Display device
A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
1. A method of manufacturing a display device where a transparent oxide layer and a semiconductor layer are formed on a pixel region on a substrate with either one of the transparent oxide layer and the semiconductor layer forming an upper layer, and an insulating film and a conductive layer are sequentially stacked on either one of the transparent oxide layer and the semiconductor layer, the method comprising the steps of:
forming the conductive layer which has a gate electrode of a thin film transistor connected to a gate signal line; and
converting the transparent oxide layer having an opening portion or a notched portion in at least a channel region portion directly below the gate electrode into an electrically conductive region by performing processing for selectively forming a region with a high carrier concentration and a region with a low carrier concentration in a separated manner using a mask pattern.
2. The method of manufacturing a display device according to claim 1 , wherein the processing for converting a region into an electrically conductive region is any one selected from a group consisting of light irradiation, thermal annealing, implantation of ion and impurity doping, or a combination of the processings selected from the group.
3. The method of manufacturing a display device according to claim 1 , wherein the mask pattern is formed by a photolithography process which uses a photoresist.
4. The method of manufacturing a display device according to claim 1 , wherein the mask pattern is an electrode pattern.