Organoaminosilane precursors and methods for making and using same

1. A method for forming a silicon-containing film on at least one surface of a substrate comprising:

providing the at least one surface of the substrate in a reaction chamber; and

forming the silicon-containing film on the at least one surface by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process from an at least one organoaminosilane having Formula A, B, and C or mixtures thereof is employed as at least one of the silicon containing precursors:

wherein R is independently selected from a C 1 to C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group in formula C with or without substituents; R 1 is independently selected from a C 3 -C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a hydrogen atom; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group with substituents; and R 2 represents a single bond; a saturated or unsaturated, linear or branched, substituted or unsubstituted, hydrocarbon chain wherein the number of carbon atoms ranges from 1 to 10; a saturated or unsaturated, carbocyclic or heterocyclic ring; SiR 2 ; or SiH 2 , and wherein R and R 1 in Formula A are also combinable to form a cyclic group wherein the organoaminosilane is one selected from the group consisting of: 1-silyl-7-azaindole, N-silyl-2,5-dimethylpyrrole, N-(4-methoxyphenyl)disilazane, N-(3-methoxyphenyl)disilazane, N-(2-methoxyphenyl)disilazane, N-(4-chlorophenyl)disilazane, N-(2-chlorophenyl)disilazane, N-(2-ethylphenyl)disilazane, N-(2,6-diethylphenyl)disilazane, N-(2-propylphenyl)disilazane, N-(4-t-butylphenyl)disilazane, N-(4-iso-propylphenyl)disilazane, N-(2-iso-propylphenyl)disilazane, N-(3-ethylphenyl)disilazane, N-(4-sec-butylphenyl)disilazane, N-(4-vinylphenyl)disilazane, N-(3-methylphenyl)disilazane, N-(4-methylphenyl)disilazane, N-(2,4,6-trimethylphenyl)disilazane, N-(2,6-di-isopropylphenyl)disilazane, 1-N-(2-pyridyl)disilazane, N,N-disilyl-2-aminopyrimidine, N-(4-methyl-2-pyridyl)disilazane, N-(6-methyl-2-pyridyl)disilazane, N-(3-methyl-2-pyridyl)disilazane, N-(5-methyl-2-pyridyl)disilazane, and N-[2-disilyl-2-(4-methylpyrimidino)amino]disilazane, N-(2-dimethylamino-1-methylethyl)disilazane, N-(2-dimethylaminoethyl)disilazane, N-(1-cyclohexylethyl)disilazane, N,N-disilylcumylamine, N-[3,3-dimethylbutyl-2]disilazane, N,N-disilyl-2-picolylamine, N,N-disilyl-2-(2-pyridyl)ethylamine, and N,N-disilyl-1-(4-methylphenyl)ethylamine, N-propyl-isopropylaminosilane, N-methylcyclohexylaminosilane, N-ethylcyclohexylaminosilane, allylphenylaminosilane, N-isopropylcyclohexylaminosilane, allylcyclopentylaminosilane, phenylcyclohexylaminosilane, and 2-(N-silylmethylamino)pyridine.

2. The method of claim 1 wherein the silicon containing film is at least one selected from the group consisting of: a silicon oxide film, a silicon oxycarbide film, a silicon nitride film, a silicon oxynitride film, a silicon oxycarbonitride film, a silicon carbonitride, and an amorphous silicon film.

3. A method of forming a silicon oxide or a silicon oxycarbide film via an atomic layer deposition or plasma enhanced atomic layer deposition process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one silicon precursor selected from an at least one organoaminosilane having Formula A, B, and C or mixtures thereof is employed as at least one of the silicon containing precursors:

wherein R is independently selected from a C 1 to C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group in formula C with or without substituents; R 1 is independently selected from a C 3 -C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a hydrogen atom; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group with substituents; and R 2 represents a single bond; a saturated or unsaturated, linear or branched, substituted or unsubstituted, hydrocarbon chain wherein the number of carbon atoms ranges from 1 to 10; a saturated or unsaturated, carbocyclic or heterocyclic ring; SiR 2 ; or SiH 2 , and wherein R and R 1 in Formula A are also combinable to form a cyclic group;

c. purging the reactor with a purge gas;

d. introducing an oxygen source into the reactor;

