Method of accessing a memory device
A method is provided for accessing a memory device. The method includes programming data in a plurality of cells of the memory device in a first programming operation. The first programming operation uses a first memory instruction including at least one first parameter representative of at least one first threshold voltage value for said programming. The method further includes re-programming at least a portion of the data in the plurality of cells in a second programming operation. The second programming operation uses a second memory instruction including at least one second parameter representative of at least one second threshold voltage value for said re-programming, wherein said re-programming provides bit manipulation of the portion of the data.
1. A method of accessing of a memory device, the method comprising:
programming data in a plurality of cells of the memory device in a first programming operation, the first programming operation using a first memory instruction comprising at least one first parameter representative of at least one first threshold voltage value for said programming; and
re-programming at least a portion of the data in the plurality of cells in a second programming operation, the second programming operation using a second memory instruction comprising at least one second parameter representative of at least one second threshold voltage value for said re-programming, wherein said re-programming provides bit manipulation of the portion of the data.
2. The method of claim 1 , wherein the first programming operation comprises selecting a first set of threshold voltage distributions to program the data.
3. The method of claim 2 , wherein the second programming operation comprises selecting a second set of threshold voltage distributions to re-program the data.
4. The method of claim 1 , wherein the second programming operation comprises programming additional bits.
5. The method of claim 4 , wherein the second programming operation changes error correction code (ECC) bits.
6. The method of claim 1 , wherein the at least one first threshold voltage value comprises two first threshold voltage values, the at least one second threshold voltage value comprises two second threshold voltage values.
7. The method of claim 6 , further comprising reading the data programmed in the first programming operation using a read voltage value between the two first threshold voltage values.
8. The method of claim 6 , further comprising reading the portion of the data re-programmed in the second programming operation using a read voltage value between the two second threshold voltage values.
9. The method of claim 1 , further comprising re-programming at least a second portion of the data in the plurality of cells in a third programming operation, the third programming operation using a third memory instruction comprising at least one third parameter representative of at least one third threshold voltage value for said re-programming.
10. The method of claim 9 , wherein the at least one first threshold voltage value comprises two first threshold voltage values, the at least one second threshold voltage value comprises two second threshold voltage values, and the at least one third threshold voltage value comprises two third threshold voltage values.
11. The method of claim 10 , further comprising reading the data programmed in the first programming operation using a read voltage value between the two first threshold voltage values.
12. The method of claim 10 , further comprising reading the portion of the data re-programmed in the second programming operation using a read voltage value between the two second threshold voltage values.
13. The method of claim 10 , further comprising reading the second portion of the data re-programmed in the third programming operation using a read voltage value between the two third threshold voltage values.
14. The method of claim 10 , wherein the two second threshold voltage values comprise one of the two first threshold voltage values.
15. The method of claim 10 , wherein the two third threshold voltage values comprise one of the two second threshold voltage values.
16. A memory device comprising:
a plurality of memory cells; and
circuitry to:
program data in the plurality of memory cells in a first programming operation using a first memory instruction comprising at least one first parameter representative of at least one first threshold voltage value; and
re-program at least a portion of the data in the plurality of memory cells in a second programming operation using a second memory instruction comprising at least one second parameter representative of at least one second threshold voltage value.
17. The memory device of claim 16 , wherein the circuitry provides bit manipulation of the portion of the data by the second programming operation.
18. A memory system comprising:
a memory device comprising a plurality of memory cells and a memory controller to:
program data in the plurality of memory cells in a first programming operation using a first memory instruction comprising at least one first parameter representative of at least one first threshold voltage value; and
re-program at least a portion of the data in the plurality of memory cells in a second programming operation using a second memory instruction comprising at least one second parameter representative of at least one second threshold voltage value; and
a processor configured to host one or more applications and to provide access to said plurality of memory cells.
19. The memory system of claim 18 , wherein the memory controller provides bit manipulation of the portion of the data by the second programming operation.