Indium oxide transparent conductive film
View Patent ↗An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.
1. An indium oxide transparent conductive film containing zirconium as an additive, wherein a ratio of atomic concentration of zirconium to a sum of that of indium and zirconium is in a range of 0.5 to 4%, resistivity is 8×10 −4 Ω·cm or less, electron mobility is 15 cm 2 /V·s or more, transmittance in a wavelength of 1200 nm is 85% or higher, and the indium oxide transparent conductive film is amorphous.
2. The indium oxide transparent conductive film according to claim 1 , wherein a crystallization temperature of the film is in a range of 150° C. to 260° C.
3. The indium oxide transparent conductive film according to claim 1 containing tin in addition to the additive, wherein a ratio of atomic concentration of tin to a sum of that of indium, zirconium and tin is in a range of 0.015 to 0.5%, the resistivity is 8×10 −4 Ω·cm or less, the electron mobility is 15 cm 2 /V·s or more, the transmittance in a wavelength of 1200 nm is 85% or higher, and the indium oxide transparent conductive film is amorphous.
4. The indium oxide transparent conductive film according to claim 3 , wherein a crystallization temperature of the film is in a range of 150° C. to 260° C.
5. The indium oxide transparent conductive film according to claim 3 containing at least one of magnesium and calcium in addition to the additive, wherein a ratio of atomic concentration of magnesium or calcium or a sum of the atomic concentrations thereof to a sum of that of all metal elements in the film is in a range of 0.5 to 2.0%, the resistivity is 8×10 −4 Ω·cm or less, the electron mobility is 15 cm 2 /V·s or more, the transmittance in a wavelength of 1200 nm is 85% or higher, and the indium oxide transparent conductive film is amorphous.
6. The indium oxide transparent conductive film according to claim 5 , wherein crystallization temperature of the film is in a range of 150° C. to 260° C.