IP Library Granted Patent US 9,247,234
Granted Patent B2
US 9,247,234 · App. 14/287,907 · Granted Jan 26, 2016

Imagers with depth sensing capabilities

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Quick Facts
Patent No.
US 9,247,234
App. No.
14/287,907
Granted
Jan 26, 2016
Kind
B2
Abstract

An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns.

Claims (16)

1. A depth sensing imaging pixel comprising:

a photosensitive region and a non-photosensitive region together having an asymmetrical angular response to incident light, wherein the non-photosensitive region comprises an opaque layer formed above a photosensitive element, wherein the photosensitive region includes a first portion of the photosensitive element, and wherein the opaque layer is operable to prevent at least some of the incident light from reaching a second portion of the photosensitive element; and

a microlens, wherein the microlens overlaps the entire photosensitive region, the entire non-photosensitive region, and the entire opaque layer.

2. The depth sensing imaging pixel defined in claim 1 further comprising a substrate layer, wherein the photosensitive region is formed in the substrate layer.

3. The depth sensing imaging pixel defined in claim 2 wherein the substrate layer comprises a first portion and a second portion, wherein the photosensitive region comprises the first portion and the non-photosensitive region comprises the second portion.

4. The depth sensing imaging pixel defined in claim 2 wherein the opaque layer comprises a dielectric.

5. The depth sensing imaging pixel defined in claim 1 further comprising a color filtering layer operable to pass predetermined wavelengths of the incident light to both the photosensitive region and the non-photosensitive region.

6. The depth sensing imaging pixel defined in claim 2 wherein the opaque layer comprises a metal layer.

7. The depth sensing imaging pixel defined in claim 1 further comprising a filtering layer operable to pass predetermined wavelengths of the incident light to both the photosensitive region and the non-photosensitive region, wherein the predetermined wavelengths include blue wavelengths, red wavelengths, and green wavelengths.

8. The depth sensing imaging pixel defined in claim 1 , wherein the opaque layer is in direct contact with the non-photosensitive region.

9. The depth sensing imaging pixel defined in claim 1 , wherein the opaque layer is separated from the non-photosensitive region.

10. A depth sensing imaging pixel comprising:

a photosensitive region and a non-photosensitive region together having an asymmetrical angular response to incident light, wherein the non-photosensitive region comprises an opaque layer formed above a photosensitive element, wherein the photosensitive region includes a first portion of the photosensitive element, and wherein the opaque layer is operable to prevent at least some of the incident light from reaching a second portion of the photosensitive element; and

a microlens, wherein the microlens overlaps the entire non-photosensitive region.

11. The depth sensing imaging pixel defined in claim 10 ,

wherein the microlens overlaps the entire opaque layer.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2014
From: AGRANOV, GENNADIY; CAO, DONGGING; NAKAMURA, JUNICHI; JOHNSON, RICHARD SCOTT
To: APTINA IMAGING CORPORATION
Reel/Frame 034486/0342 →