Backside structure and methods for BSI image sensors
A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal shield layer is formed over the bottom anti-reflective coating. The metal shield layer is patterned to form a grid pattern over a sensor array region of the substrate, and a first dielectric layer and a second dielectric layer are formed to at least partially fill in openings within the grid pattern.
1. A back side image sensor comprising:
a semiconductor substrate with a first side and a second side, the semiconductor substrate comprising a pixel region and a periphery region;
a BARC layer located on the second side, the BARC layer having a first region with a first thickness in the periphery region and a second region with a second thickness in the pixel region, the second thickness being less than the first thickness;
a metal shield grid located over the BARC layer, wherein the metal shield grid comprises a first opening through the metal shield grid, the first opening located over the second region;
a first dielectric layer covering sidewalls of the first opening, the first dielectric layer having a first refractive index; and
a second dielectric layer adjacent to the first dielectric layer, the second dielectric layer having a second refractive index different from the first refractive index.
2. The back side image sensor of claim 1 , further comprising a third dielectric layer adjacent to the second dielectric layer within the first opening.
3. The back side image sensor of claim 2 , wherein the third dielectric layer has a third refractive index different from the second refractive index.
4. The back side image sensor of claim 3 , further comprising a passivation layer adjacent to the third dielectric layer.
5. The back side image sensor of claim 4 , wherein the first dielectric layer, the second dielectric layer, and the third dielectric layer completely fill the first opening.
6. The back side image sensor of claim 1 , wherein the metal shield grid has a width that is between 5% and 70% of a pixel pitch of the back side image sensor.
7. The back side image sensor of claim 1 , wherein the first dielectric layer has a first thickness within the first opening that is less than 50% of a width of the first opening.
8. A back side image sensor comprising:
a substrate with a pixel region and a periphery region;
a BARC layer adjacent to a first side of the substrate in both the pixel region and the periphery region;
a metal shield layer opposite the BARC layer from the substrate;
a first opening over the pixel region, wherein the first opening extends all of the way through the metal shield layer and extends through a portion of the BARC layer;
a first dielectric layer lining sidewalls of the first opening and filling a first portion of the first opening; and
a second dielectric layer adjacent to the first dielectric layer and filling a second portion of the first opening, wherein the second dielectric layer has a refractive index different from the first dielectric layer.
9. The back side image sensor of claim 8 , further comprising a third dielectric layer filling a third portion of the first opening.
10. The back side image sensor of claim 9 , wherein the third dielectric layer has a refractive index that is different from the second dielectric layer.
11. The back side image sensor of claim 10 , further comprising a passivation layer over the third dielectric layer.
12. The back side image sensor of claim 8 , wherein the first opening is part of a grid pattern over the pixel region.
13. The back side image sensor of claim 8 , wherein the first opening has a width that is between 5% and 70% of a pixel pitch of the back side image sensor.
14. A back side image sensor comprising:
a pixel region and a logic region within a substrate;
a first region adjacent to the logic region, the first region comprising:
a BARC layer;
a metal shield layer on an opposite side of the BARC layer from the substrate;
a second region adjacent to the pixel region, the second region comprising:
the BARC layer, wherein the BARC layer within the second region is thinner than the BARC layer in the first region;
the metal shield layer, wherein the metal shield layer is a grid pattern within the second region;
a first dielectric layer extending through the metal shield layer in the second region, the first dielectric layer in physical contact with the BARC layer within the second region; and
a second dielectric layer adjacent to the first dielectric layer in the second region, wherein the second dielectric layer has a different refractive index than the first dielectric layer.
15. The back side image sensor of claim 14 , further comprising a third dielectric layer, wherein the first dielectric layer, the second dielectric layer, and the third dielectric layer fill a portion of the grid pattern.
16. The back side image sensor of claim 15 , wherein the third dielectric layer has a different refractive index than the second dielectric layer.
17. The back side image sensor of claim 16 , further comprising a passivation layer on an opposite side of the third dielectric from the substrate.
18. The back side image sensor of claim 14 , wherein the grid pattern has an opening with a width that is between 5% and 70% of a pixel pitch of the back side image sensor.
19. The back side image sensor of claim 14 , wherein the BARC layer in the second region is less than 90% of the BARC layer in the first region.
20. The back side image sensor of claim 14 , wherein a sidewall of the BARC layer in the second region is aligned with a sidewall of the grid pattern in the first region.