e. purging the reactor with a purge gas; and

the steps b through e are repeated until a desired thickness of the film is obtained wherein the organoaminosilane is one selected from the group consisting of: 1-silyl-7-azaindole, N-silyl-2,5-dimethylpyrrole, N-(4-methoxyphenyl)disilazane, N-(3-methoxyphenyl)disilazane, N-(2-methoxyphenyl)disilazane, N-(4-chlorophenyl)disilazane, N-(2-chlorophenyl)disilazane, N-(2-ethylphenyl)disilazane, N-(2,6-diethylphenyl)disilazane, N-(2-propylphenyl)disilazane, N-(4-t-butylphenyl)disilazane, N-(4-iso-propylphenyl)disilazane, N-(2-iso-propylphenyl)disilazane, N-(3-ethylphenyl)disilazane, N-(4-sec-butylphenyl)disilazane, N-(4-vinylphenyl)disilazane, N-(3-methylphenyl)disilazane, N-(4-methylphenyl)disilazane, N-(2,4,6-trimethylphenyl)disilazane, N-(2,6-di-isopropylphenyl)disilazane, 1-N-(2-pyridyl)disilazane, N,N-disilyl-2-aminopyrimidine, N-(4-methyl-2-pyridyl)disilazane, N-(6-methyl-2-pyridyl)disilazane, N-(3-methyl-2-pyridyl)disilazane, N-(5-methyl-2-pyridyl)disilazane, and N-[2-(4-methylpyrimidino)amino]disilazane, N-(2-dimethylamino-1-methylethyl)disilazane, N-(2-dimethylaminoethyl)disilazane, N-(1-cyclohexylethyl)disilazane, N,N-disilylcumylamine, N-[3,3-dimethylbutyl-2]disilazane, N,N-disilyl-2-picolylamine, N,N-disilyl-2-(2-pyridyl)ethylamine, and N,N-disilyl-1-(4-methylphenyl)ethylamine, N-propyl-isopropylaminosilane, N-methylcyclohexylaminosilane, N-ethylcyclohexylaminosilane, allylphenylaminosilane, N-isopropylcyclohexylaminosilane, allylcyclopentylaminosilane, phenylcyclohexylaminosilane, and 2-(N-silylmethylamino)pyridine.

4. The method of claim 3 wherein the oxygen source is selected from groups consisting of oxygen (O 2 ), oxygen plasma, water plasma, ozone (O 3 ), NO, N 2 O, NO 2 , carbon monoxide (CO), carbon dioxide (CO 2 ), CO 2 plasma, and combinations thereof.

5. A method of forming a silicon nitride or a silicon carbonitride film via an atomic layer deposition or plasma enhanced atomic layer deposition process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane having Formula A, B, and C or mixtures thereof is employed as at least one of the silicon containing precursors:

wherein R is independently selected from a C 1 to C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group in formula C with or without substituents; R 1 is independently selected from a C 3 -C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a hydrogen atom; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group with substituents; and R 2 represents a single bond; a saturated or unsaturated, linear or branched, substituted or unsubstituted, hydrocarbon chain wherein the number of carbon atoms ranges from 1 to 10; a saturated or unsaturated, carbocyclic or heterocyclic ring; SiR 2 ; or SiH 2 , and wherein R and R 1 in Formula A are also combinable to form a cyclic group;

c. purging the reactor with a purge gas;

d. introducing a nitrogen-containing source into the reactor;

e. purging the reactor with a purge gas; and

The steps b through e are repeated until a desired thickness of the silicon nitride film is obtained wherein the organoaminosilane is one selected from the group consisting of 1-silyl-7-azaindole, N-silyl-2,5-dimethylpyrrole, N-(4-methoxyphenyl)disilazane, N-(3-methoxyphenyl)disilazane, N-(2-methoxyphenyl)disilazane, N-(4-chlorophenyl)disilazane, N-(2-chlorophenyl)disilazane, N-(2-ethylphenyl)disilazane, N-(2,6-diethylphenyl)disilazane, N-(2-propylphenyl)disilazane, N-(4-t-butylphenyl)disilazane, N-(4-iso-propylphenyl)disilazane, N-(2-iso-propylphenyl)disilazane, N-(3-ethylphenyl)disilazane, N-(4-sec-butylphenyl)disilazane, N-(4-vinylphenyl)disilazane, N-(3-methylphenyl)disilazane, N-(4-methylphenyl)disilazane, N-(2,4,6-trimethylphenyl)disilazane, N-(2,6-di-isopropylphenyl)disilazane, 1-N-(2-pyridyl)disilazane, N,N-disilyl-2-aminopyrimidine, N-(4-methyl-2-pyridyl)disilazane, N-(6-methyl-2-pyridyl)disilazane, N-(3-methyl-2-pyridyl)disilazane, N-(5-methyl-2-pyridyl)disilazane, and N-[2-(4-methylpyrimidino)amino]disilazane, N-(2-dimethylamino-1-methylethyl)disilazane, N-(2-dimethylaminoethyl)disilazane, N-(1-cyclohexylethyl)disilazane, N,N-disilylcumylamine, N-[3,3-dimethylbutyl-2]disilazane, N,N-disilyl-2-picolylamine, N,N-disilyl-2-(2-pyridyl)ethylamine, and N,N-disilyl-1-(4-methylphenyl)ethylamine, N-propyl-isopropylaminosilane, N-methylcyclohexylaminosilane, N-ethylcyclohexylaminosilane, allylphenylaminosilane, N-isopropylcyclohexylaminosilane, allylcyclopentylaminosilane, phenylcyclohexylaminosilane, and 2-(N-silylmethylamino)pyridine.

