Process for producing at least one through-silicon via with improved heat dissipation, and corresponding three-dimensional integrated structure
A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.
1. A method of making at least one through-silicon via inside a substrate of an integrated circuit (IC) comprising:
forming a cavity in the substrate from a first side of the substrate, the cavity being formed to extend inwardly from the first side to expose an electrically conductive portion;
forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on the first side outside the cavity;
at least partially filling the cavity with at least one phase-change material, the at least one phase-change material storing or releasing thermal energy upon a temperature-based phase change within a temperature range of operation of the IC; and
forming a polymer layer at a top of the cavity and in contact with the at least one phase-change material.
2. The method according to claim 1 , wherein the polymer layer is deformable based upon a phase change of the at least one phase-change material.
3. The method according to claim 2 , wherein the polymer layer has a Young's modulus of less than 3 GPa.
4. The method according to claim 2 , wherein the polymer layer comprises polybenzoxazole.
5. The method according to claim 1 , wherein the at least one phase-change material comprises copper particles.
6. A method of making at least one through-silicon via inside a substrate of an integrated circuit (IC) comprising:
forming a cavity in the substrate to expose an electrically conductive portion;
forming an electrically conductive layer within the cavity;
at least partially filling the cavity with at least one phase-change material, the at least one phase-change material storing or releasing thermal energy upon a temperature-based phase change within a temperature range of operation of the IC; and
forming a polymer layer within the cavity and coupled to the at least one phase-change material.
7. The method according to claim 6 , wherein the polymer layer is deformable based upon a phase change of the at least one phase-change material.
8. The method according to claim 7 , wherein the polymer layer has a Young's modulus of less than 3 GPa.
9. The method according to claim 7 , wherein the polymer layer comprises polybenzoxazole.
10. The method according to claim 6 , wherein the at least one phase-chase material comprises copper.
11. A three-dimensional integrated structure comprising:
a substrate;
an electrically conductive portion carried by said substrate; and
a through-silicon via extending into said substrate from a first side of said substrate to said electrically conductive portion, said through-silicon via comprising an electrically conductive layer extending at least partly onto the first side,
a filler material in contact with said electrically conductive layer, said filler material comprising at least one phase-change material, the at least one phase-change material storing or releasing thermal energy upon a temperature-based phase change within a temperature range of operation of the three-dimensional integrated structure, and
a polymer layer over and coupled to said filler material.
12. The three-dimensional integrated structure according to claim 11 , wherein said polymer layer is configured to deform based upon a phase change of the at least one phase-change material.
13. The three-dimensional integrated structure according to claim 12 , wherein said polymer layer comprises polybenzoxazole.
14. The three-dimensional integrated structure according to claim 12 , wherein said polymer layer has a Young's modulus of less than 3 GPa.
15. The three-dimensional integrated structure according to claim 11 , wherein said at least one phase-change material comprises copper particles.
16. An integrated structure comprising:
a substrate;
a first electrically conductive layer carried by said substrate; and
a through-silicon via extending into said substrate to said first electrically conductive layer, said through-silicon via comprising a second electrically conductive layer,
at least one phase-change material coupled to said second electrically conductive layer, the at least one phase-change material storing or releasing thermal energy upon a temperature-based phase change within a temperature range of operation of the integrated structure, and
a polymer layer over and coupled to said at least one phase-change material.
17. The integrated structure according to claim 16 , wherein said polymer layer is configured to deform based upon a phase change of the at least one phase-change material.
18. The integrated structure according to claim 17 , wherein said polymer layer comprises polybenzoxazole.
19. The integrated structure according to claim 17 , wherein said polymer layer has a Young's modulus of less than 3 GPa.
20. The integrated structure according to claim 16 , wherein said at least one phase-change material comprises copper.