Semiconductor device with composite drift region and related fabrication method
View Patent ↗A device includes a semiconductor substrate, a body region in the semiconductor substrate having a first conductivity type and in which a channel is formed during operation, source and drain regions in the semiconductor substrate and having a second conductivity type, the source region being disposed on the body region, and a composite drift region in the semiconductor substrate, having the second conductivity type, and through which charge carriers from the source region drift to reach the drain region after passing through the channel. The composite drift region includes a first section adjacent the channel, a second section adjacent the drain region, and a third section disposed between the first and second sections. The first and second sections have a lower effective dopant concentration level than the third section.
1. A device comprising:
a semiconductor substrate having a surface;
a gate structure supported by the semiconductor substrate at the surface;
a body region in the semiconductor substrate having a first conductivity type and in which a channel is formed proximate the gate structure;
source and drain regions in the semiconductor substrate and having a second conductivity type, the source region being disposed on the body region;
an isolation region disposed in the semiconductor substrate between the body region and the drain region; and
a composite drift region in the semiconductor substrate, having the second conductivity type, and through which charge carriers from the source region drift to reach the drain region after passing through the channel;
wherein the composite drift region comprises a first, channel-side section adjacent the channel, a second, drain-side section adjacent the drain region, and a third section disposed between the first and second sections;
wherein the first and second sections have a dopant concentration level that decreases by an order of magnitude or more between upper and lower boundaries of the first and second sections;
wherein the first and second sections have a lower dopant concentration level than the third section at a first depth, relative to the surface of the semiconductor substrate, deeper than a lower boundary of the isolation region; and
wherein the first and second sections have a higher dopant concentration level than the third section at a second depth, relative to the surface of the semiconductor substrate, shallower than the lower boundary of the isolation region.
2. The device of claim 1 , wherein the first and second sections have a shallower lower boundary relative to the surface of the semiconductor substrate than the third section.
3. The device of claim 1 , wherein:
the first and second sections form an outer portion of the composite drift region;
the outer portion has a hole; and
the third section is disposed in the hole.
4. The device of claim 1 , wherein:
the composite drift region comprises a fourth section disposed between the second and third sections; and
the fourth section has a higher dopant concentration level than the first, second, and third sections.
5. The device of claim 1 , wherein the third section of the composite drift region is disposed under the isolation region.
6. The device of claim 5 , wherein the third section of the composite drift region does not laterally extend beyond the isolation region.
7. The device of claim 1 , wherein the first and third sections are contiguous with one another.
8. The device of claim 1 , wherein the first and second sections have a common dopant concentration profile from a first depth at which the second section connects with the drain region to a second depth that corresponds with a lower boundary of the first and second sections.
9. An electronic apparatus comprising:
a semiconductor substrate having a surface; and
a transistor disposed in the semiconductor substrate, the transistor comprising:
a gate structure supported by the semiconductor substrate at the surface;
a well region having a first conductivity type and in which a channel is formed proximate the gate structure;
first and second contact regions having a second conductivity type, the first contact region being disposed within the well region;
an isolation region disposed in the semiconductor substrate between the well region and the second contact region; and
a composite region having the second conductivity type, wherein charge carriers from the first contact region pass through the composite region to reach the second contact region after passing through the channel;
wherein the composite region comprises an interior section, a first exterior, channel-side section, and a second exterior, contact-side section adjacent the second contact region;
wherein the interior section is disposed between the first and second exterior sections;
wherein the first and second exterior sections have a dopant concentration level that decreases by an order of magnitude or more between upper and lower boundaries of the first and second exterior sections;
wherein the first and second exterior sections have a lower dopant concentration level than the interior section at a first depth, relative to the surface of the semiconductor substrate, deeper than a lower boundary of the isolation region; and
wherein the first and second exterior sections have a higher dopant concentration level than the interior section at a second depth, relative to the surface of the semiconductor substrate, shallower than the lower boundary of the isolation region.
10. The electronic apparatus of claim 9 , wherein the first and second exterior sections have a shallower lower boundary relative to the surface of the semiconductor substrate than the interior section.
11. The electronic apparatus of claim 9 , wherein:
the composite region comprises a further interior section disposed along a side of the second exterior section on the side proximate the second contact region; and
the further interior section has a higher dopant concentration level than the interior section and the first and second exterior sections.
12. The electronic apparatus of claim 11 , wherein the interior section and the further interior section are disposed under the isolation region.
13. The electronic apparatus of claim 12 , wherein the interior section and the further interior section do not laterally extend beyond the isolation region.
14. The device of claim 1 , wherein the semiconductor substrate comprises an epitaxial layer in which the composite drift region is disposed, the epitaxial layer having the first conductivity type, and wherein dopant concentration levels of the epitaxial layer and the first and second sections at the first depth have a common order of magnitude.
15. The electronic apparatus of claim 9 , wherein the semiconductor substrate comprises an epitaxial layer in which the composite region is disposed, the epitaxial layer having the first conductivity type, and wherein dopant concentration levels of the epitaxial layer and the first and second exterior sections at the first depth have a common order of magnitude.
16. The electronic apparatus of claim 9 , wherein the first and second exterior sections have a common dopant concentration profile.
17. The device of claim 1 , wherein:
the first section defines an accumulation region configured to accumulate charge carriers after the charge carriers pass through the channel; and
the second section is in contact with the drain region.
18. The electronic apparatus of claim 9 , wherein
the first exterior section defines an accumulation region configured to accumulate charge carriers after the charge carriers pass through the channel; and
the second exterior section is in contact with the second contact region.