6. The method of claim 5 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, helium plasma, argon plasma, hydrogen plasma, and mixtures thereof.

7. A method of forming a silicon nitride film onto at least a surface of a substrate using a chemical vapor deposition or plasma enhanced chemical vapor deposition process comprising:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane having Formula A, B, and C or mixtures thereof is employed as at least one of the silicon containing precursors:

wherein R is independently selected from a C 1 to C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group in formula C with or without substituents; R 1 is independently selected from a C 3 -C 10 linear or branched alkyl group; a C 3 to C 10 cyclic alkyl group; a C 5 to C 10 aromatic group; a C 3 to C 10 saturated or unsaturated heterocyclic group; a hydrogen atom; a linear or a branched C 2 to C 10 alkenyl group; a C 1 to C 10 alkoxy group; a C 1 to C 10 alkylamino group; or a silyl group with substituents; and R 2 represents a single bond; a saturated or unsaturated, linear or branched, substituted or unsubstituted, hydrocarbon chain wherein the number of carbon atoms ranges from 1 to 10; a saturated or unsaturated, carbocyclic or heterocyclic ring; SiR 2 ; or SiH 2 , and wherein R and R 1 in Formula A are also combinable to form a cyclic group;

c. providing a nitrogen-containing source wherein the at least one organoaminosilane precursors and the nitrogen-containing source react to deposit the film comprising both silicon and nitrogen onto the at least one surface wherein the organoaminosilane is one selected from the group consisting of 1-silyl-7-azaindole, N-silyl-2,5-dimethylpyrrole, N-(4-methoxyphenyl)disilazane, N-(3-methoxyphenyl)disilazane, N-(2-methoxyphenyl)disilazane, N-(4-chlorophenyl)disilazane, N-(2-chlorophenyl)disilazane, N-(2-ethylphenyl)disilazane, N-(2,6-diethylphenyl)disilazane, N-(2-propylphenyl)disilazane, N-(4-t-butylphenyl)disilazane, N-(4-iso-propylphenyl)disilazane, N-(2-iso-propylphenyl)disilazane, N-(3-ethylphenyl)disilazane, N-(4-sec-butylphenyl)disilazane, N-(4-vinylphenyl)disilazane, N-(3-methylphenyl)disilazane, N-(4-methylphenyl)disilazane, N-(2,4,6-trimethylphenyl)disilazane, N-(2,6-di-isopropylphenyl)disilazane, 1-N-(2-pyridyl)disilazane, N,N-disilyl-2-aminopyrimidine, N-(4-methyl-2-pyridyl)disilazane, N-(6-methyl-2-pyridyl)disilazane, N-(3-methyl-2-pyridyl)disilazane, N-(5-methyl-2-pyridyl)disilazane, and N-[2-(4-methylpyrimidino)amino]disilazane, N-(2-dimethylamino-1-methylethyl)disilazane, N-(2-dimethylaminoethyl)disilazane, N-(1-cyclohexylethyl)disilazane, N,N-disilylcumylamine, N-[3,3-dimethylbutyl-2]disilazane, N,N-disilyl-2-picolylamine, N,N-disilyl-2-(2-pyridyl)ethylamine, and N,N-disilyl-1-(4-methylphenyl)ethylamine, N-propyl-isopropylaminosilane, N-methylcyclohexylaminosilane, N-ethylcyclohexylaminosilane, allylphenylaminosilane, N-isopropylcyclohexylaminosilane, allylcyclopentylaminosilane, phenylcyclohexylaminosilane, and 2-(N-silylmethylamino)pyridine.