the metallic layer, in a direction of a normal to a second surface of the wiring substrate, is less than a thickness of the fixing layer in a same direction, a thickness of the solder bump, in the same direction, is less than the thickness of the fixing layer in the same direction, and a thickness of the one or more conductive protrusions, in the same direction, is greater than the thickness of the fixing layer in the same direction, the second surface being an interface between the first support substrate and a second surface of the insulating layer, and the thickness of the one or more conductive protrusions is a distance in the same direction from a first tip and a second tip opposite the first tip;

after the second viscosity modification process, performing the reflow process on the wiring substrate to reflow and electrically connect the embedded first metallic layer of transferred devices with the metallic parts of the wiring substrate, and thereby forming a mounting substrate;

removing the fixing layer; and

forming the electronic apparatus including the mounting substrate.

5. The method according to claim 4 , wherein the second viscosity modification process prevents the transferred plurality of devices from shifting during a period of time before the reflow process.