Semiconductor device

1. A semiconductor device comprising:

a lead frame comprising a first segment and a second segment arranged side by side with the first segment, wherein the first segment is spatially isolated from the second segment;

a first semiconductor component having a top side and a bottom side, wherein the bottom side of the first semiconductor component is disposed on the first segment;

a second semiconductor component having a top side and a bottom side, wherein the second semiconductor component is thicker than the first semiconductor component, and the bottom side of the second semiconductor component is disposed on the second segment; and

a first conductive member electrically connecting the second semiconductor component to the first segment,

wherein the top side of the first semiconductor component and the top side of the second semiconductor component are substantially at the same level.

2. The semiconductor device of claim 1 , wherein the first semiconductor component is a vertical component, and the second semiconductor component is a lateral component.

3. The semiconductor device of claim 1 , wherein the first conductive member is a metal plate.

4. The semiconductor device of claim 1 , wherein the first conductive member is unitarily formed with the first segment.

5. The semiconductor device of claim 1 , further comprising:

a third segment disposed next to and spatially isolated from the second segment; and

a second conductive member electrically connecting the third segment to the second conductor component.

6. The semiconductor device of claim 5 , further comprising:

a fourth segment disposed next to and spatially isolated from the first segment; and

a third conductive member electrically connecting the fourth segment to the first semiconductor component.

7. The semiconductor device of claim 6 , further comprising a sealant sealing the first semiconductor component and the second semiconductor component, wherein at least one of the first segment, the second segment, the third segment, the fourth segment, the first conductive member, the second conductive member, and the third conductive member is at least partially exposed by the sealant.

8. The semiconductor device of claim 6 , wherein the second conductive member and the third conductive member are metal plates.

9. The semiconductor device of claim 6 , wherein the first conductive member, the second conductive member, and the third conductive member are substantially at the same level.

10. The semiconductor device of claim 1 , wherein the lead frame is made of metal or alloy.

11. A semiconductor device comprising:

a lead frame comprising a first segment and a second segment arranged side by side and being spatially isolated from each other, wherein the first segment comprises a first pad portion and a second pad portion with a level relatively high compared to a level of the first pad portion, and the first pad portion is thicker than the second segment;

a first semiconductor component having a top side and a bottom side, wherein the bottom side of the first semiconductor component is disposed on the first pad portion of the first segment;

a second semiconductor component having a top side and a bottom side, wherein the bottom side of the second semiconductor component is disposed on the second segment;

a first conductive member disposed on the second pad portion of the first segment and the top side of the second semiconductor component; and

a second conductive member disposed on the top side of the second semiconductor component, wherein the second conductive member is separated from the first conductive member.

12. The semiconductor device of claim 11 , wherein the first semiconductor component is a vertical component, and the second semiconductor component is a lateral component.

13. The semiconductor device of claim 11 , wherein the second semiconductor component comprises a source electrode, a gate electrode, and a drain electrode, and the first conductive member is electrically connected to at least one of the source electrode, the gate electrode, and the drain electrode of the second semiconductor component.

14. The semiconductor device of claim 11 , wherein the first conductive member and the second conductive member are metal plates.

15. The semiconductor device of claim 11 , wherein the lead frame comprises a third segment disposed next to and spatially isolated from the second segment, and the second conductive member is connected to the third segment and the second semiconductor component.

16. The semiconductor device of claim 15 , further comprising:

a fourth segment disposed next to and spatially isolated from the first segment; and

a third conductive member electrically connecting the fourth segment to the first semiconductor component.

17. The semiconductor device of claim 16 , wherein the third conductive member is a metal plate, and the first conductive member, the second conductive member, and the third conductive member are substantially at the same level.

18. The semiconductor device of claim 16 , further comprising a sealant sealing the first semiconductor component and the second semiconductor component, wherein at least one of the first segment, the second segment, the third segment, the fourth segment, the first conductive member, the second conductive member, and the third conductive member is at least partially exposed by the sealant.

19. The semiconductor device of claim 11 , wherein the first conductive member is unitarily formed with the first segment.