Electronic device with controlled threshold voltage

1. A field effect transistor having a source, drain, and a gate, comprising:

a semiconductor substrate, a buried insulator layer positioned on the semiconductor substrate, and a semiconductor overlayer positioned on the buried insulator layer;

a low dopant channel region positioned below the gate and between the source and the drain, the low-dopant channel region being further positioned in an upper portion of the semiconductor overlayer; and

a plurality of doped regions having a predetermined dopant concentration profile, the plurality of doped regions including a screening region, with the screening region positioned in the semiconductor overlayer below the low dopant channel region, the screening region extending toward the buried insulator layer, the plurality of doped regions further including a threshold voltage set region positioned between the screening region and the low dopant channel, the screening region and the threshold voltage set region having each a peak dopant concentration, the threshold voltage region peak dopant concentration being between 1/50 and ½ of the peak dopant concentration of the screening region.

2. The field effect transistor of claim 1 , wherein buried insulator layer is a buried oxide layer.

3. The field effect transistor of claim 1 , wherein the peak dopant concentration of the screening region is at least 5×10 18 atoms/cm 3 .

4. The field effect transistor of claim 1 , wherein the screening region extends within 5 nm of the buried insulator layer.

5. The field effect transistor of claim 1 , wherein the threshold voltage set region extends within 30 nm of the buried insulator layer.

6. The field effect transistor of claim 1 , further including a bias tap coupled to the screening region, wherein the bias tap is configured to adjust a threshold voltage of the field effect transistor by application of a bias voltage.

7. The field effect transistor of claim 1 , wherein at least the semiconductor overlayer comprises silicon.

8. A field effect transistor having a source, a drain, and a gate, comprising:

a substrate including a semiconductor substrate, a buried insulator layer positioned on the semiconductor substrate, and a semiconductor overlayer positioned on the buried insulator layer;

a low dopant channel region positioned below the gate and between the source and the drain, the low-dopant channel region being further positioned in an upper portion of the semiconductor overlayer;

a screening region positioned in the semiconductor overlayer below the low dopant channel region and above the buried insulator layer; and

a threshold voltage set region positioned between the screening region and the low dopant channel,

wherein the screening region and the threshold voltage set region are formed by separate dopant implants so that the screening region and the threshold voltage are proximate to and distinct from one another.

9. The field effect transistor of claim 8 , wherein the screening region has a peak dopant concentration, the peak dopant concentration being above the buried insulator layer.

10. The field effect transistor of claim 9 , wherein the threshold voltage set region has a doping concentration between 1/50 to ½ of the peak dopant concentration.

11. The field effect transistor of claim 9 , wherein the peak dopant concentration is at least 1×10 19 atoms/cm 3 .

12. The field effect transistor of claim 8 , wherein the threshold voltage set region extends within 30 nm of the buried insulator layer.

13. The field effect transistor of claim 8 , further comprising a ground plane positioned below the buried insulator layer.

14. The field effect transistor of claim 8 , wherein the threshold voltage set region has less than 20 percent of the dopants in a predetermined dopant concentration profile.

15. The field effect transistor of claim 8 , further comprising a bias tap coupled to the screening region, the bias tap configured to adjust a threshold voltage of the field effect transistor by application of a bias voltage.